Low Energy, Focused Beam Ion Implantation for Semiconducting Materials and Devices

Dear Colleagues,

Ion implantation is a key capability for the semiconductor industry. As devices shrink, novel materials enter the manufacturing line, and quantum technologies transition to being more mainstream, traditional implantation methods fall short in terms of energy, ion species, and positional precision. This is especially relevant for functionalization of 2D materials, as implanting into a single atomic layer with high spatial resolution combines multiple challenges in ion sources, optics, and material processing.

Precisely placing and incorporating a variety of ions and vacancies into 2D materials is a technological gap that needs to be addressed for IEEE predicted roadmap for mass utilization of 2D materials in the consumer electronics by the 2030s, technological space around 2D material-based sensors, and emerging interests in using 2D materials as single photon emitters for quantum applications. This Special Issue seeks to highlight recent advanced in ion implantation, ion optics, and theoretical simulations via research papers, and review articles that describe the most salient physics, methodologies, and outstanding issues in the ion beam community, for directly implanting ions into 2D materials.

We look forward to receiving your submissions!

Dr. Alex Belianinov
Guest Editor

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