Applications of Nanomaterials in Light Emitting Diodes

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (20 February 2024) | Viewed by 575

Special Issue Editors

Dr. Xiaoli Zhang
E-Mail Website
Guest Editor
School of Physics and Opto-Electronic Engineering, Guangdong University of Technology, Guangzhou 510006, China
Interests: quantum dots; LEDs; perovskites; low-dimensional optical materials; optoelectronic devices
Dr. Weigao Wang
E-Mail Website
Guest Editor
College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Interests: quantum dots; LEDs; perovskites

Special Issue Information

Dear Colleagues,

Light-emitting diodes (LEDs) have emerged as a highly promising technology for lighting, displays, and optoelectronic devices. The integration of nanomaterials into LEDs has significantly advanced the field, offering enhanced performance, improved efficiency, and new functionalities.

This Special Issue aims to cover various topics related to the application of nanomaterials in LEDs. We invite original research articles, short communications, and systematic reviews for this Special Issue. The scope includes, but is not limited to:

  • The synthesis and characterization of nanomaterials tailored for LED applications, such as quantum dots, nanowires, and perovskites;
  • The fabrication and optimization of LED devices via the incorporation of nanomaterials into device architectures.

By encompassing a broad spectrum of topics, this Special Issue aims to provide valuable insights into the advancements and challenges in the field of nanomaterial-integrated LEDs. We encourage researchers in the field to contribute pioneering work, contributing to our collective understanding and future development.

Dr. Xiaoli Zhang
Dr. Weigao Wang
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2900 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum dots
  • perovskites
  • nanowires
  • mini-LED
  • micro-LED
  • LED applications
  • photoluminescent LEDs
  • electroluminescent LEDs

Published Papers (1 paper)

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Research

11 pages, 3740 KiB  
Article
Improvement of Near-Infrared Light-Emitting Diodes’ Optical Efficiency Using a Broadband Distributed Bragg Reflector with an AlAs Buffer
Nanomaterials 2024, 14(4), 349; https://doi.org/10.3390/nano14040349 - 12 Feb 2024
Viewed by 406
Abstract
This study developed an advanced 850 nm centered distributed Bragg reflector (DBR) (broadband DBR) composed of nanomaterial-based multiple structures to improve the optical efficiency of an 850 nm near-infrared light-emitting diode (NIR-LED). A combined 850 nm centered broadband DBR was fabricated by growing [...] Read more.
This study developed an advanced 850 nm centered distributed Bragg reflector (DBR) (broadband DBR) composed of nanomaterial-based multiple structures to improve the optical efficiency of an 850 nm near-infrared light-emitting diode (NIR-LED). A combined 850 nm centered broadband DBR was fabricated by growing an 800 nm centered ten-pair DBR on a 900 nm centered ten-pair DBR (denoted as a combined DBR). The combined DBR exhibited a slightly wider peak band than conventional DBRs. Furthermore, the peak band width of the combined DBR significantly increased upon using a reflective AlAs buffer layer that reduced the overlapped reflection. The output power (20.5 mW) of NIR-LED chips using the combined DBR with an AlAs buffer layer exceeded that of a conventional 850 nm centered DBR (14.5 mW) by more than 40%. Results indicated that combining the optical conditions of wavelengths and the AlAs buffer layer effectively strengthened the broadband effect of the DBR and increased the optical efficiency of the 850 nm NIR-LED. Full article
(This article belongs to the Special Issue Applications of Nanomaterials in Light Emitting Diodes)
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