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Functional Crystals and Thin Film Materials
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Functional Crystals and Thin Film Materials

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Composites".

Deadline for manuscript submissions: closed (20 September 2023) | Viewed by 2311

Special Issue Editor

Dr. Guan-Yin Gao

E-Mail Website
Guest Editor
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
Interests: growth and preparation of functional thin films; the structure and physical properties of functional thin films

Special Issue Information

Dear Colleagues,

Functional materials, a kind of advanced and engineered material, have been designed and constructed with various characteristics. Because of their excellent properties, which include magnetism, electrical and optical properties, a large specific surface area, and superior mechanical capabilities, functional materials are widely used in a variety of fields, including information, engineering, medicine, and space applications. Crystal doping, film thickness, and lattice mismatch are frequently used to tune and investigate the unique properties of functional materials. For example, doping allows the electronic state of manganese oxides La1-xCaxMnO3 with perovskite structure to transition from the insulating state to the metallic and charge-ordered states.

However, as a fast-growing research area, some new functional materials, such as graphene and other 2D materials, nickel-based superconductors, topological insulators, and metal halide materials, have entered this area in recent years. It is becoming increasingly important to address the achievements and applications of functional materials.

For this Special issue, we would like to invite contributions from researchers working on the growth and development of crystal and novel thin films, epitaxy, coating, interface and surface analysis, surface characterization, the study of relevant properties, and growth materials (including thin films, crystals, and nanostructures).

Original research articles as well as reviews are both welcome in this Special Issue. Topics of interest may include, but are not limited to, the following:

  • The synthesis methods of functional materials;
  • The growth of crystals;
  • The deposition of thin films, coatings, or junctions;
  • The engineering and modulation of properties;
  • Material characterization methods.

Dr. Guan-Yin Gao
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • functional materials
  • crystal materials
  • coating materials
  • thin films and junctions
  • devices
  • properties engineering

Published Papers (1 paper)

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Research

17 pages, 4179 KiB  
Article
Charge Trapping and Emission Properties in CAAC-IGZO Transistor: A First-Principles Calculations
by Ziqi Wang, Nianduan Lu, Jiawei Wang, Di Geng, Lingfei Wang and Guanhua Yang
Materials 2023, 16(6), 2282; https://doi.org/10.3390/ma16062282 - 12 Mar 2023
Cited by 2 | Viewed by 2070
Abstract
The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10−22 A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the instabilities leaded by the drift of the threshold [...] Read more.
The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10−22 A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the instabilities leaded by the drift of the threshold voltage in various stress seriously affect the device application. To better develop high performance CAAC-IGZO FET for DRAM applications, it’s essential to uncover the deep physical process of charge transport mechanism in CAAC-IGZO FET. In this work, by combining the first-principles calculations and nonradiative multiphonon theory, the charge trapping and emission properties in CAAC-IGZO FET have been systematically investigated. It is found that under positive bias stress, hydrogen interstitial in Al2O3 gate dielectric is probable effective electron trap center, which has the transition level (ε (+1/−1) = 0.52 eV) above Fermi level. But it has a high capture barrier about 1.4 eV and low capture rate. Under negative bias stress, oxygen vacancy in Al2O3 gate dielectric and CAAC-IGZO active layer are probable effective electron emission centers whose transition level ε (+2/0) distributed at −0.73~−0.98 eV and 0.69 eV below Fermi level. They have a relatively low emission barrier of about 0.5 eV and 0.25 eV and high emission rate. To overcome the instability in CAAC-IGZO FET, some approaches can be taken to control the hydrogen concentration in Al2O3 dielectric layer and the concentration of the oxygen vacancy. This work can help to understand the mechanisms of instability of CAAC-IGZO transistor caused by the charge capture/emission process. Full article
(This article belongs to the Special Issue Functional Crystals and Thin Film Materials)
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