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Crystals 2018, 8(9), 350;

A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package

Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
Department of Electro-Optical Engineering & Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
Author to whom correspondence should be addressed.
Received: 14 July 2018 / Revised: 9 August 2018 / Accepted: 28 August 2018 / Published: 31 August 2018
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In this study, the small-size and side-view LED packages used in the backlight modules were examined by performing the electrostatic discharge (ESD) process. The high voltages used for the ESD process were 2 kV, 3 kV, and 4 kV. After ESD, the current–voltage curves were scanned from −7 V to 3 V. It was found that the significant leakage currents were in the reverse bias of 4 V~7 V and also in the forward bias of 1 V~2.5 V for ESD-damaged LED chips. However, the phenomenon of a slight increase in current was not found for the non-damaged samples. In our study case, the screening conditions could be set at a bias of −7 V or 2.3 V and the current of 0.1 µA. View Full-Text
Keywords: ESD; side view LED package ESD; side view LED package

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Chen, W.-R.; Luo, Y.-S. A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package. Crystals 2018, 8, 350.

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