Research Trends of RF Power Devices
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".
Deadline for manuscript submissions: 30 January 2026 | Viewed by 43
Special Issue Editors
Interests: RF power devices
Special Issues, Collections and Topics in MDPI journals
Interests: RF; analog IC integrated design; computer and communications; artificial intelligence
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
We cordially invite you to submit papers to the Special Issue “Research Trends of RF Power Devices” in the journal Micromachines.
As communications continue to advance, RF power semiconductors play a key role in meeting the performance needs of modern wireless networks and driving market growth. RF power devices are designed to convert DC power into RF power as efficiently as possible, minimizing power losses, minimizing heat generation, and improving reliability. RF power devices based on a silicon substrate have been on the market for over a decade. Gallium nitride (GaN) and silicon carbide (SiC) technologies are evolving rapidly due to their attractive properties, including a high bandgap, high mobility, and high-temperature operation; these are particularly attractive for emerging device concepts. The increasing market demand is driving device innovation. For RF circuit applications to efficiently amplify RF signals, co-integrated passive and active device components (e.g., inductors, transformers, capacitors) are crucial. This Special Issue will publish research papers and review articles that focus on recent trends in RF power devices. Topics include RF power semiconductor devices and their operational physics, RF circuits and their operating principles, and other issues related to reliability.
- T1: RF/THz power devices based on Si-based technology, including FinFETs and nanosheets;
- T2: Wide-bandgap (GaN, SiC, GaAs, etc.) semiconductor devices and their integrated circuits;
- T3: Heterogeneous integration III-V/CMOS technologies;
- T4: RF power devices and circuits for low-power sensor and IoT applications;
- T5: Microwave- and millimeter-wave integrated passive components/active circuits;
- T6: Advanced packaging for RF power devices and RF/THz integrated power chiplet design;
- T7: Other related issues: integrated RF power devices with low-noise amplifiers or antennas,
Prof. Dr. Sheng-Lyang Jang
Dr. Wen-Cheng Lai
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- RF power device design and fabrication
- RF power circuit design and characterization
- heterogeneous integration of RF semiconductor devices
- RF/THz power circuit
- integrated power devices
- passive components
- sensors
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