Special Issue "Ga2O3-Based Nanomaterials"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 30 April 2021.

Special Issue Editor

Dr. Wan Sik Hwang
Website
Guest Editor
Department of Materials Engineering, Korea Aerospace University, Goyang, South Korea
Interests: nanomaterials; thin film transistors; memory devices, ferroelectric devices; nanostructures; semiconductor doping; metal oxides; nanofabrication; Semiconductor physics; dielectric materials; electrical properties; graphene oxide; graphene nanoribbons; photocatalysts; low-dimensional semiconductors
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Special Issue Information

Dear Colleagues,

Gallium oxide (Ga2O3), a transparent semiconductor oxide, is recently receiving more attention as an exciting wide bandgap and nearly direct bandgap semiconductor. Though monoclinic Ga2O3 has been the most widely investigated, different polymorphic forms including rhombohedral, defective spinel, cubic, and orthorhombic structures have also been studied. This provides more opportunities for power electronics, optoelectronics, high-speed electronics, photoelectrochemistry, photocatalysis, and gas/photon sensors.

Ga2O3-based nanomaterials could expedite the integration of Ga2O3 into future electronics, sensors, and optoelectronics, because nano-scaled Ga2O3 offers unique electrical, optical, thermal, magnetic, and chemical properties. To take full advantage of these nanomaterials, further research is necessary on their preparation, integration, characterization, performance, and safety.

In this Special Issue on Ga2O3-based nanomaterials, we expect contributions from a broad community of scientists and engineers working on Ga2O3-based nanomaterials for various applications, including electronics, photonics, and catalysts. We also anticipate manuscripts dealing with the new understanding and characterization methods in this wide bandgap semiconductor.

Dr. Wan Sik Hwang
Guest Editor

Manuscript Submission Information

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Keywords

  • Ga2O3 nanowires and nanorods
  • Power electronics
  • Photocatalysts
  • Nanowire and nanorods devices
  • Synthesis

Published Papers (1 paper)

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Research

Open AccessArticle
Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition
Nanomaterials 2020, 10(6), 1031; https://doi.org/10.3390/nano10061031 - 28 May 2020
Abstract
In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of [...] Read more.
In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong (201) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented. Full article
(This article belongs to the Special Issue Ga2O3-Based Nanomaterials)
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