Two-Dimensional Nanomaterials for High-Performance Transistors and Photodetectors

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: 31 January 2026 | Viewed by 1

Special Issue Editor


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Guest Editor
Zhejiang Technology Innovation Center of CMOS IC Manufacturing Process and Design, College of Integrated Circuits, Zhejiang University, Hangzhou 311200, China
Interests: integrated circuit manufacturing; embedded flash memory devices; novel two-dimensional electronic devices; two-dimensional nanomaterials

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) nanomaterials have shown great potential for high-performance electronic and optoelectronic applications. Due to their atomic-scale thickness, high mobility, and absence of surface dangling bonds, 2D nanomaterials have unique advantages in suppressing the short-channel effect and producing high-performance transistors. Similarly, because of their diverse bandgaps, strong light–matter interactions, and capability for flexible assembly in heterostructures with proper band alignment, 2D nanomaterials present fascinating advantages in realizing broadband and high-sensitivity photodetectors.

This Special Issue aims to present an overview of recent innovations and advancements in 2D nanomaterials for high-performance transistors and photodetectors. Its scope includes novel materials, doping and defect engineering, integration strategies, contact optimization, and performance improvements in 2D electronic and optoelectronic devices. We are particularly interested in novel device architectures, mechanisms, and process integrations for wafer-scale fabrication. We also welcome studies on flexible, transparent, and low-power transistors and photodetectors for wearable devices.

For this Special Issue, we welcome original research articles and reviews in research areas including (but not limited to) the following: scalable synthesis; heterostructure growth of 2D materials; doping, alloying and defect engineering; band structure, interface, and contact optimization for low-resistance, high-mobility transport; device integration for advanced transistors, broadband, and high-sensitivity photodetectors; wafer-scale, flexible, or transparent fabrication routes; as well as theoretical modeling, reliability assessment, and emerging applications from neuromorphic computing to IoT. We invite submissions that highlight experimental findings, theoretical developments, or new application paradigms enabled by cutting-edge 2D materials. Contributions from academia, national laboratories, and industry are all encouraged. Through this Special Issue, we aim to capture key advances in this evolving field and foster interdisciplinary collaboration across materials science, nanotechnology, and electronic engineering.

We look forward to receiving your contributions.

Prof. Dr. Dianyu Qi
Guest Editor

Manuscript Submission Information

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Keywords

  • electronic and optoelectronic devices
  • 2D materials
  • transistors
  • photosensors
  • photodetectors

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Published Papers

This special issue is now open for submission.
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