Two-Dimensional Ferromagnetic Materials for Spintronics: From Fundamental to Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 6 June 2025 | Viewed by 4073

Special Issue Editors


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Guest Editor
School of Physics and Information Technology, Shaanxi Normal University, Xi’an 710119, China
Interests: spin phenomena in two-dimensional molecular framework

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Guest Editor
School of Physics, Southeast University, Nanjing, China
Interests: battery; nanomaterials

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) ferromagnetic materials have garnered significant interest regarding their application in next-generation spintronic devices, e.g., spin valve, magnetic random-access memory, and giant magneto-resistance. Proposed by the Mermin−Wagner theorem, the presence of magneto-anisotropy can bridge the gap concerning low-energy modes and effectively suppress thermal fluctuations in the 2D regime, thus stabilizing long-range magnetic orders down to a single-layer limit. A variety of van der Waals (vdW) materials with intriguing magnetic properties, such as Fe3GeTe2, Cr2Ge2Te6, CrI3, and CrTe2, have been discovered in recent years. For instance, room-temperature ferromagnetism and strong perpendicular magnetic anisotropy (PMA) have been found in the 1T-CrTe2 film. However, 2D ferromagnetic materials often suffer from poor air stability and a degraded Curie temperature (Tc) with the thinning of thickness. On the other hand, by intercalating additional Cr atoms between CrTe2 layers, such as Cr1−xTe, CrTe, Cr2Te3, and Cr5Te8 films, nonlayered stoichiometric compounds not only exhibit good stability but also have a nontrivial magnetic structure and abundant transport properties. In particular, different intercalating Cr ordering in CrTe2 backbones and structural distortions can tune ferromagnetic coupling strengths, thus leading to phase-dependent long-range ferromagnetic order. Nevertheless, the development of robust and air-stable 2D ferromagnets that promote Tc above 310 K remains challenging.

This Special Issue, entitled “Two-dimensional Ferromagnetic Materials for Spintronics: From Fundamental to Applications”, aims to present a range of fundamental and applied research associated with two-dimensional (2D) ferromagnetic materials for spintronics application.

Prof. Dr. Minghu Pan
Prof. Dr. Qingyu Xu
Guest Editors

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Keywords

  • molecular beam epitaxial, the chemical vapor deposition (CVD) method
  • van der Waals heterostructure, 2D ferromagnetism, proximity coupling, magnetic anisotropy
  • transition metal dichalcogenides: Fe3GeTe2, Cr2Ge2Te6, CrI3, and CrTe2, etc.

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Published Papers (3 papers)

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Research

12 pages, 3346 KiB  
Article
Spin Glass State and Griffiths Phase in van der Waals Ferromagnetic Material Fe5GeTe2
by Jiaqi He, Yuan Cao, Yu Zou, Mengyuan Liu, Jia Wang, Wenliang Zhu and Minghu Pan
Nanomaterials 2025, 15(1), 19; https://doi.org/10.3390/nano15010019 - 27 Dec 2024
Viewed by 1127
Abstract
The discovery of two-dimensional (2D) van der Waals ferromagnetic materials opens up new avenues for making devices with high information storage density, ultra-fast response, high integration, and low power consumption. Fe5GeTe2 has attracted much attention because of its ferromagnetic transition [...] Read more.
The discovery of two-dimensional (2D) van der Waals ferromagnetic materials opens up new avenues for making devices with high information storage density, ultra-fast response, high integration, and low power consumption. Fe5GeTe2 has attracted much attention because of its ferromagnetic transition temperature near room temperature. However, the investigation of its phase transition is rare until now. Here, we have successfully synthesized a single crystal of the layered ferromagnet Fe5GeTe2 by chemical vapor phase transport, soon after characterized by X-ray diffraction (XRD), DC magnetization M(T), and isotherm magnetization M(H) measurements. A paramagnetic to ferromagnetic transition is observed at ≈302 K (TC) in the temperature dependence of the DC magnetic susceptibility of Fe5GeTe2. We found an unconventional potential spin glass state in the low-temperature regime that differs from the conventional spin glass states and Griffiths phase (GP) in the high-temperature regime. The physical mechanisms behind the potential spin glass state of Fe5GeTe2 at low temperatures and the Griffith phase at high temperatures need to be further investigated. Full article
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14 pages, 6170 KiB  
Article
Vortex Domain Wall Thermal Pinning and Depinning in a Constricted Magnetic Nanowire for Storage Memory Nanodevices
by Mohammed Al Bahri, Salim Al-Kamiyani and Al Maha Al Habsi
Nanomaterials 2024, 14(18), 1518; https://doi.org/10.3390/nano14181518 - 19 Sep 2024
Cited by 2 | Viewed by 1042
Abstract
In this study, we investigate the thermal pinning and depinning behaviors of vortex domain walls (VDWs) in constricted magnetic nanowires, with a focus on potential applications in storage memory nanodevices. Using micromagnetic simulations and spin transfer torque, we examine the impacts of device [...] Read more.
In this study, we investigate the thermal pinning and depinning behaviors of vortex domain walls (VDWs) in constricted magnetic nanowires, with a focus on potential applications in storage memory nanodevices. Using micromagnetic simulations and spin transfer torque, we examine the impacts of device temperature on VDW transformation into a transverse domain wall (TDW), mobility, and thermal strength pinning at the constricted area. We explore how thermal fluctuations influence the stability and mobility of domain walls within stepped nanowires. The thermal structural stability of VDWs and their pinning were investigated considering the effects of the stepped area depth (d) and its length (λ). Our findings indicate that the thermal stability of VDWs in magnetic stepped nanowires increases with decreasing the depth of the stepped area (d) and increasing nanowire thickness (th). For th ≥ 50 nm, the stability is maintained at temperatures ≥ 1200 K. In the stepped area, VDW thermal pinning strength increases with increasing d and decreasing λ. For values of d ≥ 100 nm, VDWs depin from the stepped area at temperatures ≥ 1000 K. Our results reveal that thermal effects significantly influence the pinning strength at constricted sites, impacting the overall performance and reliability of magnetic memory devices. These insights are crucial for optimizing the design and functionality of next-generation nanodevices. The stepped design offers numerous advantages, including simple fabrication using a single electron beam lithography exposure step on the resist. Additionally, adjusting λ and d allows for precise control over the pinning strength by modifying the dimensions of the stepped areas. Full article
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11 pages, 3939 KiB  
Article
Thermal Effects on Domain Wall Stability at Magnetic Stepped Nanowire for Nanodevices Storage
by Mohammed Al Bahri and Salim Al-Kamiyani
Nanomaterials 2024, 14(14), 1202; https://doi.org/10.3390/nano14141202 - 15 Jul 2024
Cited by 4 | Viewed by 1452
Abstract
In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control [...] Read more.
In the future, DW memory will replace conventional storage memories with high storage capacity and fast read/write speeds. The only failure in DW memory arises from DW thermal fluctuations at pinning sites. This work examines, through calculations, the parameters that might help control DW thermal stability at the pinning sites. It is proposed to design a new scheme using a stepped area of a certain depth (d) and length (λ). The study reveals that DW thermal stability is highly dependent on the geometry of the pinning area (d and λ), magnetic properties such as saturation magnetization (Ms) and magnetic anisotropy energy (Ku), and the dimensions of the nanowires. For certain values of d and λ, DWs remain stable at temperatures over 500 K, which is beneficial for memory applications. Higher DW thermal stability is also achieved by decreasing nanowire thickness to less than 10 nm, making DW memories stable below 800 K. Finally, our results help to construct DW memory nanodevices with nanodimensions less than a 40 nm width and less than a 10 nm thickness with high DW thermal stability. Full article
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