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New Van der Waals Heterostructures for Opto and Nanoelectronics
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New Van der Waals Heterostructures for Opto and Nanoelectronics

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 2304

Special Issue Editor

Prof. Dr. Olga E. Glukhova

E-Mail Website
Guest Editor
1. Department of Physics, Saratov State University, Saratov 410012, Russia
2. Institute for Bionic Technologies and Engineering, I.M. Sechenov First Moscow State Medical University, Moscow 119991, Russia
Interests: nanoelectronics; mechanics of nanostructures; molecular modeling of nanostructures and biosystems; quantum chemistry and molecular dynamics; carbon nanostructures (fullerenes, nanotubes, graphene, graphane); condensed matter physics; materials science—biomaterials; biophysics
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Special Issue Information

Dear Colleagues,

Van der Waals heterostructures contain few layers of two-dimensional nanomaterials, with weak interaction between layers. Such materials can be composed from graphene, hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), other transition metal dichalcogenides (TMD), layered oxides, elements of IV and V groups, etc. These structures have outstanding optical, magnetic, and electronic properties that can be tuned by the number of layers and the type of stacking. Van der Waals heterostructures became essential elements of vertical field-effect transistors, ultrasensitive infrared photodetectors, and spin-filtering devices.

We welcome the submission of theoretical and experimental papers devoted to the synthesis of modern van der Waals heterostructures, analyses of its properties, and potential applications in various devices.

Prof. Dr. Olga E. Glukhova
Guest Editor

Manuscript Submission Information

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Keywords

  • two-dimensional (2D) materials
  • graphene
  • hexagonal boron nitride (hBN)
  • molybdenum disulfide (MoS2)
  • transition metal dichalcogenides (TMD)
  • layered oxides

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Published Papers (1 paper)

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Research

15 pages, 8811 KiB  
Article
Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study
by Michael M. Slepchenkov, Dmitry A. Kolosov and Olga E. Glukhova
Materials 2022, 15(12), 4084; https://doi.org/10.3390/ma15124084 - 8 Jun 2022
Cited by 9 | Viewed by 3057
Abstract
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing [...] Read more.
At present, the combination of 2D materials of different types of conductivity in the form of van der Waals heterostructures is an effective approach to designing electronic devices with desired characteristics. In this paper, we design novel van der Waals heterostructures by combing buckled triangular borophene (tr-B) and graphene-like gallium nitride (GaN) monolayers, and tr-B and zinc oxide (ZnO) monolayers together. Using ab initio methods, we theoretically predict the structural, electronic, and electrically conductive properties of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. It is shown that the proposed atomic configurations of tr-B/GaN and tr-B/ZnO heterostructures are energetically stable and are characterized by a gapless band structure in contrast to the semiconductor character of GaN and ZnO monolayers. We find the phenomenon of charge transfer from tr-B to GaN and ZnO monolayers, which predetermines the key role of borophene in the formation of the features of the electronic structure of tr-B/GaN and tr-B/ZnO van der Waals heterostructures. The results of the calculation of the current–voltage (I–V) curves reveal that tr-B/GaN and tr-B/ZnO van der Waals heterostructures are characterized by the phenomenon of current anisotropy: the current along the zigzag edge of the ZnO/GaN monolayers is five times greater than along the armchair edge of these monolayers. Moreover, the heterostructures show good stability of current to temperature change at small voltage. These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors. Full article
(This article belongs to the Special Issue New Van der Waals Heterostructures for Opto and Nanoelectronics)
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