Advances in Semiconductor GaN and Applications

Dear Colleagues,

(1) With the remarkable developments of InGaN/GaN LEDs and AlGaN/GaN HEMTs, how to further enhance the performance of GaN-based electronic and optoelectronic devices as well as how to explore more application scenarios are some of the general concerns. This Special Issue aims to highlight the research progress of GaN-based semiconductors and their related applications, including the epitaxy and defect properties of GaN-based materials, structural and technological advances in electronic and optoelectronic devices, and the development of related display, communication, and circuit systems;

(2) Original research articles and reviews are welcome in this Special Issue. Research areas may include three aspects, namely materials, processing, and devices. Details include, but are not limited to, the following: the MOCVD, MBE, and HVPE of GaN and its ternary alloys, GaN-based nanostructures, defects and their suppression, high-efficiency doping in high-Al-composition AlGaN, low-resistivity ohmic contacts, dry etching and wet treatment, surface and interface properties of GaN-based heterostructures, high-power-density converters, terahertz devices, high-efficiency AlGaN (InGaN) UV (visible) LEDs and micro-LEDs, UV/visible laser diodes, high-sensitivity and high-speed UV/visible photodetectors, displays based on micro-LEDs, visible light communication systems based on GaN, and GaN-based power electronic modules. Novel explorations and applications based on GaN material systems are also encouraged, such as new understandings on defect characteristics, device construction utilizing polarization electric fields, and the heterogeneous integration of GaN materials with other materials, etc.

Dr. Zesheng Lv
Guest Editor

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