From RF to THz: The Analysis and Design of Integrated Passive Devices and Antennas

Dear Colleagues,

The frontier of electronics is rapidly advancing towards higher frequencies, with millimeter-wave (mmWave) and terahertz (THz) technologies standing at the forefront of next-generation breakthroughs. These technologies are pivotal for a wide range of applications, including high-speed wireless communications, sensing, and imaging systems. Concurrently, the increasing complexity of electronic systems demands innovative approaches to integration and packaging, pushing the limits of conventional circuit design and fabrication methodologies.

The development of high-performance passive and active components—such as filters, antennas, mixers, and power amplifiers—is crucial for building efficient systems at these frequencies. Innovations in compound semiconductor devices are enabling unprecedented levels of output power and modulation speed, which are essential for practical applications in testing instrumentation and communication systems. Furthermore, the adoption of novel fabrication and packaging processes, such as Integrated Substrate-Layer (ISL) platforms, Through-Glass-Via (TGV), and Through-Silicon-Via (TSV) technologies, is opening new pathways for creating highly compact, heterogeneously integrated systems with superior performance.

To highlight the latest progress and foster discussion on these critical areas, we have organized this Special Issue, titled "From RF to THz: The Analysis and Design of Integrated Passive Devices and Antennas". This Special Issue aims to explore cutting-edge research on device design, the application of novel processes, and system-level integration techniques that are driving the field forward. We call for papers to provide a platform for researchers, engineers, and industry professionals to share their findings and exchange valuable insights.

Authors are invited to submit original research and review articles on theoretical and practical advancements. Topics of interest for submission include, but are not limited to, the following:

• Design and synthesis of mmWave and THz passive circuits (filters, amplifiers, antennas, matching networks, etc.);
• Device design based on advanced technologies (Substrate Integrated Suspended Line (SISL), Substrate Integrated Waveguide (SIW), and Gap Waveguide);
• Advanced packaging technologies for high-frequency circuits (MISL, HISL, TGV, and TSV);
• Compound semiconductor-based solid-state devices and modules;
• High-power THz sources and high-speed modulators;
• THz chips for instrumentation, communication, and imaging;
• mmWave and THz front-end system design (including LNAs, mixers, and multipliers);
• Filtering antenna (filtenna) and co-designed filtering components;
• System-in-Package (SiP) and 3D integration for RF systems;
• Novel materials and their application in high-frequency electronics;
• Device and circuit characterization and modeling for extreme environments.

Dr. Yi Wu
Prof. Dr. Shixiong Liang
Dr. Yang Yu
Guest Editors

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