16 Results Found

Scanning tunneling spectroscopy in ultrahigh vacuum conditions and conductive atomic-force microscopy in ambient conditions were used to study local electroresistive properties of ferroelectric tunnel junctions SrTiO3/La0.7Sr0.3MnO3/BaTiO3. Interesti...

Computing systems are becoming more and more power-constrained due to unconventional computing requirements like computing on the edge, in-sensor, or simply an insufficient battery. Emerging Non-Volatile Memories are explored to build low-power compu...

The success of a ferroelectric tunnel junction (FTJ) depends on the asymmetry of electron tunneling as given by the tunneling electroresistance (TER) effect. This characteristic is mainly assessed considering three transport mechanisms: direct tunnel...

CuInP2S6 (CIPS) is a novel two-dimensional (2D) van der Waals (vdW) ferroelectric layered material with a Curie temperature of TC~315 K, making it promising for great potential applications in electronic and photoelectric devices. Herein, the ferroel...

Ferroelectric tunnel junctions (FTJs) have attracted attention as devices for advanced memory applications owing to their high operating speed, low operating energy, and excellent scalability. In particular, hafnia ferroelectric materials are very pr...

A transient chaotic neural network (TCNN) is particularly useful for solving combinatorial optimization problems, and its hardware implementation based on memristors has attracted great attention recently. Although previously used filamentary memrist...

Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip’s dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constr...

Owing to the 4th Industrial Revolution, the amount of unstructured data, such as voice and video data, is rapidly increasing. Brain-inspired neuromorphic computing is a new computing method that can efficiently and parallelly process rapidly increasi...

The continuous advancement of Artificial Intelligence (AI) technology depends on the efficient processing of unstructured data, encompassing text, speech, and video. Traditional serial computing systems based on the von Neumann architecture, employed...

The development of the new generation of non-volatile high-density ferroelectric memory requires the utilization of ultrathin ferroelectric films. The most promising candidates are polycrystalline-doped HfO2 films because of their perfect compatibili...

Recently, considerable attention has been paid to the development of advanced technologies such as artificial intelligence (AI) and big data, and high-density, high-speed storage devices are being extensively studied to realize the technology. Ferroe...

The discovery of ferroelectricity in HfO2 thin film, which is compatible with the CMOS process, has revived interest in ferroelectric memory devices. HfO2 has been found to exhibit high ferroelectricity at a few nanometers thickness, and studies have...

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelect...

Electric-field control of magnetism is significant for the next generation of large-capacity and low-power data storage technology. In this regard, the renaissance of a multiferroic compound provides an elegant platform owing to the coexistence and c...

Ferroelectric (FE) Hf1−xZrxO2 is a potential candidate for emerging memory in artificial intelligence (AI) and neuromorphic computation due to its non-volatility for data storage with natural bi-stable characteristics. This study experimentally chara...

A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric layer and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a magnetic tunnel...