Advances in Nanoelectronic, Nanomagnetic and Spintronic Device

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 2096

Special Issue Editor


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Guest Editor
National Institute for Materials Physics, 077125 Magurele, Ilfov, Romania
Interests: nanoelectronics; nanomagnetism; materials science

Special Issue Information

Dear Colleagues,

Steady and continuous advancement in the field of nanoelectronics, nanomagnetic materials and spintronics is overwhelming and has generally been achieved as a response to a specific application, property, or technological need. There are several different disciplines that fundamentally converge into generating interdisciplinar knowledge, needed to create novel devices, processes and technologies, as a response to various application requests.

Within the present Special Issue we invite fundamental contributions in the emerging fields of nanoelectronics, spintronics, photonics, spin orbitronics and magnetism, as well as applicative contributions dealing with the interplay of these emerging fields towards conception and design of advanced nanodevices, systems-on-a-chip, integration platforms, networks-on-a-chip, lab-on-a-chip and other complex hierarchical devices with multiple functionalities.

This Special Issue welcomes contributions linked to: advanced systems for magnetic nanotagging, advanced CMOS prototyping, arrays of bio-functionalized sensors, hybrid integration of photonic, plasmonic and phononic systems into Silicon-on-Insulator platforms for advanced nanoelectronics.

The applicability of the interdisciplinary topic contains, without being limited to, nano-magnet logic devices, integration platform with magnetic-electronic-photonic capabilities, spintronic-photonic memory chips, THz emissive spintronic devices, all-optical switching memories, arrays of sensing devices, electric field switching magnetic heterostructures, spin-torque and spin-Hall nano-oscillators, reconfigurable electronics using multiferroics, materials with large magnetoelectric coupling for next-generation multifunctional devices, neuromorphic spintronics, electric-field tunable microwave resonators, other data and memory applications from cache to storage.

We also welcome interdisciplinary contributions, as advanced nanoscale materials have a tremendous range of applicability for almost every aspect of contemporary technology: artificial intelligence, machine learning, automotive, sensoring, photonics, renewable energy, biomedical applications, high-tech, information and communications technologies, environment, space and security applications, power generation and many others.

Together with the Editorial Board, we will maintain an expedited article processing procedure, including a competent, transparent, and fast peer review, to ensure the fastest dissemination of your research results.

Dr. Ovidiu Crisan
Guest Editor

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Keywords

  • nano-magnet logic devices
  • spintronic-photonic memory chips
  • THz emission
  • spintronic devices
  • all-optical switching memories
  • arrays of sensors
  • spintronics
  • spin-orbitronics
  • neuromorphic devices
  • reconfigurable electronics
  • tunable microwave resonators

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Published Papers (1 paper)

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Research

11 pages, 3242 KiB  
Communication
Ultra High-Density SOT-MRAM Design for Last-Level On-Chip Cache Application
by Yeongkyo Seo and Kon-Woo Kwon
Electronics 2023, 12(20), 4223; https://doi.org/10.3390/electronics12204223 - 12 Oct 2023
Cited by 2 | Viewed by 1697
Abstract
This paper presents ultra high-density spin-orbit torque magnetic random-access memory (SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many appealing attributes of low write energy, nonvolatility, and high reliability, it poses challenges to ultra-high-density memory implementation. Due to using two access transistors [...] Read more.
This paper presents ultra high-density spin-orbit torque magnetic random-access memory (SOT-MRAM) for last-level data cache application. Although SOT-MRAM has many appealing attributes of low write energy, nonvolatility, and high reliability, it poses challenges to ultra-high-density memory implementation. Due to using two access transistors per cell, the vertical dimension of SOT-MRAM is >40% longer than that of the spin-transfer torque magnetic random-access memory (STT-MRAM), a single transistor-based design. Moreover, the horizontal dimension cannot be reduced below two metal pitches due to the two vertical metal stacks per cell. This paper proposes an ultra-high-density SOT-MRAM design by reducing the vertical and horizontal dimensions. The proposed SOT-MRAM is designed by a single transistor with a Schottky diode to achieve lesser vertical dimension than the two-transistor-based design of conventional SOT-MRAM. Moreover, the horizontal dimension is also reduced by sharing a vertical metal between two consecutive bit-cells in the same row. The comparison of the proposed designs with the conventional SOT-MRAM reveals a 63% area reduction. Compared with STT-MRAM, the proposed high-density memory design achieves 48% higher integration density, 68% lower write power, 29% lower read power, and 1.9× higher read-disturb margin. Full article
(This article belongs to the Special Issue Advances in Nanoelectronic, Nanomagnetic and Spintronic Device)
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