New Van der Waals Heterostructures for Opto and Nanoelectronics
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 2304
Special Issue Editor
2. Institute for Bionic Technologies and Engineering, I.M. Sechenov First Moscow State Medical University, Moscow 119991, Russia
Interests: nanoelectronics; mechanics of nanostructures; molecular modeling of nanostructures and biosystems; quantum chemistry and molecular dynamics; carbon nanostructures (fullerenes, nanotubes, graphene, graphane); condensed matter physics; materials science—biomaterials; biophysics
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Special Issue Information
Dear Colleagues,
Van der Waals heterostructures contain few layers of two-dimensional nanomaterials, with weak interaction between layers. Such materials can be composed from graphene, hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), other transition metal dichalcogenides (TMD), layered oxides, elements of IV and V groups, etc. These structures have outstanding optical, magnetic, and electronic properties that can be tuned by the number of layers and the type of stacking. Van der Waals heterostructures became essential elements of vertical field-effect transistors, ultrasensitive infrared photodetectors, and spin-filtering devices.
We welcome the submission of theoretical and experimental papers devoted to the synthesis of modern van der Waals heterostructures, analyses of its properties, and potential applications in various devices.
Prof. Dr. Olga E. Glukhova
Guest Editor
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Keywords
- two-dimensional (2D) materials
- graphene
- hexagonal boron nitride (hBN)
- molybdenum disulfide (MoS2)
- transition metal dichalcogenides (TMD)
- layered oxides
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