Emerging Trends in Nanostructured Oxide Semiconductors: Synthesis, Characterization, and Applications
A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".
Deadline for manuscript submissions: 30 September 2025 | Viewed by 58
Special Issue Editor
Interests: oxide semiconductors; photodetectors; gas sensors; machine learning
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Nanostructured oxide semiconductor materials continue to attract significant interest, thanks to their precisely engineered nanoscale architectures and the remarkable electronic, optical, and catalytic properties they exhibit. These unique features have spurred diverse applications, ranging from high-performance sensors and photodetectors to energy storage devices and catalytic systems. Nonetheless, controlling the size, shape, and spatial distribution of oxide semiconductor nanostructures remains a considerable challenge, as does understanding how defects, impurities, and surface states affect overall device performance.
In parallel, the rising wave of artificial intelligence (AI) and machine learning (ML) offers a transformative opportunity within the field. Emerging data-driven approaches can streamline the discovery and design of next-generation oxide semiconductors, guide defect engineering, and optimize nanostructured parameters for specific applications. Such synergy not only accelerates research productivity but also broadens the scope of functional devices—ranging from neuromorphic and flexible electronics to chemical and biological sensors that employ AI-powered analysis.
This Special Issue seeks to create a vibrant forum for sharing novel research on the synthesis, characterization, and application of nanostructured oxide semiconductors, including, but not limited to, the following:
- Innovative fabrication methods for controlling structural and compositional homogeneity;
- Advanced characterization techniques to elucidate the roles of defects, impurities, and interfaces;
- Integration strategies for electronics, optoelectronics, and catalytic systems;
- Data-driven approaches (AI/ML) that enable predictive modeling and advanced analysis;
- Cutting-edge applications such as wearable/implantable devices, neuromorphic computing, multi-spectral sensing, and beyond.
By bringing together state-of-the-art research across these areas, this Special Issue aims to showcase how a deeper understanding of materials at the nanoscale—combined with AI-informed experimentation and analysis—will drive future innovations in oxide semiconductor technology.
We look forward to your contributions and to engaging in discussions that push the frontiers of this exciting field.
Dr. Chun-Ying Huang
Guest Editor
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Keywords
- oxide semiconductors
- structure
- morphology
- defects
- synthesis methods
- applications
- photodetectors
- LEDs
- solar cells
- gas sensors
- machine learning
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