Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
6.0
3.0
Journals
Micromachines
Special Issues
Reliability Metrology, Testing and Failure Analysis of Semiconductor Devices
share announcement

Reliability Metrology, Testing and Failure Analysis of Semiconductor Devices

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".

Deadline for manuscript submissions: 30 August 2026 | Viewed by 2726

Special Issue Editor

Dr. Liangxing Hu

E-Mail Website
Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Interests: micromachining; nanofabrication; 3D integration; CMOS-MEMS stacking; advanced packaging
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Semiconductor devices such as CMOS, MEMS, sensors and actuators are essential for human beings, as they are widely used in our daily lives. With the development of technology, people are increasingly concerned about the quality and performance of semiconductor devices. There are some indicators that are used to assess the quality and performance of the devices. Reliability is one of the most important quality indicators and is affected by many factors, such as working conditions, temperature, pressure, electromigration, fatigue, vibration, lifetime, etc. There are many metrologies and approaches to characterize, test and identify the failure of semiconductor devices.

This Special Issue provides a platform for scholars to showcase their work in the field of semiconductor device reliability testing, failure analysis and metrology. The focus is primarily on metrology methods, characterization, testing and failure analysis related to the reliability of semiconductor devices. We encourage the submission of research highlighting recent progress and achievements in the characterization and failure analysis of sensor, actuator, MEMS and CMOS device reliability, as well as the metrology of semiconductor device reliability. We welcome original research, reviews (including mini reviews) and perspective articles on reliability metrology, testing and failure analysis of semiconductor devices. Topics of interest include, but are not limited to, the following research areas:

  • Reliability metrology, testing and failure analysis of sensors;
  • Reliability metrology, testing and failure analysis of actuators;
  • Reliability metrology, testing and failure analysis of MEMS devices;
  • Reliability metrology, testing and failure analysis of CMOS devices.

Dr. Liangxing Hu
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • reliability metrology
  • test
  • failure analysis
  • semiconductor devices
  • sensors
  • actuators
  • MEMS
  • CMOS devices

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

15 pages, 2631 KB  
Article
A Physics-Consistent Framework for Semiconductor Device Reliability Including Multiple Degradation Mechanisms
by Joseph B. Bernstein, Tsuriel Avraham and Bin Wang
Micromachines 2026, 17(3), 320; https://doi.org/10.3390/mi17030320 - 4 Mar 2026
Viewed by 664
Abstract
Reliability assessment of semiconductor devices increasingly requires the consideration of multiple degradation mechanisms acting simultaneously over long stress durations. Conventional lifetime qualification and prediction approaches rely on simplified assumptions that can obscure the interpretation of measured degradation data and lead to large uncertainty [...] Read more.
Reliability assessment of semiconductor devices increasingly requires the consideration of multiple degradation mechanisms acting simultaneously over long stress durations. Conventional lifetime qualification and prediction approaches rely on simplified assumptions that can obscure the interpretation of measured degradation data and lead to large uncertainty when extrapolated over many orders of magnitude in time. A consistent analytical framework is therefore required to relate measured degradation behavior to meaningful reliability metrics. This work presents a general framework for semiconductor device reliability that is consistent with established reliability theory and explicitly accommodates multiple competing degradation mechanisms, consistent with modern JEDEC reliability standards. The framework presented here separates physical degradation processes from analytical representations used to interpret experimental data, allowing the effect of independent mechanisms to be combined without imposing an implied physical model. Degradation behaviors exhibiting sublinear time dependence, which are commonly observed across device technologies, are discussed within this context. We show that common data interpretation practices can introduce systematic errors when ssublinearkinetics are present, particularly regarding lifetime extrapolation. A reformulated analytical representation is introduced that improves clarity and robustness in lifetime extraction while remaining fully compatible with standard reliability theory. This framework supports more consistent reliability assessment and more credible lifetime prediction across materials, devices, and operating conditions. Full article
(This article belongs to the Special Issue Reliability Metrology, Testing and Failure Analysis of Semiconductor Devices)
►▼ Show Figures

Figure 1

19 pages, 7178 KB  
Article
Cooperative Control Strategy for Low-Voltage Ride-Through of DFIGM Based on an Improved IGBT-Based Active Crowbar
by Yu Zhang, Kai Li, Zhi Chen, Yutian Sun and Liangxing Hu
Micromachines 2026, 17(2), 243; https://doi.org/10.3390/mi17020243 - 13 Feb 2026
Viewed by 318
Abstract
To address the low-voltage fault issue in doubly fed induction generator-motor (DFIGM) systems, this paper proposes a practically implementable cooperative control strategy that integrates an improved current reversely tracking control (CRTC) scheme with an enhanced IGBT-based active crowbar topology. The proposed method optimizes [...] Read more.
To address the low-voltage fault issue in doubly fed induction generator-motor (DFIGM) systems, this paper proposes a practically implementable cooperative control strategy that integrates an improved current reversely tracking control (CRTC) scheme with an enhanced IGBT-based active crowbar topology. The proposed method optimizes the current-tracking coefficients under rotor voltage and current constraints during LVRT operation. Meanwhile, the enhanced active crowbar provides reactive power support, thereby suppressing negative-sequence current components, mitigating harmonic distortion, and improving the power quality at the point of common coupling (PCC). A 10-MW DFIGM model is developed, and comparative studies are conducted with the conventional inductance emulating control (IEC) and the crowbar structure. The experimental results show the feasibility and effectiveness of the proposed method. Full article
(This article belongs to the Special Issue Reliability Metrology, Testing and Failure Analysis of Semiconductor Devices)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-2
Back to TopTop