Wide and Ultrawide Band Gap Semiconductors: Materials and Devices

Dear Colleagues,

Wide- and ultrawide-bandgap semiconductors exhibit competitive advantages in developing next-generation power electronics, ultraviolet LEDs, photodetectors, and quantum devices. Featured by a bandgap larger than 3.2 eV, emerging wide- and ultrawide-bandgap semiconductors include oxides (Ga₂O₃ and ZnGa₂O₄), nitrides (GaN, AlGaN, and BN), carbide (SiC), and diamond. Exploring the full potential of these semiconductors requires the comprehensive study of material growth and structural characterization, doping control and defect analysis, and device design and application. Therefore, this Special Issue intends to present a themed collection related to the field of wide- and ultrawide-bandgap semiconductor devices.

We invite the submission of original research contributions and reviews in areas including, but not limited to, the homoepitaxy and heterojunction of wide- and ultrawide-bandgap semiconductors; metastable phase control and stabilization; quantum-well fabrication and characterization; the development of novel growth and characterization methods; theoretical calculations of the formation and activation of semiconductor defects; novel transport phenomena and defect characterization techniques; device simulation; power device applications, including diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs); ultraviolet LEDs and photodetectors; and quantum information devices.

Specific research areas may include (but are not limited to) the following:

• Epitaxy of wide- and ultrawide-bandgap semiconductors, including oxides (Ga₂O₃ and ZnGa₂O₄), nitrides (GaN, AlGaN, and BN), carbide (SiC), and diamond;
• Heterostructure design, phase control, and interface-driven phenomena;
• DFT calculations of defects in semiconductors;
• Carrier transport simulation and characterization methods;
• Power devices including diodes and MOSFETs;
• Ultraviolet LEDs and photodetectors.

Prof. Dr. Wenrui Zhang
Prof. Dr. Wei Guo
Guest Editors

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