- Article
Heterojunction Devices Fabricated from Sprayed n-Type Ga2O3, Combined with Sputtered p-Type NiO and Cu2O
- Theodoros Dimopoulos,
- Rachmat Adhi Wibowo,
- Stefan Edinger,
- Maximilian Wolf and
- Thomas Fix
This work reports on the properties of heterojunctions consisting of n-type Ga2O3 layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu2O counterparts, deposited by radio fre...

