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Special Issue "Microwave/ Millimeter-Wave Devices and MMICs"
Deadline for manuscript submissions: closed (30 November 2015).
Division of Microelectronics, School of Electrical & Electronic Engineering, College of Engineering, Nanyang Technological University, Singapore 639798, Singapore
Interests: compound semiconductor based high frequency devices; gallium nitride on silicon HEMTs; MMIC
Special Issues and Collections in MDPI journals
Special Issue in Micromachines: Advances in MMICs
Microwave/millimeter-wave devices and MMICs were originally researched for the primary purpose of military applications. However, these devices have nowadays penetrated into wider areas of commercial applications, such as wireless communications, satellite communications, wireless local area networks, and collision avoidance automotive radars. The World’s first RF microwave GaAs MESFET and the MMIC amplifier were demonstrated in 1967 and 1975 respectively, and since then, various types of transistors (e.g., HEMTs, mHEMTs, HBTs, CMOS, etc.) have also managed to achieve cutoff frequencies in the microwave/millimeter-wave regime. The advent of such high performance device technologies has been enabled by both the abilities to scale down device geometries and through the integration of new materials (such as SiGe, InP, GaN) into those transistors. To date, the maximum achievable frequency of operation is greater than 1 THz and a MMIC amplifier operating beyond 300GHz has been realized using 50nm gate-length InP HEMTs. With aggressive device scaling, Si CMOS and MMICs have also pushed their operating frequencies into the millimeter/sub-millimeter-wave regimes.
This Special Issue will invite manuscripts on microwave/millimeter-wave devices and MMIC-related papers in areas, including, but not limited to, novel material and fabrication technologies, design, and simulations, electrical characterization techniques, and reliabilities. The papers submitted may be original contributions or reviews. After close to five decades since the report of the first microwave GaAs MESFET, we aim for this Special Issue to gather papers, which will provide us with insight on the evolution, as well as the current and future trends of microwave/millimeter-wave devices and MMICs.
Dr. Geok Ing Ng
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.