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Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials

1
National Institute for Research and Development in Microtechnologies (IMT Bucharest), Erou Iancu Nicolae Street 126A, 077190 Voluntari, Romania
2
Physics Faculty, University of Bucharest, P.O. Box MG-11, 077125 Bucharest, Romania
3
Academy of Romanian Scientists, Splaiul Independentei 54, 050094 Bucharest, Romania
*
Author to whom correspondence should be addressed.
Academic Editors: Marco Fanciulli, Sam Lofland and Goran Drazic
Nanomaterials 2021, 11(3), 625; https://doi.org/10.3390/nano11030625
Received: 6 January 2021 / Revised: 15 February 2021 / Accepted: 26 February 2021 / Published: 3 March 2021
(This article belongs to the Special Issue 2D Materials for Nanoelectronics)
Nanomaterials science is becoming the foundation stone of high-frequency applications. The downscaling of electronic devices and components allows shrinking chip’s dimensions at a more-than-Moore rate. Many theoretical limits and manufacturing constraints are yet to be taken into account. A promising path towards nanoelectronics is represented by atomic-scale materials. In this manuscript, we offer a perspective on a specific class of devices, namely switches designed and fabricated using two-dimensional or nanoscale materials, like graphene, molybdenum disulphide, hexagonal boron nitride and ultra-thin oxides for high-frequency applications. An overview is provided about three main types of microwave and millimeter-wave switch: filament memristors, nano-ionic memristors and ferroelectric junctions. The physical principles that govern each switch are presented, together with advantages and disadvantages. In the last part we focus on zirconium-doped hafnium oxide ferroelectrics (HfZrO) tunneling junctions (FTJ), which are likely to boost the research in the domain of atomic-scale materials applied in engineering sciences. Thanks to their Complementary Metal-Oxide Semiconductor (CMOS) compatibility and low-voltage tunability (among other unique physical properties), HfZrO compounds have the potential for large-scale applicability. As a practical case of study, we present a 10 GHz transceiver in which the switches are FTJs, which guarantee excellent isolation and ultra-fast switching time. View Full-Text
Keywords: microwaves; millimetre-waves; switches; memristor; ferroelectric; tunneling junction microwaves; millimetre-waves; switches; memristor; ferroelectric; tunneling junction
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MDPI and ACS Style

Dragoman, M.; Aldrigo, M.; Dragoman, D. Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials. Nanomaterials 2021, 11, 625. https://doi.org/10.3390/nano11030625

AMA Style

Dragoman M, Aldrigo M, Dragoman D. Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials. Nanomaterials. 2021; 11(3):625. https://doi.org/10.3390/nano11030625

Chicago/Turabian Style

Dragoman, Mircea; Aldrigo, Martino; Dragoman, Daniela. 2021. "Perspectives on Atomic-Scale Switches for High-Frequency Applications Based on Nanomaterials" Nanomaterials 11, no. 3: 625. https://doi.org/10.3390/nano11030625

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