High-Performance RF Power Amplifiers: The Advancement of GaN, Si, and CMOS for Future Communications
A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".
Deadline for manuscript submissions: closed (15 June 2026) | Viewed by 2625
Editor
Interests: broadband; high power RF power amplifier; 5G and IOT RF system and parts development
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
The explosive growth of next-generation wireless communication systems, including 5G, 6G, and beyond, demands significant advancements in RF power amplifier (PA) technologies. Power amplifiers are critical components in RF front-end modules, directly impacting the performance, efficiency, and reliability of wireless transmitters. This Special Issue aims to explore state-of-the-art developments in high-performance RF power amplifiers using GaN, Si, and CMOS technologies.
Gallium nitride (GaN) devices are gaining increasing attention due to their superior power density, efficiency, and high-frequency capabilities, making them ideal for 5G base stations and emerging high-power applications. At the same time, silicon (Si) and CMOS-based RF PAs offer integration benefits and cost-effectiveness for consumer-level mobile and IoT applications. Recent efforts have focused on improving linearity, energy efficiency, and thermal management while operating at ever-increasing frequencies.
This Special Issue invites contributions related to novel PA architectures, linearization techniques, power-combining methods, broadband performance, thermal-aware design, and packaging innovations across GaN, Si, and CMOS platforms. We are especially interested in research that bridges theory and practice, including circuit-level modeling, EDA tool advancements, and real-world deployments. Whether targeting mmWave front-ends, energy-efficient transmitters, or low-cost PA modules for large-scale integration, this Issue serves as a platform for the discussion of cutting-edge solutions in PA design with an eye to future communication systems.
- GaN-based high-efficiency RF power amplifiers;
- CMOS RF PA designs for mobile and IoT applications;
- Thermal management techniques for high-power PAs;
- Broadband and multiband PA architectures;
- Linearity enhancement and digital pre-distortion;
- Doherty, outphasing, and envelope tracking techniques;
- Power-combining and load modulation networks;
- Integration of PAs with antenna arrays in RF modules;
- PA reliability, packaging, and EMI considerations;
- Emerging PA solutions for 5G, 6G, and beyond.
While the topics listed should provide a general guideline, we also welcome submissions that explore other emerging concepts, unconventional design approaches, or technologies related to RF power amplifiers. The submission of innovative research that challenges the current boundaries of PA design is particularly encouraged.
Join us in advancing RF power amplifier research with your impactful contributions.
I look forward to receiving your contributions.
Dr. Jihoon Kim
Guest Editor
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Keywords
- GaN power amplifier
- CMOS RF circuit
- high-efficiency PA
- linearity
- mmWave PA
- thermal-aware design
- 5G
- 6G
- wireless transmitters
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