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Nanomaterials
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Applications of 2D Materials in Nanoelectronics
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Applications of 2D Materials in Nanoelectronics

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 15 August 2025 | Viewed by 1488

Special Issue Editors

Dr. Teng Zhang

E-Mail Website
Guest Editor
School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China
Interests: electronics
Dr. Cesare Grazioli

E-Mail Website
Guest Editor
CNR IOM, Consiglio Nazionale delle Ricerche - Istituto Officina dei Materiali, Area Science Park, Strada Statale 14 km 163,5, 34149 Basovizza, Trieste, Italy
Interests: photoionization; spectroscopy; X ray absorption near edge structure; X ray absorption; absorption spectroscopy; photoelectrons; photoemission; photoemission spectroscopy ionization potentials; free electron lasers; synchrotron; femtosecond; phthalocyanine
Dr. Ambra Guarnaccio

E-Mail Website
Guest Editor
Istituto Di Struttura Della Materia, Montellibreti, Italy
Interests: polymers

Special Issue Information

Dear Colleagues,

This Special Issue will explore potential cutting-edge applications for two-dimensional materials, such as graphene, transition metal dichalcogenides (TMDs), and hexagonal boron nitride (h-BN), in revolutionizing the field of nanoelectronics. These materials, characterized by their exceptional electrical, thermal, and mechanical properties, offer significant advantages over traditional bulk materials, enabling the development of ultra-thin, flexible, and high-performance electronic devices.

This project aims to investigate and demonstrate the practical applications of 2D materials in various nanoelectronics, including transistors, sensors, and flexible circuits. For this Special Issue, we invite submissions of papers reporting various applications of two-dimensional materials in nanoelectronics. We welcome original research and review articles on the fundamentals and fabrication of 2D materials applied to nanoscale electronics.

Dr. Teng Zhang
Dr. Cesare Grazioli
Dr. Ambra Guarnaccio
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanoelectronics
  • 2D materials
  • applications

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

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Research

11 pages, 2231 KiB  
Article
Investigating Floating-Gate Topology Influence on van der Waals Memory Performance
by Hao Zheng, Yusang Qin, Caifang Gao, Junyi Fang, Yifeng Zou, Mengjiao Li and Jianhua Zhang
Nanomaterials 2025, 15(9), 666; https://doi.org/10.3390/nano15090666 (registering DOI) - 27 Apr 2025
Viewed by 117
Abstract
As a critical storage technology, the material selection and structural design of flash memory devices are pivotal to their storage density and operational characteristics. Although van der Waals materials can potentially take over the scaling roadmap of silicon-based technologies, the scaling mechanisms and [...] Read more.
As a critical storage technology, the material selection and structural design of flash memory devices are pivotal to their storage density and operational characteristics. Although van der Waals materials can potentially take over the scaling roadmap of silicon-based technologies, the scaling mechanisms and optimization principles at low-dimensional scales remain to be systematically unveiled. In this study, we experimentally demonstrated that the floating-gate length can significantly affect the memory window characteristics of memory devices. Experiments involving various floating-gate and tunneling-layer configurations, combined with TCAD simulations, were conducted to reveal the electrostatic coupling behaviors between floating gate and source/drain electrodes during shaping of the charge storage capabilities. Fundamental performance characteristics of the designed memory devices, including a large memory ratio (82.25%), good retention (>50,000 s, 8 states), and considerable endurance characteristics (>2000 cycles), further validate the role of floating-gate topological structures in manipulating low-dimensional memory devices, offering valuable insights to drive the development of next-generation memory technologies. Full article
(This article belongs to the Special Issue Applications of 2D Materials in Nanoelectronics)
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15 pages, 37842 KiB  
Article
First-Principles Calculations, Machine Learning and Monte Carlo Simulations of the Magnetic Coercivity of FexCo1−x Bulks and Nanoclusters
by Dou Du, Youwei Zhang, Xingwu Li and Namin Xiao
Nanomaterials 2025, 15(8), 577; https://doi.org/10.3390/nano15080577 - 10 Apr 2025
Viewed by 358
Abstract
FeCo alloys, renowned for their exceptional magnetic properties, such as high saturation magnetization and elevated Curie temperatures, hold significant potential for various technological applications. This study combines density-functional theory (DFT) and Monte Carlo (MC) simulations to investigate the magnetic properties of FeCo alloys [...] Read more.
FeCo alloys, renowned for their exceptional magnetic properties, such as high saturation magnetization and elevated Curie temperatures, hold significant potential for various technological applications. This study combines density-functional theory (DFT) and Monte Carlo (MC) simulations to investigate the magnetic properties of FeCo alloys and nanoclusters. DFT-derived exchange coupling constants (Jij) and magnetic anisotropy (Ki) along with machine learning (ML) predicted spin vectors (Si) serve as inputs for the Monte Carlo framework, enabling a detailed exploration of magnetic coercivity (Hc) across different compositions and temperatures. The simulations reveal an optimal Fe concentration, particularly around Fe0.65Co0.35, where magnetic coercivity reaches its peak, aligning with experimental trends. A similar simulation procedure was conducted for a Fe58Co32 nanocluster at 300 K and 500 K, demonstrating magnetic behavior comparable to bulk materials. This integrative computational approach provides a powerful tool for simulating and understanding the magnetic properties of alloys and nanomaterials, thus aiding in the design of advanced magnetic materials. Full article
(This article belongs to the Special Issue Applications of 2D Materials in Nanoelectronics)
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10 pages, 2103 KiB  
Article
From Chains to Arrays: Substrate-Mediated Self-Assembly of Diboron Molecules
by Xiaoyu Hao, Huixia Yang, Mengmeng Niu, Tingting Wang, Hongyan Ji, Iulia Emilia Brumboiu, Cesare Grazioli, Ambra Guarnaccio, Albano Cossaro, Yan Li, Jingsi Qiao, Quanzhen Zhang, Liwei Liu, Teng Zhang and Yeliang Wang
Nanomaterials 2024, 14(23), 1952; https://doi.org/10.3390/nano14231952 - 5 Dec 2024
Cited by 1 | Viewed by 747
Abstract
In this study, we explore the substrate-mediated control of self-assembly behavior in diboron molecules (C12H8B2O4, B2Cat2) using scanning tunneling microscopy (STM). The structural transformation of B2Cat2 molecules from [...] Read more.
In this study, we explore the substrate-mediated control of self-assembly behavior in diboron molecules (C12H8B2O4, B2Cat2) using scanning tunneling microscopy (STM). The structural transformation of B2Cat2 molecules from one-dimensional (1D) molecular chains to two-dimensional (2D) molecular arrays was achieved by changing the substrate from Au(111) to bilayer graphene (BLG), highlighting the key role of substrate interactions in determining the assembly structure. Notably, the B-B bond in the molecular arrays on BLG is distinctly pronounced, reflecting a more refined molecular resolution with distinct electronic states than that on Au(111). Density functional theory (DFT) calculations confirm the weak interaction between B2Cat2 molecules and the BLG substrate, which facilitates the formation of 2D molecular arrays on BLG. This work demonstrates how controlling substrate properties enables the formation of 1D chains and 2D arrays, providing valuable insights for the design of next-generation molecular electronics and catalysis systems. Full article
(This article belongs to the Special Issue Applications of 2D Materials in Nanoelectronics)
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