Special Issue "Ga2O3-Based Nanomaterials"
A special issue of Nanomaterials (ISSN 2079-4991).
Deadline for manuscript submissions: closed (30 April 2021).
Interests: nanomaterials; thin film transistors; memory devices, ferroelectric devices; nanostructures; semiconductor doping; metal oxides; nanofabrication; Semiconductor physics; dielectric materials; electrical properties; graphene oxide; graphene nanoribbons; photocatalysts; low-dimensional semiconductors
Special Issues and Collections in MDPI journals
Gallium oxide (Ga2O3), a transparent semiconductor oxide, is recently receiving more attention as an exciting wide bandgap and nearly direct bandgap semiconductor. Though monoclinic Ga2O3 has been the most widely investigated, different polymorphic forms including rhombohedral, defective spinel, cubic, and orthorhombic structures have also been studied. This provides more opportunities for power electronics, optoelectronics, high-speed electronics, photoelectrochemistry, photocatalysis, and gas/photon sensors.
Ga2O3-based nanomaterials could expedite the integration of Ga2O3 into future electronics, sensors, and optoelectronics, because nano-scaled Ga2O3 offers unique electrical, optical, thermal, magnetic, and chemical properties. To take full advantage of these nanomaterials, further research is necessary on their preparation, integration, characterization, performance, and safety.
In this Special Issue on Ga2O3-based nanomaterials, we expect contributions from a broad community of scientists and engineers working on Ga2O3-based nanomaterials for various applications, including electronics, photonics, and catalysts. We also anticipate manuscripts dealing with the new understanding and characterization methods in this wide bandgap semiconductor.
Dr. Wan Sik Hwang
Manuscript Submission Information
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- Ga2O3 nanowires and nanorods
- Power electronics
- Nanowire and nanorods devices