GaN Heterostructure Devices: From Materials to Application, 2nd Edition
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 28 February 2026 | Viewed by 541
Special Issue Editor
Interests: electronic device; biosensor; THz device
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Gallium nitride and its related compound semiconductor materials (AlN, AlGaN, InGaN, InN) and heterostructures (AlGaN/GaN, InGaN/GaN, AlInGaN/GaN, etc.) are wide-band semiconductor materials with unique characteristics. Their successful application in solid-state lighting, power electronic devices, RF devices, UV-LED, Micro-LED, and ultraviolet photodetectors has promoted the rapid development of gallium nitride-based materials and devices. Gallium nitride-based materials have also shown significant applicative potential in some interdisciplinary fields. For example, due to their chemical stability and biological compatibility, researchers have considered their application in the fields of biomedicine and brain neuroscience. This Special Issue will publish research papers and review articles that focus on recent advances in gallium nitride-based materials and devices, including the application of novel research within related fields.
Prof. Dr. Baijun Zhang
Guest Editor
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Keywords
- GaN heterostructure
- optoelectronic devices
- electronic devices
- biosensor
- THz devices
- MEMS devices
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