- Article
Selective Area Growth and Structural Characterization of GaN Nanostructures on Si(111) Substrates
- Alexana Roshko,
- Matt Brubaker,
- Paul Blanchard,
- Todd Harvey and
- Kris A. Bertness
Selective area growth (SAG) of GaN nanowires and nanowalls on Si(111) substrates with AlN and GaN buffer layers grown by plasma-assisted molecular beam epitaxy was studied. For N-polar samples filling of SAG features increased with decreasing lattice...

