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  • Article
  • Open Access
16 Citations
6,831 Views
10 Pages
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Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate

  • Guangyang Lin,
  • Ningli Chen,
  • Lu Zhang,
  • Zhiwei Huang and ,
  • Wei Huang,
  • Jianyuan Wang,
  • Jianfang Xu,
  • Songyan Chen and
  • Cheng Li
  • + 4 authors+ 0 author
Materials2016, 9(10), 803;https://doi.org/10.3390/ma9100803

27 September 2016

Direct band electroluminescence (EL) from tensile-strained Si0.13Ge0.87/Ge multiple quantum wells (MQWs) on a Ge virtual substrate (VS) at room temperature is reported herein. Due to the competitive result of quantum confinement Stark effect and band...

(This article belongs to the Special Issue Silicon Nanophotonics)
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  • Review
  • Open Access
39 Citations
11,499 Views
18 Pages
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Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

  • Papichaya Chaisakul,
  • Vladyslav Vakarin,
  • Jacopo Frigerio,
  • Daniel Chrastina and ,
  • Giovanni Isella,
  • Laurent Vivien and
  • Delphine Marris-Morini
  • + 2 authors+ 0 author
Photonics2019, 6(1), 24;https://doi.org/10.3390/photonics6010024

1 March 2019

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorpo...

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