The Synthesis and Applications of Two-Dimensional Hexagonal Boron Nitride in Electronics and Optics
A special issue of Materials (ISSN 1996-1944).
Deadline for manuscript submissions: closed (20 August 2023) | Viewed by 259
Special Issue Editor
Special Issue Information
Dear Colleagues,
Recently, two-dimensional hexagonal boron nitrides attract considerable interest due to their wide range of scientific and technological applications in electronics and optics. More specifically, h-BN consists of two-dimensional hexagonal net-like layers of boron and nitrogen atoms. Those layers are stacked along the normal-to-layer direct. Consequently, h-BN is isostructural to graphene which is a primary crystal lattice of two-dimensional materials. In contrast to highly conductive graphene, h-BN is regarded as a wide-band-gap material with an indirect band gap. Although the typical band gap h-BN is around 5 eV, various different reports on the band gap energy of h-BN are found in the literature covering from 3.6 eV to 7.1 eV depending on the state of materials. Owing to their excellent electronic and structural nature, h-BN finds various optical application including photonic devices, phosphors, etc.
Thus, this Special Issue aims to summarize and report recent research achievements in electronic and optical application of hexagonal boron nitrides. This Special Issue provides a platform for the collection of the eminent advancement of this field. The main subject of this Special Issue regards hexagonal boron nitride, including a variety of its electronic and optical applications.
Potential topics include, but are not limited to, the following:
- Novel synthesis routes for high-quality h-BN;
- The modification of materials properties via a variety of methods, including the doping of foreign atoms, the introduction of atomic defects, etc.;
- The development of electronic and optical devices utilizing special properties of h-BN;
- Electron transport and luminescence investigations;
- The application of electronic and optical properties of h-BN.
Dr. Young-Kuk Kim
Guest Editor
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