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Electronics
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Recent Progress of RF and Millimeter-Wave Systems Applications for Next-Generation...
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Recent Progress of RF and Millimeter-Wave Systems Applications for Next-Generation Communications

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (15 December 2024) | Viewed by 1769

Special Issue Editor

Dr. Jihoon Kim

E-Mail Website
Guest Editor
School of Electronic Engineering, Kyonggi University, Suwon-si, Republic of Korea
Interests: broadband; high power RF power amplifier; 5G and IOT RF system and parts development
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Research in RF and millimeter-wave systems for next-generation communications encompasses a broad spectrum of investigations, with significant focus directed towards circuit design and antenna technologies. Circuitry innovations aim to revolutionize RF and millimeter-wave systems by exploring advanced architectures tailored to these applications. The challenges inherent in high-frequency circuit design are addressed through novel techniques, ensuring efficient operation within these frequency bands.

Concurrently, antenna research is flourishing, particularly in the realm of wideband designs essential for accommodating the bandwidth requirements of emerging communication standards. The extensive exploration of beamforming and MIMO techniques promises enhanced performance and capacity of antenna systems, which are vital for advancing communication capabilities. Metamaterial applications in antenna design offer unconventional functionalities and improved performance attributes, further enriching the antenna technology landscape.

Antenna arrays, pivotal for 5G and future networks, undergo meticulous optimization to meet stringent performance criteria. Microwave integrated circuits (MICs) play a crucial role in millimeter-wave systems, with research endeavors aimed at refining their design and fabrication processes to align with evolving communication needs.

Both circuit and antenna research prioritize energy efficiency and adaptability, which are crucial for communication device sustainability. Innovations in low-power circuitry extend battery life, while reconfigurable antenna systems dynamically adjust parameters to optimize performance across diverse communication environments. These interdisciplinary efforts underscore the multifaceted approach required to advance RF and millimeter-wave systems, facilitating the realization of next-generation communication technologies.

We welcome papers that address the above research topics to participate in this Special Issue., and also invite diverse submissions to our journal's Special Issue, encompassing all facets of communication technology and theory. From network protocols to wireless networking, we welcome contributions spanning the breadth of the field. Share your research on emerging technologies and theoretical advancements, and join us in advancing communication research with your impactful contributions.

Topics

  1. Advanced circuit design techniques for RF and millimeter-wave systems;
  2. RF and millimeter-wave technologies in 5G NR;
  3. High-frequency circuit design challenges and solutions;
  4. Wideband antenna designs for next-generation communication systems;
  5. Beamforming and MIMO techniques in antenna design;
  6. Metamaterial-based antenna technologies;
  7. Monolithic microwave integrated circuits (MMICs) for millimeter-wave systems;
  8. Antenna arrays for 5G and beyond;
  9. Low-power circuit design for energy-efficient communication devices;
  10. RF and millimeter-wave communications for autonomous vehicles connectivity;

Dr. Jihoon Kim
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • RF systems
  • millimeter-wave technology
  • circuit design
  • antenna innovations
  • beamforming
  • energy efficiency
  • 5G
  • 6G
  • beyond 6G

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

11 pages, 2752 KiB  
Article
Compact Dual-Band Rectifier with Self-Matched Branches Using Comprehensive Impedance Control
by Adel Barakat, Willy Jordan and Ramesh K. Pokharel
Electronics 2025, 14(5), 933; https://doi.org/10.3390/electronics14050933 - 26 Feb 2025
Viewed by 436
Abstract
The use of multi-band matching for rectifiers leads to design complexity. Instead, recent advancements suggested self-matched branches combined in parallel to enable multi-band operation. However, this method controls only the imaginary part. In this paper, we propose an efficient dual-band rectifier with compact [...] Read more.
The use of multi-band matching for rectifiers leads to design complexity. Instead, recent advancements suggested self-matched branches combined in parallel to enable multi-band operation. However, this method controls only the imaginary part. In this paper, we propose an efficient dual-band rectifier with compact realization. The rectifier consists of two self-matched parallel branches. Each branch provides comprehensive impedance control over real and imaginary parts in the corresponding band independent of the design frequency. The branch impedance matching is analyzed theoretically, and design equations are presented. To verify the proposed theory, a compact dual-band rectifier was fabricated with a compact area of only 0.42 cm2 after excluding the area required for the RF connector. The measured RF-DC power conversion efficiency (PCE) was >50% for input power (Pin) ranging from −5.5 dBm to 11 dBm at 390 MHz with a peak of 69%. Also, the PCE was >50% for P_in ranging from −4 dBm to 12 dBm at 690 MHz with a peak of 68%. The fabricated rectifier operates with a wide load range from 0.5 KΩ to 3 KΩ with PCE > 50% at both bands when P_in = 5 dBm. Full article
(This article belongs to the Special Issue Recent Progress of RF and Millimeter-Wave Systems Applications for Next-Generation Communications)
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15 pages, 14100 KiB  
Article
Triple-Stacked FET Distributed Power Amplifier Using 28 nm CMOS Process
by Jihoon Kim and Youngje Sung
Electronics 2024, 13(22), 4433; https://doi.org/10.3390/electronics13224433 - 12 Nov 2024
Cited by 1 | Viewed by 1021
Abstract
A broadband 28 nm complementary metal–oxide–semiconductor (CMOS) power amplifier was implemented using a distributed amplification design. To develop a model library for high-frequency design, various test patterns for active and passive elements were fabricated and compared through measurements. As a result, a symmetrical [...] Read more.
A broadband 28 nm complementary metal–oxide–semiconductor (CMOS) power amplifier was implemented using a distributed amplification design. To develop a model library for high-frequency design, various test patterns for active and passive elements were fabricated and compared through measurements. As a result, a symmetrical n-channel field-effect transistor (NFET) was used as the active device, and a co-planar waveguide (CPW) with floating bottom metal layers was chosen as the transmission line for the passive element. These choices demonstrated superior radio frequency (RF) characteristics at high frequencies compared to other device candidates. Furthermore, to address the low breakdown voltage of CMOS, a triple-stacked FET structure was designed as the gain cell of the distributed power amplifier (DPA). The fabricated DPA showed a maximum small-signal gain of 22 dB and a minimum of 10 dB from DC to 56 GHz, with a maximum saturated output power of 20 dBm and a minimum of 13 dBm from 1 to 39 GHz. Notably, these results were achieved on the first attempt by designing solely based on measurement data from the test patterns. Full article
(This article belongs to the Special Issue Recent Progress of RF and Millimeter-Wave Systems Applications for Next-Generation Communications)
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