Special Issue "Micro- and Nanotechnology of Wide Bandgap Semiconductors"
A special issue of Electronics (ISSN 2079-9292).
Deadline for manuscript submissions: closed (31 October 2020).
A printed edition of this Special Issue is available here.
Interests: Micro- and nanotechnology of wide bandgap semiconductors; GaN-based devices RF and high power application; II-VI oxide semiconductors for sensors
Interests: GaN; ZnO; oxides; nitrides
Special Issues, Collections and Topics in MDPI journals
Owing to their unique characteristics—direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation in high-temperature environments and low sensitivity to ionizing radiation gallium nitride (GaN) and related group III-nitride heterostructures have proven to be enabling materials for advanced optoelectronic and electronic devices and systems. Today they are widely used in short-wavelength light-emitting diodes (LEDs) and laser diodes (LDs), high-performing radar, wireless telecommunications, as well as ‘green’ power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems and new challenges continue to arise and need to be solved. The lighting industry, RF defense industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach the full potential of GaN-based semiconductors. In the literature, there are a number of review papers and publications reporting technology progress and indicating future trends.
In this Special Issue of Electronics, 12 papers will be published, the majority of them are focused materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include the following: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, drift layers by HVPE, MOVPE, and MBE, advances in ion implantation of GaN and related materials, high-pressure processing (lattice reconstruction) of ion-implanted GaN (Mg and Be), novel metallization schemes for ohmic contacts, thermal issues in GaN HEMTs, AlGaN/GaN HEMTs on native substrates, laser diodes based on MOVPE and MBE epitaxy including vertically integrated devices with tunnel junctions, monolithic green-blue and red-green-blue LED structures for highly efficient displays, external cavity laser diodes for quantum technologies applications, porous GaN for supercondensators, and III-nitride nanowires for LEDs.Prof. Dr. Anna B. Piotrowska
Prof. Dr. Eliana Kamińska
Prof. Dr. Wojtek Wojtasiak
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
- III-nitride heterostructures
- native GaN substrates
- ion implantation
- device processing
- laser diodes
- RF HEMTs
- vertical electronic devices