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Micromachines
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Research Trends of RF Power Devices
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Research Trends of RF Power Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".

Deadline for manuscript submissions: 30 January 2026 | Viewed by 414

Special Issue Editors

Prof. Dr. Sheng-Lyang Jang

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Guest Editor
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
Interests: RF power devices
Special Issues, Collections and Topics in MDPI journals
Dr. Wen-Cheng Lai

E-Mail Website
Guest Editor
Department of Electrical Engineering, Ming Chi University of Technology, Taipei, Taiwan
Interests: RF; analog IC integrated design; computer and communications; artificial intelligence
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

We cordially invite you to submit papers to the Special Issue “Research Trends of RF Power Devices” in the journal Micromachines. 

As communications continue to advance, RF power semiconductors play a key role in meeting the performance needs of modern wireless networks and driving market growth. RF power devices are designed to convert DC power into RF power as efficiently as possible, minimizing power losses, minimizing heat generation, and improving reliability. RF power devices based on a silicon substrate have been on the market for over a decade. Gallium nitride (GaN) and silicon carbide (SiC) technologies are evolving rapidly due to their attractive properties, including a high bandgap, high mobility, and high-temperature operation; these are particularly attractive for emerging device concepts. The increasing market demand is driving device innovation. For RF circuit applications to efficiently amplify RF signals, co-integrated passive and active device components (e.g., inductors, transformers, capacitors) are crucial. This Special Issue will publish research papers and review articles that focus on recent trends in RF power devices. Topics include RF power semiconductor devices and their operational physics, RF circuits and their operating principles, and other issues related to reliability.

  • T1: RF/THz power devices based on Si-based technology, including FinFETs and nanosheets;
  • T2: Wide-bandgap (GaN, SiC, GaAs, etc.) semiconductor devices and their integrated circuits;
  • T3: Heterogeneous integration III-V/CMOS technologies;
  • T4: RF power devices and circuits for low-power sensor and IoT applications;
  • T5: Microwave- and millimeter-wave integrated passive components/active circuits;
  • T6: Advanced packaging for RF power devices and RF/THz integrated power chiplet design;
  • T7: Other related issues: integrated RF power devices with low-noise amplifiers or antennas,

Prof. Dr. Sheng-Lyang Jang
Dr. Wen-Cheng Lai
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • RF power device design and fabrication
  • RF power circuit design and characterization
  • heterogeneous integration of RF semiconductor devices
  • RF/THz power circuit
  • integrated power devices
  • passive components
  • sensors

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Published Papers (1 paper)

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21 pages, 11260 KiB  
Article
GaN HEMT Oscillators with Buffers
by Sheng-Lyang Jang, Ching-Yen Huang, Tzu Chin Yang and Chien-Tang Lu
Micromachines 2025, 16(8), 869; https://doi.org/10.3390/mi16080869 - 28 Jul 2025
Viewed by 307
Abstract
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability [...] Read more.
With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article
(This article belongs to the Special Issue Research Trends of RF Power Devices)
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