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Advances in Nanomaterials for (Opto-)electronic Devices
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Advances in Nanomaterials for (Opto-)electronic Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (10 January 2025) | Viewed by 5359

Special Issue Editors

Dr. Lin Wang

E-Mail Website
Guest Editor
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, China
Interests: (opto)electronics; 1D/2D materials; Ferroelectrics; scanning probe microscopy
Special Issues, Collections and Topics in MDPI journals
Dr. Junyong Wang

E-Mail Website
Guest Editor
Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
Interests: 2D materials; photonics; optoelectronic devices

Special Issue Information

Dear Colleagues,

(Opto-)electronic functional devices represent a class of components that are indispensable in our information society, as they play important roles in information generation, modulation, sending, transmission, sensing, processing, displaying, etc. The age of Internet of Things (IoT) is placing rising requirements on future-generation optoelectronic devices in terms of their volume, performance, power consumption, multi-functionality, flexibility, and wearability, to name a few. In this context, nanomaterials (0D, 1D, 2D), as a result of their appealing properties arising from reduced dimensionality, have demonstrated rich potential to meet the stringent demands for diverse electronic as well as optoelectronic devices ranging from logic transistors, memories, and synaptic devices, to photodetectors, light-emitting diodes, photovoltaic cells, and optical modulators. Novel devices-of-concept such as spintronic devices, optoelectronic synapses and spin-valley lasers are also under investigation. Besides the exploration of each class of low dimensional materials (0D, 1D, and 2D) towards (opto-)electronic device applications, abundant opportunities are to be explored in mixed dimensional structures from their combination.

This Special Issue aims to collect original research articles and reviews in the rapidly developing field through both fundamental studies and practical applications. Topics covered include, but are not limited to, the synthesis and growth of nanomaterials, the construction and characterization of functional structures, and the fabrication and characterization of (opto-)electronic devices.

Dr. Lin Wang
Dr. Junyong Wang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronics
  • photodetector
  • light-emitting diode
  • photovoltaics
  • optical modulator
  • optoelectronic synapse
  • optoelectronic memory
  • in-sensor computing
  • 1D materials
  • 2D materials

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Published Papers (2 papers)

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12 pages, 2094 KiB  
Article
Synthesis and Properties of Size-Adjustable CsPbBr3 Nanosheets for Potential Photocatalysis
by Qi Liu, Hang Li, Xiaoqian Wang, Jiazhen He, Xuemin Luo, Mingwei Wang, Jinfeng Liu and Yong Liu
Materials 2024, 17(11), 2563; https://doi.org/10.3390/ma17112563 - 27 May 2024
Cited by 1 | Viewed by 2274
Abstract
Amidst the rapid advancements in the fields of photovoltaics and optoelectronic devices, CsPbBr3 nanosheets (NSs) have emerged as a focal point of research due to their exceptional optical and electronic properties. This work explores the application potential of CsPbBr3 NSs in [...] Read more.
Amidst the rapid advancements in the fields of photovoltaics and optoelectronic devices, CsPbBr3 nanosheets (NSs) have emerged as a focal point of research due to their exceptional optical and electronic properties. This work explores the application potential of CsPbBr3 NSs in photonic and catalytic domains. Utilizing an optimized hot-injection method and a ZnBr2-assisted in situ passivation strategy, we successfully synthesized CsPbBr3 NSs with controlled dimensions and optical characteristics. Comprehensive characterization revealed that the nucleation environment and thickness significantly influenced the structure and optical performance of the materials. The results indicate that the optimized synthesis method enables control over the lateral dimensions of the nanoparticles, ranging from 9.1 ± 0.06 nm to 334.5 ± 4.40 nm, facilitating the tuning of the excitation wavelength from 460 nm (blue) to 510 nm (green). Further analyses involving photoresponse and electrochemical impedance spectroscopy demonstrated the substantial potential of these NSs in applications such as photocatalysis and energy conversion. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for (Opto-)electronic Devices)
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Review

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25 pages, 8003 KiB  
Review
Perovskite versus Standard Photodetectors
by Antoni Rogalski, Weida Hu, Fang Wang, Yang Wang and Piotr Martyniuk
Materials 2024, 17(16), 4029; https://doi.org/10.3390/ma17164029 - 13 Aug 2024
Cited by 3 | Viewed by 2401
Abstract
Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their [...] Read more.
Perovskites have been largely implemented into optoelectronics as they provide several advantages such as long carrier diffusion length, high absorption coefficient, high carrier mobility, shallow defect levels and finally, high crystal quality. The brisk technological development of perovskite devices is connected to their relative simplicity, high-efficiency processing and low production cost. Significant improvement has been made in the detection performance and the photodetectors’ design, especially operating in the visible (VIS) and near-infrared (NIR) regions. This paper attempts to determine the importance of those devices in the broad group of standard VIS and NIR detectors. The paper evaluates the most important parameters of perovskite detectors, including current responsivity (R), detectivity (D*) and response time (τ), compared to the standard photodiodes (PDs) available on the commercial market. The conclusions presented in this work are based on an analysis of the reported data in the vast pieces of literature. A large discrepancy is observed in the demonstrated R and D*, which may be due to two reasons: immature device technology and erroneous D* estimates. The published performance at room temperature is even higher than that reported for typical detectors. The utmost D* for perovskite detectors is three to four orders of magnitude higher than commercially available VIS PDs. Some papers report a D* close to the physical limit defined by signal fluctuations and background radiation. However, it is likely that this performance is overestimated. Finally, the paper concludes with an attempt to determine the progress of perovskite optoelectronic devices in the future. Full article
(This article belongs to the Special Issue Advances in Nanomaterials for (Opto-)electronic Devices)
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