- Article
Annealing-Induced Changes in the Nature of Point Defects in Sublimation-Grown Cubic Silicon Carbide
- Michael Schöler,
- Clemens Brecht and
- Peter J. Wellmann
In recent years, cubic silicon carbide (3C-SiC) has gained increasing interest as semiconductor material for energy saving and optoelectronic applications, such as intermediate-band solar cells, photoelectrochemical water splitting, and quantum key d...

