Special Issue "SiC Applications outside Power Electronic Devices"

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 April 2023 | Viewed by 2095

Special Issue Editors

Dr. Alberto Roncaglia
E-Mail Website
Guest Editor
IMM sezione di Bologna, National Research Council of Italy, Via Gobetti 101, 40129 Bologna, Italy
Interests: microfabrication; sensors; MEMS

Special Issue Information

Dear Colleagues,

Newly emerging semiconductors, such as silicon carbide (SiC), are attractive for advanced power devices, due to their superior physical properties. Owing to the remarkable improvement in SiC wafer quality and the progress in device technology, high-voltage SiC Schottky barrier diodes (SBDs) and field-effect transistors (FETs), which significantly outperform Si counterparts, have been demonstrated and, in recent years, the market of SiC power devices has increased considerably thanks to the application of electric vehicles.

In recent years, several interesting applications of this material in different fields (MEMS, optical devices, radiation detectors, biomedical devices, quantum devices, high temperature electronics, photovoltaic, water splitting) have been proposed thanks to the outstanding mechanical, optical, and radiation hardness, as well as biocompatibility properties of this material.

This Special Issue seeks to showcase research papers, short communications, and review articles that focus on these new applications outside the power electronics mainstream. The material and devices characterization, the design, the processing, and properties simulations for these new applications are all inside the scopes of this Special Issue. 

Prof. Dr. Francesco La Via
Dr. Alberto Roncaglia
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • silicon carbide
  • MEMS
  • optical devices
  • biomedical devices
  • radiation detectors
  • quantum devices
  • high-temperature electronics

Published Papers (2 papers)

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Research

Article
Radiation Hardness Study of Silicon Carbide Sensors under High-Temperature Proton Beam Irradiations
Micromachines 2023, 14(1), 166; https://doi.org/10.3390/mi14010166 - 09 Jan 2023
Viewed by 680
Abstract
Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore [...] Read more.
Silicon carbide (SiC), thanks to its material properties similar to diamond and its industrial maturity close to silicon, represents an ideal candidate for several harsh-environment sensing applications, where sensors must withstand high particle irradiation and/or high operational temperatures. In this study, to explore the radiation tolerance of SiC sensors to multiple damaging processes, both at room and high temperature, we used the Ion Microprobe Chamber installed at the Ruđer Bošković Institute (Zagreb, Croatia), which made it possible to expose small areas within the same device to different ion beams, thus evaluating and comparing effects within a single device. The sensors tested, developed jointly by STLab and SenSiC, are PIN diodes with ultrathin free-standing membranes, realized by means of a recently developed doping-selective electrochemical etching. In this work, we report on the changes of the charge transport properties, specifically in terms of the charge collection efficiency (CCE), with respect to multiple localized proton irradiations, performed at both room temperature (RT) and 500 °C. Full article
(This article belongs to the Special Issue SiC Applications outside Power Electronic Devices)
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Article
Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications
Micromachines 2022, 13(7), 1042; https://doi.org/10.3390/mi13071042 - 30 Jun 2022
Cited by 1 | Viewed by 785
Abstract
The aim of this work was a deep spectroscopical characterization of a thick 4H SiC epitaxial layer and a comparison of results between samples before and after a thermal oxidation process carried out at 1400 °C for 48 h. Through Raman and photoluminescence [...] Read more.
The aim of this work was a deep spectroscopical characterization of a thick 4H SiC epitaxial layer and a comparison of results between samples before and after a thermal oxidation process carried out at 1400 °C for 48 h. Through Raman and photoluminescence (PL) spectroscopies, the carrier lifetimes and the general status of the epilayer were evaluated. Time-resolved photoluminescence (TRPL) was used to estimate carrier lifetime over the entire 250 µm epilayer using different wavelengths to obtain information from different depths. Furthermore, an analysis of stacking fault defects was conducted through PL and Raman maps to evaluate how these defects could affect the carrier lifetime, in particular after the thermal oxidation process, in comparison with non-oxidated samples. This study shows that the oxidation process allows an improvement in the epitaxial layer performances in terms of carrier lifetime and diffusion length. These results were confirmed using deep level transient spectroscopy (DLTS) measurements evidencing a decrease in the Z1/2 centers, although the oxidation generated other types of defects, ON1 and ON2, which appeared to affect the carrier lifetime less than Z1/2 centers. Full article
(This article belongs to the Special Issue SiC Applications outside Power Electronic Devices)
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