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Electronics
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THz Electronic Components and Devices
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THz Electronic Components and Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (31 May 2020) | Viewed by 5417

Special Issue Editors

Prof. Dr. Xiaodong Chen

E-Mail Website
Guest Editor
School of Electronic Engineering and Computer Science, Queen Mary, University of London, Mile End Road, London E1 4FZ, UK
Interests: microwave and millimeter wave devices; antennas; wireless communications; bio-electromagnetics
Prof. Dr. Alan Phelps

E-Mail Website
Guest Editor
Department of Physics, University of Strathclyde, Glasgow G4 0NG, UK
Interests: experimental and computational plasma physics; intense electron beams; mm-wave sources; high-power microwaves and their applications
Prof. Dr. Guoqing Luo

E-Mail Website1 Website2
Guest Editor
Key Laboratory of RF Circuits & System of Ministry of Education, School of Electronics and Information, Hangzhou Dianzi University, Xiasha High Education Park, Hangzhou 310018, China
Interests: microwave and mm-wave passive devices; antennas; and frequency selective surfaces

Special Issue Information

Dear Colleagues,

Following the UCMMT 2019 conference, “The 12th UK/Europe–China Workshop on Millimeter-Waves and Terahertz Technologies” held in London, United Kingdom, on 20–22 August 2019, the authors of papers that were presented on the topics listed below at UCMMT 2019 are now invited to submit their extended versions to this Special Issue. Submitted papers should be extended to the size of regular research or review articles, with at least a 50% extension of new results.

The Special Issue on “THz Electronic Components and Devices” is intended to include a wide range of THz and mm-wave electronic components, diode detectors and mixers,  THz and mm-wave solid state electronic components and sources including Si, GaAs, InGaAS, AlAs and GaN materials,  modulators, THz and mm-wave vacuum electronic sources, e.g., TWTs, klystrons, EIOs, and gyrotrons.

Prof. Dr. Xiaodong Chen
Prof. Dr. Alan Phelps
Prof. Dr. Guoqing Luo
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • THz and mm-wave
  • THz electronics
  • THz electronic components
  • THz sources

Published Papers (2 papers)

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Research

16 pages, 5232 KiB  
Article
128.76–129.56 GHz Fundamental Voltage Control Oscillator in 65 nm CMOS
by Guodong Su, Dirong Chen, Kaixuan Pang, Haijun Gao, Jiangtao Su and Lingling Sun
Electronics 2020, 9(6), 898; https://doi.org/10.3390/electronics9060898 - 28 May 2020
Cited by 1 | Viewed by 2729
Abstract
This paper presented a fundamental voltage control oscillator (VCO), and its operating frequency ranged from 128.76 GHz to 129.56 GHz. A differential low negative coupling shield switch (DLNCSS) inductor was proposed and analyzed, which helped to improve the tuning range and phase noise [...] Read more.
This paper presented a fundamental voltage control oscillator (VCO), and its operating frequency ranged from 128.76 GHz to 129.56 GHz. A differential low negative coupling shield switch (DLNCSS) inductor was proposed and analyzed, which helped to improve the tuning range and phase noise of the presented VCO. Meanwhile, an improved transformer-coupled resonant tank, which consisted of DLNCSS inductor and differential varactor using the common-cathode structure, was used to improve the phase noise of the proposed VCO further. This presented VCO was designed and fabricated by using 65 nm CMOS process, which occupied a compact area of 0.23 mm2, including all testing pads. The measurement results showed that this VCO consumed 11.2 mW from a 1.4 V supply and had the tuning range of 0.8 GHz. The output power ranged from −11.8 dBm to −10.6 dBm in its operating frequency band. The post-layout simulation showed that the phase noise at 1 MHz was better than −82 dBc/Hz. Full article
(This article belongs to the Special Issue THz Electronic Components and Devices)
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9 pages, 4228 KiB  
Article
Design of a Schottky Metal-Brim Structure to Optimize 180–220 GHz Broadband Frequency Doubler MMIC
by Luwei Qi, Jin Meng, Xiaoyu Liu, Chengyue Yang, Jingtao Zhou, Dehai Zhang and Zhi Jin
Electronics 2020, 9(5), 715; https://doi.org/10.3390/electronics9050715 - 26 Apr 2020
Cited by 2 | Viewed by 2207
Abstract
The present work proposes a 180–225 GHz broadband frequency doubler monolithic microwave integrated circuit (MMIC) based on a novel Schottky barrier diode (SBD) terminal structure denoted as a Schottky metal-brim (SMB). Compared with an MMIC adopting the conventional SBD terminal structure, preliminary measurements [...] Read more.
The present work proposes a 180–225 GHz broadband frequency doubler monolithic microwave integrated circuit (MMIC) based on a novel Schottky barrier diode (SBD) terminal structure denoted as a Schottky metal-brim (SMB). Compared with an MMIC adopting the conventional SBD terminal structure, preliminary measurements show that the maximum output power of the MMIC adopting the SMB structure increases from 0.216 mW at 206 GHz to 0.914 mW at 208 GHz. Analysis of the nonlinear current–voltage and capacitance–voltage characteristics of the two terminal structures based on an extended one-dimensional drift-diffusion model, indicates that the SMB structure provides significantly better conversion efficiency than the conventional SBD structure by eliminating the accumulation of charge and additional current paths near the Schottky electrode edge. It provides a feasible scheme for the optimization of MMIC applications requiring high power and high efficiency. Full article
(This article belongs to the Special Issue THz Electronic Components and Devices)
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