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Nanomaterials
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept...
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Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Solar Energy and Solar Cells".

Deadline for manuscript submissions: 8 August 2025 | Viewed by 3235

Special Issue Editors

Dr. Shuhong Xu

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
Interests: optoelectronic functional materials and devices
Dr. Yi Zhang

E-Mail Website
Guest Editor
College of Renewable Energy, Hohai University, Nanjing, China
Interests: thermalization mechanism; ultrafast carrier dynamics; hot carrier solar cells; III-V quantum well structure; thermal photovoltaic solar cells; III-V bulk semiconductors; perovskite photovoltaic materials
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The development of fundamental theories, such as solid-state physics, quantum mechanics and energy band theory, not only accelerates the development of semiconductor physics, but also makes semiconductor device manufacturing gradually develop into energy band engineering-based device manufacturing. Compared with the traditional silicon-based semiconductors, the III-V group compound semiconductors represented by GaAs, GaP and InP possess the features of high band-gap width, electron mobility and electron saturation rate, making them more applicable for high-speed, high-frequency and high-power optoelectronic devices under high temperature and intense irradiance conditions. Moreover, the low-dimensional limited structure materials consisting of II-VI group semiconductors like CdS, CdTe and CdSe further diversify the material systems for optoelectronic devices. Meanwhile, halide perovskite has experienced rapid development in both fundamental research and applications in different devices. These devices are widely used in photovoltaic solar cells, power electronic devices, lasers, chemical and biological detection and semiconductor lighting, inducing a series of scientific problems in the interdisciplinary field of physics, optics, material science, optoelectronics, and so on. This Special Issue aims to collect the latest research progress of such semiconductors in the field of solar cell, solid-state physics, optics and optoelectronics, and to explore the basic scientific theories and practical technical applications.

Dr. Shuhong Xu
Dr. Yi Zhang
Guest Editors

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

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Keywords

  • II-VI semiconductors
  • III-V semiconductors
  • halide perovskite
  • solid-state physics
  • optics
  • optoelectronics
  • laser
  • detector
  • photovoltaic solar cell
  • ultrafast carrier dynamics

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Published Papers (3 papers)

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Research

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8 pages, 1717 KiB  
Article
Analyzing Efficiency of Perovskite Solar Cells Under High Illumination Intensities by SCAPS Device Simulation
by Heng Li, Yongtao Huang, Muyan Zhu, Pingyuan Yan and Chuanxiang Sheng
Nanomaterials 2025, 15(4), 286; https://doi.org/10.3390/nano15040286 - 13 Feb 2025
Viewed by 737
Abstract
The perovskite solar cell (PSC) is undergoing intense study to meet sustainable energy and environmental demands. However, large-sized solar cells will degrade the power conversion efficiency, thus concentrating light on small-size devices would be a solution. Here, we report the performance of a [...] Read more.
The perovskite solar cell (PSC) is undergoing intense study to meet sustainable energy and environmental demands. However, large-sized solar cells will degrade the power conversion efficiency, thus concentrating light on small-size devices would be a solution. Here, we report the performance of a p–i–n structured device using CH3NH3PbI3 (MAPbI3) as the active layer with an area of 6 mm2. We prove that the power output would be up to 4.2 mW under 10 Suns compared to the 0.9 mW obtained under 1 Sun; however, this results in an actual efficiency drop of the PSC. Further, using a SCAPS device simulation, we found that the intrinsic properties, such as mobility and defect density, of MAPbI3 has no profound influence on the relationship between light intensity and power conversion efficiency (PCE), but the series resistance is the dominant limiting factor on the performance of the PSC under high illumination intensities. Our work suggests the potential of perovskite in concentrating photovoltaics and makes recommendations for future development. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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8 pages, 4545 KiB  
Article
Study of Thermalization Mechanisms of Hot Carriers in BABr-Added MAPbBr3 for the Top Layer of Four-Junction Solar Cells
by Yi Zhang, Huilong Chen, Junfeng Qu, Jiayu Zhang and Gavin Conibeer
Nanomaterials 2024, 14(24), 2041; https://doi.org/10.3390/nano14242041 - 19 Dec 2024
Viewed by 894
Abstract
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Q [...] Read more.
The hot carrier multi-junction solar cell (HCMJC) is an advanced-concept solar cell with a theoretical efficiency greater than 65%. It combines the advantages of hot carrier solar cells and multi-junction solar cells with higher power conversion efficiency (PCE). The thermalization coefficient (Qth) has been shown to slow down by an order of magnitude in low-dimensional structures, which will significantly improve PCE. However, there have been no studies calculating the Qth of MAPbBr3 quantum dots so far. In this work, the Qth values of MAPbBr3 quantum dots and after BABr addition were calculated based on power-dependent steady-state photoluminescence (PD-SSPL). Their peak positions in PD-SSPL increased from 2.37 to 2.71 eV after adding BABr. The fitting shows that, after adding BABr, the Qth decreased from 2.64 ± 0.29 mW·K−1·cm−2 to 2.36 ± 0.25 mW·K−1·cm−2, indicating a lower relaxation rate. This is because BABr passivates surface defects, slowing down the carrier thermalization process. This work lays the foundation for the theoretical framework combining perovskite materials, which suggests that the appropriate passivation of BABr has the potential to further reduce Qth and make MAPbBr3 QDs with BABr modified more suitable as the top absorption layer of HCMJCs. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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Review

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27 pages, 6383 KiB  
Review
A Review of Measurement and Characterization of Film Layers of Perovskite Solar Cells by Spectroscopic Ellipsometry
by Liyuan Ma, Xipeng Xu, Changcai Cui, Tukun Li, Shan Lou, Paul J. Scott, Xiangqian Jiang and Wenhan Zeng
Nanomaterials 2025, 15(4), 282; https://doi.org/10.3390/nano15040282 - 13 Feb 2025
Viewed by 1211
Abstract
This article aims to complete a review of current literature describing the measurement and characterization of photoelectric and geometric properties of perovskite solar cell (PSC) film layer materials using the spectroscopic ellipsometry (SE) measurement technique. Firstly, the influence of film quality on the [...] Read more.
This article aims to complete a review of current literature describing the measurement and characterization of photoelectric and geometric properties of perovskite solar cell (PSC) film layer materials using the spectroscopic ellipsometry (SE) measurement technique. Firstly, the influence of film quality on the performance of PSCs is combed and analyzed. Secondly, SE measurement technology is systematically introduced, including the measurement principle and data analysis. Thirdly, a detailed summary is provided regarding the characterization of the geometric and optoelectronic properties of the substrate, electron transport layer (ETL), perovskite layer, hole transport layer (HTL), and metal electrode layer using SE. The oscillator models commonly used in fitting film layer materials in PSCs are comprehensively summarized. Fourthly, the application of SE combined with various measurement techniques to assess the properties of film layer materials in PSCs is presented. Finally, the noteworthy direction of SE measurement technology in the development of PSCs is discussed. The review serves as a valuable reference for further enhancing the application of SE in PSCs, ultimately contributing to the commercialization of PSCs. Full article
(This article belongs to the Special Issue Optoelectronic Properties of Nanomaterials and Their Applications in Advanced Concept Solar Cells)
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