Growth and Evaluation of Multicrystalline Silicon

Dear Colleagues,

Multicrystalline silicon (mc-Si) is widely used for substrates of solar cells. It is well understood that there is an advantage in the production cost in a mc-Si ingot in comparison to a single crystal Si, although the quality of mc-Si ingot should be improved further.  

To realize a high energy conversion efficiency of mc-Si solar cells, the development of crystal growth technology is required. Furthermore, the fundamental understanding of crystal growth mechanism of mc-Si, mechanism of  defects formation, and evaluation of mc-Si wafers are crucial.

We invite investigators to submit papers which discuss the development of high quality multicrystalline Si for solar cells, including bulk ingots and thin films.

The potential topics include:

• Crystal growth of mc-Si ingot
• Crystal growth of mc-Si thin films
• Crystal growth mechanisms of mc-Si
• Defects formation and their property in mc-Si
• Evaluation of mc-Si wafers
• Property of solar cells based on mc-Si
• Crystal growth of new materials based on Si

Prof. Dr. Kozo Fujiwara
Prof. Dr. Chung-wen Lan
Prof. Dr. Koichi Kakimoto
Guest Editor

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