Advanced Ferroelectric and Memristive Devices: Fundamentals and Applications
A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D1: Semiconductor Devices".
Deadline for manuscript submissions: 30 November 2026 | Viewed by 731
Special Issue Editor
Special Issue Information
Dear Colleagues,
The semiconductor industry is undergoing a revolutionary transition from conventional charge-based to emerging polarization-based computing paradigms. In this new era, system performance and energy efficiency are being redefined by the unique properties of ferroelectric components—including non-volatility, ultrafast switching speed, and nanoscale scalability. This transformative shift is being propelled by urgent technological demands in edge AI computing, ultra-low-power sensor networks, and next-generation non-volatile memory architectures.
We are now at a pivotal moment in ferroelectric materials research, witnessing remarkable innovations in hafnium-based ferroelectrics, 2D ferroelectric materials, and engineered multiferroic heterostructures that promise to redefine the landscape of modern electronics. This Special Issue is dedicated to showcasing and discussing the most significant advances in ferroelectric technologies, with particular focus on novel memory devices (FeRAM, FeFET, FTJ, Fe diodes), neuromorphic computing elements, piezoelectric sensors, and other emerging applications.
We enthusiastically welcome original contributions spanning fundamental research to technological applications, including but not limited to the following areas: discovery and optimization of new ferroelectric materials; advanced characterization of domain dynamics and switching mechanisms; device physics and reliability studies; innovative circuit design methodologies; and system-level integration. Particular attention will be given to interdisciplinary studies that synergize materials innovation with device engineering and system applications. We also encourage submissions featuring novel characterization techniques and computational modeling approaches for understanding complex ferroelectric phenomena.
Dr. Rongrong Cao
Guest Editor
Manuscript Submission Information
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Keywords
- ferroelectric devices
- ferroelectric random access memory (FeRAM)
- ferroelectric tunnel junction (FTJ)
- ferroelectric transistor (FeFET)
- ferroelectric diode
- polarizations
- domain walls
- neuromorphic computing
- computing in memory
- logic in memory
- piezoelectric sensors
- applications of ferroelectric devices
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