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Electronics
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Advances in High-Power Diode Lasers
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Advances in High-Power Diode Lasers

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (31 March 2022) | Viewed by 3391

Special Issue Editor

Dr. Martin Hempel

E-Mail Website
Guest Editor
Department System Integration and Interconnection Technologies, Fraunhofer Institute for Reliability and Microintegration IZM, Berlin, Germany
Interests: diode lasers; failures induced by high optical powers; catastrophic optical damage; interconnection technologies; embedding

Special Issue Information

Dear Colleagues,

We are pleased to announce this Special Issue of the MDPI journal “Advances in High-Power Diode Lasers”. Generating high-power laser light has developed as a versatile tool for research and industry, and has reached even the consumer market. However, demand is still growing for higher power, specific wavelengths, higher efficiency and elevated beam quality.

Due to their high conversion efficiency and compactness, diode lasers are suitable for a wide range of applications. They are the main source of laser light, either for direct use or as pump sources for other systems. Therefore, research into laser materials, epitaxial growth, active region geometry, heat sink and interconnection technology, electronic control and power sources, optical interconnects, and applications of the laser light are of high interest. This Special Issue is dedicated to combining the expertise in this field and offering a picture of the state-of-the-art research.

Dr. Martin Hempel
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Defect mechanisms
  • GaN-based, GaAs-based
  • Catastrophic optical damage
  • Frequency tuning

Published Papers (1 paper)

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Review

13 pages, 2630 KiB  
Review
A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics
by Matteo Buffolo, Carlo De Santi, Justin Norman, Chen Shang, John Edward Bowers, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini
Electronics 2021, 10(22), 2734; https://doi.org/10.3390/electronics10222734 - 09 Nov 2021
Cited by 8 | Viewed by 2918
Abstract
With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, [...] Read more.
With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers. Full article
(This article belongs to the Special Issue Advances in High-Power Diode Lasers)
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