CMOS-MEMS Fabrication Technologies and Devices, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A:Physics".

Deadline for manuscript submissions: 31 December 2025 | Viewed by 504

Special Issue Editor


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Guest Editor
School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
Interests: micromachining; nanofabrication; 3D integration; CMOS-MEMS stacking; advanced packaging
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Special Issue Information

Dear Colleagues,

Electronics are extremely popular in our daily life. Semiconductors such as complementary metal oxide semiconductor (CMOS) and micro-electro-mechanical system (MEMS) are key devices in the electronic field. CMOS can be integrated with MEMS components within a single chip (3D integration) to produce compact and low-cost CMOS-MEMS devices for multiple applications (sensing, detection, imaging, signal transmission, and others). Therefore, these devices’ fabrication and integration are essential for the development of modern society. This Special Issue aims to gather high quality research contributions dealing with MEMS devices integrated with CMOS, independently of fabrication technologies and final applications.

Dr. Liangxing Hu
Guest Editor

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Keywords

  • CMOS-MEMS fabrication technologies
  • CMOS
  • MEMS
  • CMOS-MEMS integration
  • 3D integration

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Published Papers (1 paper)

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Research

18 pages, 2661 KiB  
Article
Resonator Width Optimization for Enhanced Performance and Bonding Reliability in Wideband RF MEMS Filter
by Gwanil Jeon, Minho Jeong, Shungmoon Lee, Youngjun Jo and Nam-Seog Kim
Micromachines 2025, 16(8), 878; https://doi.org/10.3390/mi16080878 - 29 Jul 2025
Viewed by 245
Abstract
This research investigates resonator width optimization for simultaneously enhancing electrical performance and mechanical reliability in wideband RF MEMS filters through systematic evaluation of three configurations: 0% (L1), 60% (L2), and 100% (L3) matching ratios between cap and bottom wafers using Au-Au thermocompression bonding. [...] Read more.
This research investigates resonator width optimization for simultaneously enhancing electrical performance and mechanical reliability in wideband RF MEMS filters through systematic evaluation of three configurations: 0% (L1), 60% (L2), and 100% (L3) matching ratios between cap and bottom wafers using Au-Au thermocompression bonding. The study demonstrates that resonator width alignment significantly influences both electromagnetic field coupling and bonding interface integrity. The L3 configuration with complete width matching achieved optimal RF performance, demonstrating 3.34 dB insertion loss across 4.5 GHz bandwidth (25% fractional bandwidth), outperforming L2 (3.56 dB) and L1 (3.10 dB), while providing enhanced electromagnetic wave coupling and minimized contact resistance. Mechanical reliability testing revealed superior bonding strength for the L3 configuration, withstanding up to 7.14 Kgf in shear pull tests, significantly exceeding L1 (4.22 Kgf) and L2 (2.24 Kgf). SEM analysis confirmed uniform bonding interfaces with minimal void formation (~180 nm), while Q-factor measurements showed L3 achieved optimal loaded Q-factor (QL = 3.31) suitable for wideband operation. Comprehensive environmental testing, including thermal cycling (−50 °C to +145 °C) and humidity exposure per MIL-STD-810E standards, validated long-term stability across all configurations. This investigation establishes that complete resonator width matching between cap and bottom wafers optimizes both electromagnetic performance and mechanical bonding reliability, providing a validated framework for developing high-performance, reliable RF MEMS devices for next-generation communication, radar, and sensing applications. Full article
(This article belongs to the Special Issue CMOS-MEMS Fabrication Technologies and Devices, 2nd Edition)
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