Wide- and Ultra-Wide-Bandgap Semiconductors: Properties, Synthesis and Devices

Dear Colleagues,

The field of wide- and ultra-wide-bandgap (WBG and UWBG) semiconductors is rapidly evolving, driven by the increasing demand for high-performance electronic, optoelectronic, and sensing devices capable of operating under extreme temperature, power, and radiation conditions. This Special Issue aims to provide a comprehensive platform for recent advances in the material science, device engineering, and application developments of key WBG and UWBG materials, including diamond, aluminum nitride (AlN), silicon carbide (SiC), and gallium nitride (GaN). Both single-crystalline and polycrystalline forms of these materials are of interest.

The scope of this Special Issue covers the entire value chain, from fundamental materials properties and innovative synthesis techniques to device-level design and application. Special emphasis will be placed on the development and characterization of advanced device structures, especially transistors for power conversion, RF communication, and high-temperature or harsh-environment sensing. Topics of interest include, but are not limited to, the following:

• Growth and doping of diamond, AlN, SiC, and GaN crystals;
• Epitaxial layer engineering and heterostructure design;
• Defect characterization and control;
• Novel transistor architectures (e.g., HEMTs, MESFETs, JFETs, FinFETs);
• Device fabrication and packaging for high-temperature and high-voltage operation;
• Electrical, thermal, and reliability measurements;
• TCAD simulation and multiphysics modeling;
• Application in power electronics, energy systems, aerospace, automotive, and sensor technologies.

We invite original research articles, comprehensive reviews, and perspectives from academia and industry that highlight progress and challenges in the WBG/UWBG semiconductor landscape. This Special Issue intends to foster cross-disciplinary collaboration and accelerate innovation across materials science, device physics, and systems integration.

Prof. Dr. Qiliang Li
Guest Editor

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