Wide and Ultrawide Band Gap Semiconductors: Materials and Devices

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Semiconductor Devices".

Deadline for manuscript submissions: 31 October 2024 | Viewed by 1065

Special Issue Editors


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Guest Editor
Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Interests: wide bandgap semiconductor; electronic devices; functional oxides
Special Issues, Collections and Topics in MDPI journals

E-Mail Website
Guest Editor
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Interests: III-nitride thin-film growth; optoelectronic and power devices

Special Issue Information

Dear Colleagues,

Wide- and ultrawide-bandgap semiconductors exhibit competitive advantages in developing next-generation power electronics, ultraviolet LEDs, photodetectors, and quantum devices. Featured by a bandgap larger than 3.2 eV, emerging wide- and ultrawide-bandgap semiconductors include oxides (Ga2O3 and ZnGa2O4), nitrides (GaN, AlGaN, and BN), carbide (SiC), and diamond. Exploring the full potential of these semiconductors requires the comprehensive study of material growth and structural characterization, doping control and defect analysis, and device design and application. Therefore, this Special Issue intends to present a themed collection related to the field of wide- and ultrawide-bandgap semiconductor devices.

We invite the submission of original research contributions and reviews in areas including, but not limited to, the homoepitaxy and heterojunction of wide- and ultrawide-bandgap semiconductors; metastable phase control and stabilization; quantum-well fabrication and characterization; the development of novel growth and characterization methods; theoretical calculations of the formation and activation of semiconductor defects; novel transport phenomena and defect characterization techniques; device simulation; power device applications, including diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs); ultraviolet LEDs and photodetectors; and quantum information devices.

Specific research areas may include (but are not limited to) the following:

  • Epitaxy of wide- and ultrawide-bandgap semiconductors, including oxides (Ga2O3 and ZnGa2O4), nitrides (GaN, AlGaN, and BN), carbide (SiC), and diamond;
  • Heterostructure design, phase control, and interface-driven phenomena;
  • DFT calculations of defects in semiconductors;
  • Carrier transport simulation and characterization methods;
  • Power devices including diodes and MOSFETs;
  • Ultraviolet LEDs and photodetectors.

Prof. Dr. Wenrui Zhang
Prof. Dr. Wei Guo
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • wide-gap semiconductors
  • epitaxy
  • defects
  • interface
  • power electronics
  • LED
  • photodetectors
  • oxides
  • nitrides
  • diamond

Published Papers (2 papers)

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Research

14 pages, 2563 KiB  
Article
Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiNx Interlayer
by Zhehan Yu, Yijun Dai, Ke Tang, Tian Luo, Shengli Qi, Smriti Singh, Lu Huang, Jichun Ye, Biplab Sarkar and Wei Guo
Electronics 2024, 13(9), 1679; https://doi.org/10.3390/electronics13091679 - 26 Apr 2024
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Abstract
We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with [...] Read more.
We conducted a comparative study on the characterization of Ga-polar and N-polar GaN metal–insulator–semiconductor (MIS) Schottky contact with a SiNx gate dielectric. The correlation between the surface morphology and the current–voltage (I–V) characteristics of the Ga- and N-polar GaN Schottky contact with and without SiNx was established. The insertion of SiNx helps in reducing the reverse leakage current for both structures, even though the leakage is still higher for N-polar GaN, consistent with the Schottky barrier height calculated using X-ray photoelectron spectroscopy. To optimize the electric property of the N-polar device, various substrate misorientation angles were adopted. Among the different misorientation angles of the sapphire substrate, the GaN MIS Schottky barrier diode grown on 1° sapphire shows the lowest reverse leakage current, the smoothest surface morphology, and the best crystalline quality compared to N-polar GaN grown on 0.2° and 2° sapphire substrates. Furthermore, the mechanism of the reverse leakage current of the MIS-type N-polar GaN Schottky contact was investigated by temperature-dependent I–V characterization. FP emissions are thought to be the dominant reverse conduction mechanism for the N-polar GaN MIS diode. This work provides a promising approach towards the optimization of N-polar electronic devices with low levels of leakage and a favorable ideality factor. Full article
(This article belongs to the Special Issue Wide and Ultrawide Band Gap Semiconductors: Materials and Devices)
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21 pages, 10338 KiB  
Article
Novel Series-Parallel Phase-Shifted Full-Bridge Converters with Auxiliary LC Networks to Achieve Wide Lagging-Leg ZVS Range
by Yunzhi Wang, Fei Sun, Jun Chen, Huafeng Cai and Shen Gao
Electronics 2024, 13(7), 1311; https://doi.org/10.3390/electronics13071311 - 31 Mar 2024
Viewed by 508
Abstract
Under light load conditions, the phase-shifted full-bridge (PSFB) converter often has difficulty in realizing the zero-voltage switching (ZVS) of the lagging-leg by relying on the energy of its resonant inductor; however, for the series-parallel PSFB converter applied in high-power applications, the lagging-leg still [...] Read more.
Under light load conditions, the phase-shifted full-bridge (PSFB) converter often has difficulty in realizing the zero-voltage switching (ZVS) of the lagging-leg by relying on the energy of its resonant inductor; however, for the series-parallel PSFB converter applied in high-power applications, the lagging-leg still has the problem of difficult realization of ZVS. Based on this, the paper analyzes the reasons why the series-parallel PSFB converter has difficulty in achieving ZVS for the lagging-leg under light and heavy loads. Under interleaved control, the ZVS of the lagging-leg over the full load range is realized by adding an auxiliary LC branch at the midpoint of the lagging-leg of both submodules. Based on the double-bridge input-parallel-output-series (IPOS) PSFB converter, analyzing the working principle of the circuit after adding the auxiliary LC branch and extending it to the series-parallel PSFB converter. The design requirements of the LC auxiliary branch of the dual-bridge series-parallel PSFB converter are given and the effects of the LC auxiliary branch on the module operating state and device stress are analyzed. On this basis, an extension is carried out to give the working principle and design method of the auxiliary LC branch of the N-bridge series-parallel PSFB converter. Finally, a 100 kW Matlab/Simulink simulation model verifies the superior performance of the proposed LC auxiliary branch to realize the lagging-leg ZVS of the series-parallel PSFB converter under light and heavy loads and achieves a 1.09% peak efficiency improvement at rated load. Full article
(This article belongs to the Special Issue Wide and Ultrawide Band Gap Semiconductors: Materials and Devices)
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