Search Results (784)

Textured Si₃N₄/BN composite ceramics were successfully fabricated using two-step sintering, combining pseudo-hot isostatic pressing (PHIP) and gas pressure sintering. The grain size of h-BN platelets had a significant influence on densification and mechanical and thermal properties. With an increase in h-BN grain size, the volume density of the composite ceramics gradually decreased, while flexural strength gradually increased. Meanwhile, larger h-BN platelets were more likely to trigger toughening mechanisms like large-angle deflection and greatly increase fracture toughness. Through proper selection of h-BN grain size, textured ceramics, with the addition of h-BN platelets of 1–2 μm, showed high thermal conductivity (∼92 W∙m⁻¹∙K⁻¹) and reliable mechanical properties (∼540 MPa, ∼7.5 MPa∙m^1/2, ∼11.1 GPa). Therefore, texture control is an effective means of improving the overall performance of ceramic materials. Novel textured composite ceramics thus have great potential in large-scale fabrication and directional heat dissipation applications. Full article

With their superior switching speed, GaN high-electron-mobility transistors (HEMTs) enable high power density, reduce energy losses, and increase power efficiency in a wide range of applications, such as power electronics, due to their high breakdown voltage. GaN-HEMT devices are subject to long-term reliability due to the self-heating effect and lattice mismatch between the SiC substrate and the GaN. Depletion-mode GaN HEMTs are utilized for radio frequency applications, and this work investigates three wide-bandgap (WBG) GaN HEMT fixed-frequency oscillators with output buffers. The first GaN-on-SiC HEMT oscillator consists of an HEMT amplifier with an LC feedback network. With the supply voltage of 0.8 V, the single-ended GaN oscillator can generate a signal at 8.85 GHz, and it also supplies output power of 2.4 dBm with a buffer supply of 3.0 V. At 1 MHz frequency offset from the carrier, the phase noise is −124.8 dBc/Hz, and the figure of merit (FOM) of the oscillator is −199.8 dBc/Hz. After the previous study, the hot-carrier stressed RF performance of the GaN oscillator is studied, and the oscillator was subject to a drain supply of 8 V for a stressing step time equal to 30 min and measured at the supply voltage of 0.8 V after the step operation for performance benchmark. Stress study indicates the power oscillator with buffer is a good structure for a reliable structure by operating the oscillator core at low supply and the buffer at high supply. The second balanced oscillator can generate a differential signal. The feedback filter consists of a left-handed transmission-line LC network by cascading three unit cells. At a 1 MHz frequency offset from the carrier of 3.818 GHz, the phase noise is −131.73 dBc/Hz, and the FOM of the 2nd oscillator is −188.4 dBc/Hz. High supply voltage operation shows phase noise degradation. The third GaN cross-coupled VCO uses 8-shaped inductors. The VCO uses a pair of drain inductors to improve the Q-factor of the LC tank, and it uses 8-shaped inductors for magnetic coupling noise suppression. At the VCO-core supply of 1.3 V and high buffer supply, the FOM at 6.397 GHz is −190.09 dBc/Hz. This work enhances the design techniques for reliable GaN HEMT oscillators and knowledge to design high-performance circuits. Full article

In wet flue gas desulfurization and denitrification processes, nitrite accumulation inhibits denitrification efficiency and induces secondary pollution due to its acidic disproportionation. This study developed a Mn-modified ZSM-5 zeolite catalyst, achieving efficient resource conversion of nitrite in nitrogen-containing wastewater through an O₃ + Mn/ZSM-5 catalytic system. Mn/ZSM-5 catalysts with varying SiO₂/Al₂O₃ ratios (prepared by wet impregnation) were characterized by BET, XRD, and XPS. Experimental results demonstrated that Mn/ZSM-5 (SiO₂/Al₂O₃ = 400) exhibited a larger specific surface area, enhanced adsorption capacity, abundant surface Mn³⁺/Mn⁴⁺ species, hydroxyl oxygen species, and chemisorbed oxygen, leading to superior oxidation capability and catalytic activity. Under the optimized conditions of reaction temperature = 40 °C, initial pH = 4, Mn/ZSM-5 dosage = 1 g/L, and O₃ concentration = 100 ppm, the $\mathrm{N}{\mathrm{O}}_2^{-}$ oxidation efficiency reached 94.33%. Repeated tests confirmed that the Mn/ZSM-5 catalyst exhibited excellent stability and wide operational adaptability. The synergistic effect between Mn species and the zeolite support significantly improved ozone utilization efficiency. The O₃ + Mn/ZSM-5 system required less ozone while maintaining high oxidation efficiency, demonstrating better cost-effectiveness. Mechanism studies revealed that the conversion pathway of $\mathrm{N}{\mathrm{O}}_2^{-}$ followed a dual-path catalytic mechanism combining direct ozonation and free radical chain reactions. Practical spray tests confirmed that coupling the Mn/ZSM-5 system with ozone oxidation flue gas denitrification achieved over 95% removal of liquid-phase $\mathrm{N}{\mathrm{O}}_2^{-}$ byproducts without compromising the synergistic removal efficiency of NO_x/SO₂. This study provided an efficient catalytic solution for industrial wastewater treatment and the resource utilization of flue gas denitrification byproducts. Full article

A broadband, efficient monolithic microwave integrated circuit power amplifier (MMIC PA) in OMMIC’s 0.1 μm GaN-on-Si technology for 5G millimeter-wave communication is presented. This study concentrates on the output matching design, which has an important influence on the PA’s performance. A compact one-order synthesized transformer network (STN) is adopted to match the 50 Ω load to the extracted large-signal output model of the transistor. A dual-objective strategy is developed for parameter optimization, incorporating the impedance transformation trajectory inside the predefined optimal impedance domain (OID) that satisfies the required specifications, with approximation to selected optimal load impedances. By introducing a custom adjustment factor β into the error function, coupled with an automated iterative tuning process based on S-parameter simulations, desired broadband matching results can be rapidly achieved. The proposed two-stage PA occupies a small chip area of only 1.23 mm² and demonstrates good frequency consistency over the 24–31 GHz band. Continuous-wave characterization shows a flat small-signal gain of 19.7 ± 0.5 dB; both the output power (P_out) and the power-added efficiency (PAE) at the 4 dB compression point remain smooth, ranging from 32.3 to 32.7 dBm and 35.5% to 37.8%, respectively. The peak PAE reaches up to nearly 40% at the center frequency. Full article

Epitaxial growth of β-Ga₂O₃ nanowires on silicon substrates was realized by the low-pressure chemical vapor deposition (LPCVD) method. The as-grown Si/Ga₂O₃ heterojunctions were employed in the Underwater DUV detection. It is found that the carrier type as well as the carrier concentration of the silicon substrate significantly affect the performance of the Si/Ga₂O₃ heterojunction. The p-Si/β-Ga₂O₃ (2.68 × 10¹⁵ cm⁻³) devices exhibit a responsivity of up to 205.1 mA/W, which is twice the performance of the devices on the n-type substrate (responsivity of 93.69 mA/W). Moreover, the devices’ performance is enhanced with the increase in the carrier concentration of the p-type silicon substrates; the corresponding device on the high carrier concentration substrate (6.48 × 10¹⁷ cm⁻³) achieves a superior responsivity of 845.3 mA/W. The performance enhancement is mainly attributed to the built-in electric field at the p-Si/n-Ga₂O₃ heterojunction and the reduction in the Schottky barrier under high carrier concentration. These findings would provide a strategy for optimizing carrier transport and interface engineering in solar-blind UV photodetectors, advancing the practical use of high-performance solar-blind photodetectors for underwater application. Full article

The development of non-noble metal catalysts for gas-phase propylene epoxidation with H₂/O₂ remains challenging due to their inadequate activity and stability. Herein, we report a Cs⁺-modified Ni/TS-1 catalyst (9%Ni-Cs/TS-1), which exhibits unprecedented catalytic performance, giving a state-of-the-art PO formation rate of 382.9 g_PO·kg_cat⁻¹·h⁻¹ with 87.8% selectivity at 200 °C. The catalyst stability was sustainable for 150 h, far surpassing reported Ni-based catalysts. Ni/TS-1 exhibited low catalytic activity. However, the Cs modification significantly enhanced the performance of Ni/TS-1. Furthermore, the intrinsic reason for the enhanced performance was elucidated by multiple techniques such as XPS, N₂ physisorption, TEM, ²⁹Si NMR, NH₃-TPD-MS, UV–vis, and so on. The findings indicated that the incorporation of Cs⁺ markedly boosted the reduction of Ni, enhanced Ni⁰ formation, strengthened Ni-Ti interactions, reduced acid sites to inhibit PO isomerization, improved the dispersion of Ni nanoparticles, reduced particle size, and improved the hydrophobicity of Ni/TS-1 to facilitate propylene adsorption/PO desorption. The 9%Ni-Cs/TS-1 catalyst demonstrated exceptional performance characterized by a low cost, high activity, and long-term stability, offering a viable alternative to Au-based systems. Full article

Gallium nitride (GaN) enhancement-mode high-electron-mobility transistors ( E-HEMTs) deliver superior performance compared to traditional silicon (Si) and silicon carbide (SiC) counterparts. Their faster switching speeds, lower on-state resistances, and higher operating frequencies enable more efficient and compact power converters. However, their integration into high-power applications is limited by critical reliability concerns, particularly regarding their short-circuit (SC) withstand capability and overvoltage (OV) resilience. GaN devices typically exhibit SC withstand times of only a few hundred nanoseconds, needing ultrafast protection circuits, which conventional desaturation (DESAT) methods cannot adequately provide. Furthermore, their high switching transients increase the risk of false activation events. The lack of avalanche capability and the dynamic nature of GaN breakdown voltage exacerbate issues related to OV stress during fault conditions. Although SC-related behaviour in GaN devices has been previously studied, a focused and comprehensive review of protection strategies tailored to GaN technology remains lacking. This paper fills that gap by providing an in-depth analysis of SC and OV failure phenomena, coupled with a critical evaluation of current and next-generation protection schemes suitable for GaN-based high-power converters. Full article

In this study, we introduce a high-resolution, high-speed thermal imaging technique using Raman spectroscopy to simultaneously measure the temperature of a substrate and a channel. By modifying the Raman spectrometer, we achieved a measurement speed faster than commercial spectrometers. This system demonstrated a sub-micron spatial resolution and the ability to measure the temperatures of the Si substrate and GaN channel simultaneously. During high-current operation, we observed significant self-heating in the GaN channel, with hotspots 100 °C higher than the surroundings, while the Si substrate showed an even temperature distribution. The ability to detect hotspots can help secure the reliability of devices through early failure analysis and can also be used for improvement research to reduce hotspots. These findings highlight the potential of this technique for early defect inspection and device improvement research. This study provides a novel and effective method for measuring the sub-micron resolution temperature distribution in devices, which can be applied to various semiconductor devices, including SiC-based power devices. Full article

Dynamic on-resistance (R_ON) of commercial GaN on Si normally off high-electron-mobility transistor (HEMT) devices is a very important parameter because it is responsible for conduction losses that limit the power conversion efficiency of high-power switching converters. Due to charge trapping effects, dynamic R_ON is always higher than in DC, a behavior known as current collapse. To study how short-time dynamics of charge trapping and release affects R_ON we use rectangular 0–5 V gate voltage pulses with durations in the 1 μs to 100 μs range. Measurements are first carried out for single pulses of increasing duration, and it is found that R_ON depends on both pulse duration and drain current I_D, being higher at shorter pulse durations and lower I_D. For a train of five pulses, R_ON decreases with pulse number, reaching a steady state after a time interval of 100 μs. The response to a five pulses train is compared to that of a square-wave signal to study the time evolution of R_ON toward a dynamic steady state. The DC R_ON is also measured, and it is a factor of ten smaller than dynamic R_ON at the same I_D. This confirms that a reduction in trapped charges takes place in DC as compared to the square-wave switching operation. Additional off-state stress tests at V_DS = 55 V reveal the presence of residual surface traps in the drain access region, leading to four times increase in R_ON in comparison to pristine devices. Finally, the dynamic R_ON is also measured by the double-pulse test (DPT) technique with inductive load, giving a good agreement with results from single-pulse measurements. Full article

The GaN-based green miniaturized light-emitting diode (mini-LED) is a key component for the realization of full-color display. Optimized passivation layers can alleviate the trapping of carriers by sidewall defects and are regarded as an effective way to improve the external quantum efficiency (EQE) efficiency of mini-LEDs. Since AlN has a closer lattice match to GaN compared to other heterogeneous passivation materials, we boosted the EQE of GaN-based green flip-chip mini-LEDs through the deposition of a lattice-compatible AlN passivation layer through atomic layer deposition (ALD) and a SiO₂ passivation layer through plasma-enhanced chemical vapor deposition (PECVD). Benefiting from reduced sidewall nonradiative recombination, the EQE of the green flip-chip mini-LED with a composite ALD-AlN/PECVD-SiO₂ passivation layer reached 34.14% at 5 mA, which is 34.6% higher than that of the green flip-chip mini-LED with a single PECVD-SiO₂ passivation layer. The results provide guidance for the realization of high-performance mini-LEDs by selecting lattice-compatible passivation layers. Full article

The initial surface reaction of gallium nitride (GaN) grown by atomic layer deposition (GaN-ALD) was investigated using density functional theory (DFT) calculations. Trimethylgallium (TMG) and ammonia (NH₃) were used as gallium (Ga) and nitrogen (N) precursors, respectively. DFT calculations at the B3LYP/6-311+G(2d,p) and 6-31G(d) levels were performed to compute relative energies and optimize chemical structures, respectively. TMG adsorption on Si₁₅H₁₈–(NH₂)₂ and Si₁₅H₂₀=(NH)₂ clusters was modeled, where –NH₂ and =NH surface species served as adsorption sites. The reaction mechanisms in the adsorption and nitridation steps were investigated. The results showed that TMG can adsorb on both surface adsorption sites. In the initial adsorption stage, TMG adsorbs onto =NH- and –NH₂-terminated Si(100) surfaces with activation energies of 1.11 and 2.00 eV, respectively, indicating that the =NH site is more reactive. During subsequent NH3 adsorption, NH₃ adsorbs onto the residual TMG on the =NH- and –NH₂-terminated surfaces with activation energies of approximately 2.00 ± 0.02 eV. The reaction pathways indicate that NH₃ adsorbs via similar mechanisms on both surfaces, resulting in comparable nitridation kinetics. Furthermore, this study suggests that highly reactive NH₂⁻ species generated in the gas phase from ionized NH₃ may help reduce the process temperature in the GaN-ALD process. Full article

L-thyroxine (T4) is an important hormone for diagnosing and evaluating thyroid function disorders. As outlined in ISO17511, having a certified reference material (CRM) is crucial for ensuring that the results of clinical tests are traceable to the SI-unit. This study employed two principal methods to evaluate the purity of T4, mass balance (MB) and quantitative nuclear magnetic resonance (qNMR), both of which are SI-traceable (International System of Units) approaches. The MB method involved a detailed analysis of impurities, including water, structurally related compounds, and volatile and non-volatile substances. A variety of techniques were employed to characterize T4 and its impurities, including liquid-phase tandem high-resolution mass spectrometry, ultraviolet spectrophotometry, infrared spectroscopy, and both ¹H-NMR and ¹³C-NMR. Additionally, impurities were quantified using Karl Fischer coulometric titration, ion chromatography, gas chromatography–mass spectrometry, and inductively coupled plasma–mass spectrometry. In qNMR, ethylparaben was used as the internal standard for direct value assignment. The results showed T4 purities of 94.92% and 94.88% for the MB and qNMR methods, respectively. The water content was determined to be 3.563% (n = 6), representing the highest impurity content. Ten structurally related organic impurities were successfully separated, and five of them were quantified. Ultimately, a purity of 94.90% was assigned to T4 CRM, with an expanded uncertainty of 0.34% (k = 2). Full article

Aiming at the problems of insufficient natural productivity and large seepage resistance in low-permeability oil and gas reservoirs, a nano relative permeability improver based on nano SiO₂ was developed in this study. The nano relative permeability improver was prepared by the reversed-phase microemulsion method, and the formula was optimized (nano SiO₂ 5.1%, Span-80 33%, isobutanol 18%, NaCl 2%), so that the minimum median particle size was 4.2 nm, with good injectivity and stability. Performance studies showed that the improvement agent had low surface tension (30–35 mN/m) and interfacial tension (3–8 mN/m) as well as significantly reduced the rock wetting angle (50–84°) and enhanced wettability. In addition, it had good temperature resistance, shear resistance, and acid-alkali resistance, making it suitable for complex environments in low-permeability reservoirs. Full article

GaN flying-capacitor-multi-level (FCML) Totem-Pole power-factor-correctors (PFCs) have been demonstrated with very high density and efficiency in the literature. However, there is still a lack of detailed discussion about flying capacitor voltage precharge during the start-up for GaN FCML Totem-Pole PFCs. To enhance the reliability during start-up, we propose a multi-path and multi-step flying capacitor precharge method. In our proposed method, the bulky DC link capacitor is precharged through the path of the auxiliary line-frequency Si diode half-bridge and the body-diodes of the Si MOSFET half-bridge. The flying capacitors which have much smaller capacitances are precharged through the path of the GaN devices and the body-diodes of the Si half-bridge. The DC link capacitor is more than 100 times higher than the flying capacitor in this topology. Therefore, by splitting the total precharging current into two paths, the precharging current through the GaN devices is almost 100 times lower than that through the body-diodes of Si MOSFETs. As a result, this method protects expensive GaN devices from high inrush current and significantly improves the reliability of the GaN devices during the voltage precharge. Detailed operation principles and experimental verifications are presented in this paper. Full article

The potential of dry reforming methane (DRM) to convert two greenhouse gases concurrently is drawing interest from around the world. This research focused on developing supported nickel catalysts for the DRM, utilizing stabilized zirconia (SZ31107), which contains 5% SiO₂, as the support material. To promote the catalysts with a 5 wt.% Ni concentration, we used varying gallium loadings, specifically 0.1, 0.25, 0.5, 0.75, and 1 wt.%. After a detailed analysis, characterization was performed using X-ray diffraction, N₂-physorption, temperature-programmed reduction/desorption techniques, thermogravimetry, and Raman spectroscopy. The optimal DRM performance, achieved at 700 °C with a 1:1 CH₄:CO₂ feed, was recorded for the catalyst that has 0.25 wt.% Ga. The catalyst demonstrated remarkable average conversion rates of 56% for CH₄ and 66% for CO₂ after 300 min at 700 °C, with an H₂:CO ratio of 0.84. Activity was further enhanced by raising the temperature to 800 °C, which resulted in an 87% CO₂ conversion and an 80% CH₄ conversion. Studies on the catalyst’s long-term stability revealed a slow deactivation. With computed activation energies of 28,009 J/mol for CH₄ conversion and 21,875 J/mol for CO₂ conversion, temperature-programmed reaction tests conducted over the best catalyst demonstrated the DRM reaction’s endothermic character. Small additions of Ga encouraged the creation of more graphitic carbon structures, according to Raman spectroscopy of spent catalysts; the ideal catalyst had the lowest I_D/I_G ratio. These results suggest that the 5Ni+0.25Ga/SZ31107 catalyst is a promising candidate for large-scale syngas and hydrogen production. Full article