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Two-Dimensional Electronics and Optoelectronics: Present and Future

by

Zhixian Zhou

and

Yoke Khin Yap

Electronics 2017, 6(3), 53; https://doi.org/10.3390/electronics6030053 - 22 Jul 2017

Cited by 5 | Viewed by 4570

Abstract

Since the successful isolation of graphene a little over a decade ago, a wide variety of two-dimensional (2D) layered materials have been studied.[...] Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessFeature PaperArticle

High Throughput Characterization of Epitaxially Grown Single-Layer MoS₂

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Andres Castellanos-Gomez

Electronics 2017, 6(2), 28; https://doi.org/10.3390/electronics6020028 - 31 Mar 2017

Cited by 17 | Viewed by 6678

Abstract

The growth of single-layer MoS₂ with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS₂ crystallites grown on a [...] Read more.

The growth of single-layer MoS₂ with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS₂ crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 µm² and 60 µm². Differential reflectance measurements performed on these crystallites show that the area of the MoS₂ crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS₂. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large-area chemical vapor deposition (CVD)-grown samples. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessArticle

Atomic Layer Growth of InSe and Sb₂Se₃ Layered Semiconductors and Their Heterostructure

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and

Electronics 2017, 6(2), 27; https://doi.org/10.3390/electronics6020027 - 30 Mar 2017

Cited by 29 | Viewed by 7677

Abstract

Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb₂Se₃ can [...] Read more.

Metal chalcogenides based on the C–M–M–C (C = chalcogen, M = metal) structure possess several attractive properties that can be utilized in both electrical and optical devices. We have shown that specular, large area films of γ-InSe and Sb₂Se₃ can be grown via atomic layer deposition (ALD) at relatively low temperatures. Optical (absorption, Raman), crystalline (X-ray diffraction), and composition (XPS) properties of these films have been measured and compared to those reported for exfoliated films and have been found to be similar. Heterostructures composed of a layer of γ-InSe (intrinsically n-type) followed by a layer of Sb₂Se₃ (intrinsically p-type) that display diode characteristics were also grown. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessArticle

Energetic Stabilities, Structural and Electronic Properties of Monolayer Graphene Doped with Boron and Nitrogen Atoms

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Electronics 2016, 5(4), 91; https://doi.org/10.3390/electronics5040091 - 14 Dec 2016

Cited by 15 | Viewed by 5916

Abstract

The structural, energetic, and electronic properties of single-layer graphene doped with boron and nitrogen atoms with varying doping concentrations and configurations have been investigated here via first-principles density functional theory calculations. It was found that the band gap increases with an increase in [...] Read more.

The structural, energetic, and electronic properties of single-layer graphene doped with boron and nitrogen atoms with varying doping concentrations and configurations have been investigated here via first-principles density functional theory calculations. It was found that the band gap increases with an increase in doping concentration, whereas the energetic stability of the doped systems decreases with an increase in doping concentration. It was observed that both the band gaps and the cohesive energies also depend on the atomic configurations considered for the substitutional dopants. Stability was found to be higher in N-doped graphene systems as compared to B-doped graphene systems. The electronic structures of B- and N-doped graphene systems were also found to be strongly influenced by the positioning of the dopant atoms in the graphene lattice. The systems with dopant atoms at alternate sublattices have been found to have the lowest cohesive energies and therefore form the most stable structures. These results indicate an ability to adjust the band gap as required using B and N atoms according to the choice of the supercell, i.e., the doping density and substitutional dopant sites, which could be useful in the design of graphene-based electronic and optical devices. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessArticle

Guided Modes in a Double-Well Asymmetric Potential of a Graphene Waveguide

by

Yi Xu

and

Lay Kee Ang

Electronics 2016, 5(4), 87; https://doi.org/10.3390/electronics5040087 - 07 Dec 2016

Cited by 5 | Viewed by 5040

Abstract

The analogy between the electron wave nature in graphene electronics and the electromagnetic waves in dielectrics has suggested a series of optical-like phenomena, which is of great importance for graphene-based electronic devices. In this paper, we propose an asymmetric double-well potential on graphene [...] Read more.

The analogy between the electron wave nature in graphene electronics and the electromagnetic waves in dielectrics has suggested a series of optical-like phenomena, which is of great importance for graphene-based electronic devices. In this paper, we propose an asymmetric double-well potential on graphene as an electronic waveguide to confine the graphene electrons. The guided modes in this graphene waveguide are investigated using a modified transfer matrix method. It is found that there are two types of guided modes. The first kind is confined in one well, which is similar to the asymmetric quantum well graphene waveguide. The second kind can appear in two potential wells with double-degeneracy. Characteristics of all the possible guide modes are presented. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessArticle

Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

by

Francesco Dell’Olio

,

Michele Palmitessa

and

Caterina Ciminelli

Electronics 2016, 5(4), 73; https://doi.org/10.3390/electronics5040073 - 26 Oct 2016

Cited by 8 | Viewed by 6202

Abstract

A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The [...] Read more.

A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Review

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Open AccessFeature PaperReview

Recent Advances in Electronic and Optoelectronic Devices Based on Two-Dimensional Transition Metal Dichalcogenides

by

Mingxiao Ye

,

Dongyan Zhang

and

Yoke Khin Yap

Electronics 2017, 6(2), 43; https://doi.org/10.3390/electronics6020043 - 02 Jun 2017

Cited by 64 | Viewed by 14638

Abstract

Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and [...] Read more.

Two-dimensional transition metal dichalcogenides (2D TMDCs) offer several attractive features for use in next-generation electronic and optoelectronic devices. Device applications of TMDCs have gained much research interest, and significant advancement has been recorded. In this review, the overall research advancement in electronic and optoelectronic devices based on TMDCs are summarized and discussed. In particular, we focus on evaluating field effect transistors (FETs), photovoltaic cells, light-emitting diodes (LEDs), photodetectors, lasers, and integrated circuits (ICs) using TMDCs. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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Open AccessReview

Photonic Structure-Integrated Two-Dimensional Material Optoelectronics

by

Tianjiao Wang

and

Ya-Qiong Xu

Electronics 2016, 5(4), 93; https://doi.org/10.3390/electronics5040093 - 20 Dec 2016

Cited by 16 | Viewed by 7894

Abstract

The rapid development and unique properties of two-dimensional (2D) materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form [...] Read more.

The rapid development and unique properties of two-dimensional (2D) materials, such as graphene, phosphorene and transition metal dichalcogenides enable them to become intriguing candidates for future optoelectronic applications. To maximize the potential of 2D material-based optoelectronics, various photonic structures are integrated to form photonic structure/2D material hybrid systems so that the device performance can be manipulated in controllable ways. Here, we first introduce the photocurrent-generation mechanisms of 2D material-based optoelectronics and their performance. We then offer an overview and evaluation of the state-of-the-art of hybrid systems, where 2D material optoelectronics are integrated with photonic structures, especially plasmonic nanostructures, photonic waveguides and crystals. By combining with those photonic structures, the performance of 2D material optoelectronics can be further enhanced, and on the other side, a high-performance modulator can be achieved by electrostatically tuning 2D materials. Finally, 2D material-based photodetector can also become an efficient probe to learn the light-matter interactions of photonic structures. Those hybrid systems combine the advantages of 2D materials and photonic structures, providing further capacity for high-performance optoelectronics. Full article

(This article belongs to the Special Issue Two-Dimensional Electronics and Optoelectronics)

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