Innovative Nanostructured Semiconductors for Electronic Devices

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (25 March 2024) | Viewed by 884

Special Issue Editors


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Engineering Department, Università degli Studi Niccolò Cusano, via don Carlo Gnocchi 3, 00166 Rome, Italy
Interests: laser treatments; charge mobility; high-temperature mixed conductivity; photovoltaic; nanosensors
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Guest Editor
Engineering Department, Università degli Studi Niccolò Cusano, via don Carlo Gnocchi 3, 00166 Rome, Italy
Interests: design, fabrication and characterization of diamond detectors for UV, X-rays or protons; design, fabrication and realization of front-end and read-out electronics; characterization of diamond detectors with laser-formed graphite buried contacts
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor materials represent a milestone, and have served as a foundation from which electronic devices have evolved in recent decades. The microelectronic industry is based on the silicon element, with Moore’s Law ended up almost two decades ago and technology scaling approaching its inner physical limits (3 to 2 nm next resolution upgrade). Therefore, electronic device research is strongly oriented toward the realization of innovative transistors based on 2D materials for power efficiency and flexibility or toward energy and sensing applications.

The demand for more power-efficient and flexible transistors has pushed forward research on excitonic and valleytronic transistors based on 2D materials, such as graphene and transition-metal dichalcogenides (TMDs). These materials cointegrated with CMOS technology would widen the design possibilities at the level of the single logical block, while the search for higher energy conversion efficiencies has driven an incredible scientific effort to create a new class of materials, such as hybrid perovskites, whose superior performances in charge collection is also pushing photodetector research to new frontiers. The other major challenge of semiconductor-based device research is the ability to find ecological pathways for their synthesis and subsequent functionalization at large scale and low cost, in order to create a “real green economy”.

The aim of this Special Issue is to provide a unique international platform for scientists to publish their latest advancements on the following main topics:

  • Novel forms of semiconducting materials such as nanoparticles, nanosheets, nanorods, quantum dots for energy, and sensing applications;
  • Three-dimensional surface and bulk restructuring/modification of semiconductive materials for the control of light-trapping and surface transport properties;
  • Physical, chemical, and optical characterization of semiconductive nanomaterials and exploitation of their outstanding features for device fabrication and integration in complex systems;
  • Novel procedures for the synthesis of semiconductor nanomaterials that are low-toxicity and low-cost procedures.

Dr. Andrea Orsini
Dr. Stefano Salvatori
Guest Editors

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Keywords

  • nanosheets
  • nanowires
  • nanosensors
  • quantum dots
  • LIPSS
  • charge mobility

Published Papers (1 paper)

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Research

12 pages, 4248 KiB  
Article
Wide Response Range Photoelectrochemical UV Detector Based on Anodized TiO2-Nanotubes@Ti@quartz Structure
by Youqing Wang, Miaomiao Zhang, Wenxuan Wu, Ze Wang, Minghui Liu, Tiantian Yang and Renqianzhuoma
Nanomaterials 2024, 14(5), 439; https://doi.org/10.3390/nano14050439 - 28 Feb 2024
Viewed by 736
Abstract
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of electrodes on light absorption. We obtained [...] Read more.
Conventional sandwich structure photoelectrochemical UV detectors cannot detect UV light below 300 nm due to UV filtering problems. In this work, we propose to place the electron collector inside the active material, thus avoiding the effect of electrodes on light absorption. We obtained a TiO2-nanotubes@Ti@quartz photoanode structure by precise treatment of a commercial Ti mesh by anodic oxidation. The structure can absorb any light in the near-UV band and has superior stability to other metal electrodes. The final encapsulated photoelectrochemical UV detectors exhibit good switching characteristics with a response time below 100 ms. The mechanism of the oxidation conditions on the photovoltaic performance of the device was investigated by the electrochemical impedance method, and we obtained the optimal synthesis conditions. Response tests under continuous spectroscopy confirm that the response range of the device is extended from 300–400 nm to 240–400 nm. This idea of a built-in collector is an effective way to extend the response range of a photoelectrochemical detector. Full article
(This article belongs to the Special Issue Innovative Nanostructured Semiconductors for Electronic Devices)
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