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Electronics
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Quantum and Optoelectronic Devices, Circuits and Systems, 2nd Edition
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Quantum and Optoelectronic Devices, Circuits and Systems, 2nd Edition

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Optoelectronics".

Deadline for manuscript submissions: closed (31 December 2024) | Viewed by 5678

Special Issue Editor

Dr. Andrea Delgado

E-Mail Website
Guest Editor
Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA
Interests: quantum computing; quantum machine learning; high-energy physics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

The fields of quantum electronics (e.g., quantum dots) as well as optoelectronics have produced much interest in the past few years. They deal with quantum and optical platforms in combination with electronic and condensed matter systems, which may serve as building blocks for a plethora of applications in quantum computing and optical technology.

Following the successful edition of the Special Issue "Quantum and Optoelectronic Devices, Circuits and Systems" in 2022 in Electronics, we are pleased to announce the second edition, devoted to the dissemination of high-quality research on the topics of quantum electronics and optoelectronics. Areas considered, but not exclusively, are quantum electronics, optoelectronics, quantum optics, quantum dots, superconducting circuits, and integrated quantum photonics. Both theoretical contributions, as well as experimental implementations, will be published. Connections to emerging topics such as machine learning and artificial intelligence for designing and controlling physical devices are also valued. Original articles, as well as reviews on specific fields, are welcome.

The topic of quantum electronics is timely, as evidenced by the Nobel Prize in Chemistry 2023 for the inventors of the quantum dot. We therefore expect this Special Issue to be a compilation of high-quality articles on these topics, which may contribute to the dissemination of relevant scientific research in this field.

Dr. Andrea Delgado
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • quantum electronics
  • optoelectronics
  • quantum optics
  • superconducting circuits
  • quantum dots
  • integrated quantum photonics

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Related Special Issue

Published Papers (3 papers)

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Research

18 pages, 6561 KiB  
Article
Magnetic and Temperature Effects on Optical Quantum Transition Line Properties in Electron-Piezoelectric Phonon Coupled Materials Under Square Well Confinement Potential
by Su-Ho Lee and Herie Park
Electronics 2025, 14(7), 1256; https://doi.org/10.3390/electronics14071256 - 22 Mar 2025
Viewed by 155
Abstract
Despite extensive research on semiconductor materials, the influence of temperature and magnetic field on the optical quantum transitions within semiconductors remains insufficiently understood. We therefore investigated the Optical Quantum Transition Line Properties (OQTLP), including line shapes (LS) and line widths (LW), as functions [...] Read more.
Despite extensive research on semiconductor materials, the influence of temperature and magnetic field on the optical quantum transitions within semiconductors remains insufficiently understood. We therefore investigated the Optical Quantum Transition Line Properties (OQTLP), including line shapes (LS) and line widths (LW), as functions of temperature and magnetic field in electron–piezoelectric-phonon-interacting systems within semiconductor materials. A theoretical framework incorporating projection-based equations and equilibrium average projection was applied to GaAs and CdS. Similarly, LW generally increases with magnetic field in a square-well confinement potential across most temperature regions. However, in high magnetic fields at low temperatures, LW decreases for GaAs. Additionally, LW increases with rising temperature. We also compare the LW and LS for transitions within intra- and inter-Landau levels to analyze the quantum transition process. The results indicate that intra-Landau level transitions primarily dominate the temperature dependence of quantum transitions in GaAs and CdS. Full article
(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems, 2nd Edition)
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12 pages, 1819 KiB  
Article
Tunneling Current in a Double Quantum Dot Driven by Two-Mode Microwave Photons
by Weici Liu and Faqiang Wang
Electronics 2025, 14(3), 599; https://doi.org/10.3390/electronics14030599 - 3 Feb 2025
Viewed by 681
Abstract
In this study, a model of a double-quantum-dot system driven by two-mode microwave photons is presented. The quantum master equation is derived from the system’s Hamiltonians, and the expression for the steady-state current is obtained. Electronic tunneling properties are then analyzed. The results [...] Read more.
In this study, a model of a double-quantum-dot system driven by two-mode microwave photons is presented. The quantum master equation is derived from the system’s Hamiltonians, and the expression for the steady-state current is obtained. Electronic tunneling properties are then analyzed. The results revealed that different two-mode quantum microwave photons have varying effects on the tunneling current within the double-quantum-dot system, with a steplike current trend emerging. The tunneling current showed pronounced negative differential conductance for both coherent and squeezed microwave photons. Furthermore, the tunneling current was significantly influenced by changing the squeezing coefficient and phase. The asymmetric evolution of the tunneling current under varying bias voltages also depends on the asymmetry in system parameters. These findings are crucial for manipulating the transport properties of double-quantum-dot systems in nanostructured devices. Full article
(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems, 2nd Edition)
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26 pages, 7925 KiB  
Article
Cryo-CMOS Multi-Frequency Modulator for 2-Qubit Controller
by Alessandro Badiali and Mattia Borgarino
Electronics 2024, 13(13), 2546; https://doi.org/10.3390/electronics13132546 - 28 Jun 2024
Cited by 3 | Viewed by 4269
Abstract
This paper addresses the design of a CMOS modulator to control two quantum bits. The proposed architecture offers several advantages that are addressed and discussed in this paper. The proposed architecture is investigated through both mathematical modeling and Verilog simulations. Moreover, the circuit [...] Read more.
This paper addresses the design of a CMOS modulator to control two quantum bits. The proposed architecture offers several advantages that are addressed and discussed in this paper. The proposed architecture is investigated through both mathematical modeling and Verilog simulations. Moreover, the circuit was designed using the cryogenic Design Kit of the 130 nm SiGe BiCMOS technology of the IHP foundry. The observed agreement between the modeling, Verilog, and transistor-level simulations proves the physical feasibility of the proposed architecture. Full article
(This article belongs to the Special Issue Quantum and Optoelectronic Devices, Circuits and Systems, 2nd Edition)
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