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Electronics
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Advances in Semiconductor GaN and Applications
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Advances in Semiconductor GaN and Applications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 15 September 2025 | Viewed by 248

Special Issue Editor

Dr. Zesheng Lv

E-Mail Website
Guest Editor
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China
Interests: epitaxy and characterization of Ⅲ-nitrides; UV–visible photodetectors

Special Issue Information

Dear Colleagues,

(1) With the remarkable developments of InGaN/GaN LEDs and AlGaN/GaN HEMTs, how to further enhance the performance of GaN-based electronic and optoelectronic devices as well as how to explore more application scenarios are some of the general concerns. This Special Issue aims to highlight the research progress of GaN-based semiconductors and their related applications, including the epitaxy and defect properties of GaN-based materials, structural and technological advances in electronic and optoelectronic devices, and the development of related display, communication, and circuit systems;

(2) Original research articles and reviews are welcome in this Special Issue. Research areas may include three aspects, namely materials, processing, and devices. Details include, but are not limited to, the following: the MOCVD, MBE, and HVPE of GaN and its ternary alloys, GaN-based nanostructures, defects and their suppression, high-efficiency doping in high-Al-composition AlGaN, low-resistivity ohmic contacts, dry etching and wet treatment, surface and interface properties of GaN-based heterostructures, high-power-density converters, terahertz devices, high-efficiency AlGaN (InGaN) UV (visible) LEDs and micro-LEDs, UV/visible laser diodes, high-sensitivity and high-speed UV/visible photodetectors, displays based on micro-LEDs, visible light communication systems based on GaN, and GaN-based power electronic modules. Novel explorations and applications based on GaN material systems are also encouraged, such as new understandings on defect characteristics, device construction utilizing polarization electric fields, and the heterogeneous integration of GaN materials with other materials, etc.

Dr. Zesheng Lv
Guest Editor

Manuscript Submission Information

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Keywords

  • epitaxy of GaN materials
  • processing technologies
  • GaN-based power electronics
  • light-emitting diodes
  • laser diodes
  • UV/visible photodetectors
  • high-frequency converters
  • micro-LEDs

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Published Papers (1 paper)

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Research

13 pages, 1463 KiB  
Article
Weak-Light-Enhanced AlGaN/GaN UV Phototransistors with a Buried p-GaN Structure
by Haiping Wang, Feiyu Zhang, Xuzhi Zhao, Haifan You, Zhan Ma, Jiandong Ye, Hai Lu, Rong Zhang, Youdou Zheng and Dunjun Chen
Electronics 2025, 14(10), 2076; https://doi.org/10.3390/electronics14102076 - 20 May 2025
Viewed by 126
Abstract
We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN [...] Read more.
We propose a novel ultraviolet (UV) phototransistor (PT) architecture based on an AlGaN/GaN high electron mobility transistor (HEMT) with a buried p-GaN layer. In the dark, the polarization-induced two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction interface is depleted by the buried p-GaN and the conduction channel is closed. Under UV illumination, the depletion region shrinks to just beneath the AlGaN/GaN interface and the 2DEG recovers. The retraction distance of the depletion region during device turn-on operation is comparable to the thickness of the AlGaN barrier layer, which is an order of magnitude smaller than that in the conventional p-GaN/AlGaN/GaN PT, whose retraction distance spans the entire GaN channel layer. Consequently, the proposed device demonstrates significantly enhanced weak-light detection capability and improved switching speed. Silvaco Atlas simulations reveal that under a weak UV intensity of 100 nW/cm2, the proposed device achieves a photocurrent density of 1.68 × 10−3 mA/mm, responsivity of 8.41 × 105 A/W, photo-to-dark-current ratio of 2.0 × 108, UV-to-visible rejection ratio exceeding 108, detectivity above 1 × 1019 cm·Hz1/2/W, and response time of 0.41/0.41 ns. The electron concentration distributions, conduction band variations, and 2DEG recovery behaviors in both the conventional and novel structures under dark and weak UV illumination are investigated in depth via simulations. Full article
(This article belongs to the Special Issue Advances in Semiconductor GaN and Applications)
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