Photonics and Optics in Low-Dimensional Materials: Fundamentals and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: closed (20 March 2025) | Viewed by 652

Special Issue Editors


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Guest Editor
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, China
Interests: two-dimensional materials and ptoelectronics devices

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Guest Editor
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
Interests: high-quality laser generation; structural optics generation and propagation; laser beam combine; nanomaterials
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Special Issue Information

Dear Colleagues,

Low-dimensional materials, represented especially by fullerenes, CNT, graphene, TMDs, black phosphorus, etc., with unique electrical, magnetic, optical, and mechanical properties, have attracted widespread scientific attention.

This Special Issue is dedicated to exploring novel research at the intersection of the preparation, property modulation, and application of low-dimensional materials, not limited to microelectronics, sensing, catalysis, or energy storage.

We encourage contributors to delve into the intricate synergy of the preparation and development of such devices, as well as the optimization of their functions, with a particular emphasis on showcasing advancements in the diverse array of devices and system applications that occur in practical scenarios.

Dr. Qiang Yu
Prof. Dr. Jian Wu
Guest Editors

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Keywords

  • low-dimensional materials
  • processing technology
  • optoelectronics
  • ferroelectric regulation
  • lasers

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Published Papers (1 paper)

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Research

10 pages, 2399 KiB  
Article
Enhanced Optoelectronic Response of TiO2 Photodetector Sensitized via CuInSe2 Quantum Dots
by Yanxu Zhang, Kexin Yu, Jin Zhao, Shuaiqi Xu, Mengqi Lv, Qiuling Zhao, Xue Du, Maorong Wang and Xia Wang
Nanomaterials 2025, 15(7), 522; https://doi.org/10.3390/nano15070522 - 30 Mar 2025
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Abstract
Colloidal copper-based chalcogenide quantum dots (QDs), particularly lead-free CuInSe2 systems, have emerged as promising photosensitizers for optoelectronic de-vices due to their high extinction coefficients and solution processability. In this work, we demonstrate a TiO2 photodetector enhanced through interfacial engineering with the [...] Read more.
Colloidal copper-based chalcogenide quantum dots (QDs), particularly lead-free CuInSe2 systems, have emerged as promising photosensitizers for optoelectronic de-vices due to their high extinction coefficients and solution processability. In this work, we demonstrate a TiO2 photodetector enhanced through interfacial engineering with the size of 9.88 ± 2.49 nm CuInSe2 QDs, synthesized via controlled thermal injection. The optimized device architecture combines a 160 nm TiO2 active layer with 60 μm horizontal channel electrodes, achieving high performance metrics. The QD-sensitized device demonstrates an impressive switching ratio of approximately 105 in the 405 nm wavelength, a significant 34-times increase in responsivity at a 2 V bias, and a detection rate of 4.17 × 108 Jones. Due to the limitations imposed by the TiO2 bandgap, the TiO2 photodetector exhibits a negligible increase in photocurrent at 565 nm. The engineered type-II heterostructure enables responsivity enhancement across an extended spectral range through sensitization while maintaining equivalent performance characteristics at both 405 nm and 565 nm wavelengths. Furthermore, the sensitized architecture demonstrates superior response kinetics, enhanced specific detectivity, and exceptional operational stability, establishing a universal design framework for broadband photodetection systems. Full article
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