Steep Switching Field Effect Transistor
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "E：Engineering and Technology".
Deadline for manuscript submissions: closed (1 October 2021) | Viewed by 5943
Special Issue Editors
Interests: tunneling transistors; semiconductor memory devices; 3D transistors
Interests: design, fabrication, measurement, characterization, and modeling of nanoscale CMOS/CMOS compatible devices; neuromorphic devices
Special Issue Information
Dear Colleagues,
The various steep-switching devices, including tunneling field-effect transistors (FETs), negative capacitance FETs, feedback FETs, and nano-electromechanical FETs, have been explored in efforts to reduce the dynamic power and to improve the operation speed. The devices can overcome the switching limit of the MOSFET with the different operating mechanisms and/or the improved gate-to-channel coupling. Despite the theoretical advantages, various technical issues still exist in each steep-switching FET, and innovative solutions are required. In this Special Issue, we focus on the development of steep-switching devices for various applications such as components of logic circuits or neuromorphic circuits, memory devices, and sensors. Articles, short communications, and review articles that cover a broad range of possible topics, including fabrication, modeling, characterization, and simulation, are all welcomed. All submissions will be reviewed in accordance with the conventional procedures of Micromachines.
Prof. Dr. Ilhwan Cho
Prof. Dr. Sangwan Kim
Prof. Dr. Garam Kim
Guest Editors
Manuscript Submission Information
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Keywords
- Tunneling field-effect transistor
- Feedback field-effect transistor
- Negative capacitance field-effect transistor
- Nano-electro-mechanical field-effect transistor
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