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Micromachines
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Photonic and Optoelectronic Devices and Systems, Third Edition
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Photonic and Optoelectronic Devices and Systems, Third Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A：Physics".

Deadline for manuscript submissions: 20 September 2025 | Viewed by 2767

Special Issue Editor

Dr. Muhammad Ali Butt

E-Mail Website
Guest Editor
Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw, Poland
Interests: integrated photonics; plasmonics; fiber-optic sensors; metasurfaces; wearable sensors
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Photonics refers to the study and application of the physical science of light. Photonic devices are components for creating, manipulating, or detecting light. Examples include laser diodes, light-emitting diodes, switches, solar and photovoltaic cells, displays, and optical amplifiers. Moreover, optoelectronics is a rapidly developing technological discipline that involves the utilization of electronic devices to source, detect, and manipulate light. These devices can be a component of numerous applications, including military services, automatic access control systems, telecommunications, medical equipment, and more. Since this discipline is so wide, the spectrum of devices that come under optoelectronics is enormous, including image pick-up devices, LEDs and elements, information displays, optical storage, remote sensing systems, and optical communication systems. In this Special Issue, reviews and novel research papers on the topic are welcome, as are interdisciplinary works.

Dr. Muhammad Ali Butt
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optical waveguide devices
  • photonic sensors
  • photodiodes
  • solar cells
  • lasers
  • optical switches
  • logic gates
  • light-emitting diodes
  • plasmonics
  • metamaterials
  • photonic crystals

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Related Special Issue

Published Papers (3 papers)

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Research

14 pages, 2757 KiB  
Article
Highly Efficient Inverted Organic Light-Emitting Devices with Li-Doped MgZnO Nanoparticle Electron Injection Layer
by Hwan-Jin Yoo, Go-Eun Kim, Chan-Jun Park, Su-Been Lee, Seo-Young Kim and Dae-Gyu Moon
Micromachines 2025, 16(6), 617; https://doi.org/10.3390/mi16060617 - 24 May 2025
Viewed by 314
Abstract
Inverted organic light-emitting devices (OLEDs) have been attracting considerable attention due to their advantages such as high stability, low image sticking, and low operating stress in display applications. To address the charge imbalance that has been known as a critical issue of the [...] Read more.
Inverted organic light-emitting devices (OLEDs) have been attracting considerable attention due to their advantages such as high stability, low image sticking, and low operating stress in display applications. To address the charge imbalance that has been known as a critical issue of the inverted OLEDs, Li-doped MgZnO nanoparticles were synthesized as an electron-injection layer of the inverted OLEDs. Hexagonal wurtzite-structured Li-doped MgZnO nanoparticles were synthesized at room temperature via a solution precipitation method using LiCl, magnesium acetate tetrahydrate, zinc acetate dihydrate, and tetramethylammonium hydroxide pentahydrate. The Mg concentration was fixed at 10%, while the Li concentration was varied up to 15%. The average particle size decreased with Li doping, exhibiting the particle sizes of 3.6, 3.0, and 2.7 nm for the MgZnO, 10% and 15% Li-doped MgZnO nanoparticles, respectively. The band gap, conduction band minimum and valence band maximum energy levels, and the visible emission spectrum of the Li-doped MgZnO nanoparticles were investigated. The surface roughness and electrical conduction properties of the Li-doped MgZnO nanoparticle films were also analyzed. The inverted phosphorescent OLEDs with Li-doped MgZnO nanoparticles exhibited higher external quantum efficiency (EQE) due to better charge balance resulting from suppressed electron conduction, compared to the undoped MgZnO nanoparticle devices. The maximum EQE of 21.7% was achieved in the 15% Li-doped MgZnO nanoparticle devices. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Third Edition)
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14 pages, 3597 KiB  
Article
TCAD Simulation Study of Electrical Performance of a Novel High-Purity Germanium Drift Detector
by Mingyang Wang, Zheng Li, Bo Xiong and Yongguang Xiao
Micromachines 2025, 16(2), 229; https://doi.org/10.3390/mi16020229 - 17 Feb 2025
Cited by 1 | Viewed by 615
Abstract
High-purity germanium (HPGe) detectors occupy a prominent position in fields such as radiation detection and aerospace because of their excellent energy resolution and wide detection range. To achieve a broader detection range, conventional HPGe detectors often need to be expanded to cubic-centimeter-scale volumes. [...] Read more.
High-purity germanium (HPGe) detectors occupy a prominent position in fields such as radiation detection and aerospace because of their excellent energy resolution and wide detection range. To achieve a broader detection range, conventional HPGe detectors often need to be expanded to cubic-centimeter-scale volumes. However, this increase in volume leads to a large detector area, which in turn increases the detector capacitance, affecting the detector’s noise level and performance. To address this issue, this study proposes a novel high-purity germanium drift detector (HPGeDD). The design features a small-area central collecting cathode surrounded by concentric anode rings, with a resistive chain interposed between the anode rings to achieve self-dividing voltage. This design ensures that the detector’s capacitance is only related to the area of the central collecting cathode, independent of the overall active area, thus achieving a balance between a small capacitance and large active area. Electrical performance simulations of the novel detector were conducted using the semiconductor simulation software Sentaurus TCAD (P-2019.03). The results show a smooth electric potential distribution within the detector, forming a lateral electric field, as well as a lateral hole drift channel precisely directed toward the collecting cathode. Furthermore, simulations of heavy ion incidence were performed to investigate the detector’s carrier collection characteristics. The simulation results demonstrate that the HPGeDD exhibits advantages such as fast signal response and short collection time. The design proposal presented in this study offers a new solution to the problem of excessive capacitance in conventional HPGe detectors, expands their application scope, and provides theoretical guidance for subsequent improvements, optimizations, and practical manufacturing. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Third Edition)
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12 pages, 3102 KiB  
Article
Investigation of Modal Characteristics of Silicon Nitride Ridge Waveguides for Enhanced Refractive Index Sensing
by Muhammad A. Butt, Lukasz Kozlowski, Mateusz Słowikowski, Marcin Juchniewicz, Dagmara Drecka, Maciej Filipiak, Michał Golas, Bartłomiej Stonio, Michal Dudek and Ryszard Piramidowicz
Micromachines 2025, 16(2), 119; https://doi.org/10.3390/mi16020119 - 21 Jan 2025
Cited by 1 | Viewed by 1513
Abstract
This paper investigates the wavelength-dependent sensitivity of a ridge waveguide based on a silicon nitride (Si3N4) platform, combining numerical analysis and experimental validation. In the first part, the modal characteristics of a Si3N4 ridge waveguide are [...] Read more.
This paper investigates the wavelength-dependent sensitivity of a ridge waveguide based on a silicon nitride (Si3N4) platform, combining numerical analysis and experimental validation. In the first part, the modal characteristics of a Si3N4 ridge waveguide are analyzed in detail, focusing on the effective refractive index (neff), evanescent field ratio (EFR), and propagation losses (αprop). These parameters are critical for understanding the interplay of guided light with the surrounding medium and optimizing waveguide design for sensing applications. In the second part, the wavelength-dependent sensitivity of a racetrack ring resonator (RTRR) based on the Si3N4 waveguide is experimentally demonstrated. The results demonstrate a clear increase in the sensitivity of the RTRR, rising from 116.3 nm/RIU to 143.3 nm/RIU as the wavelength shifts from 1520 nm to 1600 nm. This trend provides valuable insights into the device’s enhanced performance at longer wavelengths, underscoring its potential for applications requiring high sensitivity in this spectral range. Full article
(This article belongs to the Special Issue Photonic and Optoelectronic Devices and Systems, Third Edition)
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