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Electronics
Volume 14
Issue 15
10.3390/electronics14152996
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Article

A High-Efficiency GaN-on-Si Power Amplifier Using a Rapid Dual-Objective Optimization Method for 5G FR2 Applications

by
Lin Peng
,
Zuxin Ye
,
Yawen Zhang
,
Chenxuan Zhang
,
Yuda Fu
,
Jian Qin
and
Yuan Liang
*
School of Electronics and Communication Engineering, Guangzhou University, Guangzhou 510006, China
*
Author to whom correspondence should be addressed.
Electronics 2025, 14(15), 2996; https://doi.org/10.3390/electronics14152996 (registering DOI)
Submission received: 11 July 2025 / Revised: 19 July 2025 / Accepted: 24 July 2025 / Published: 27 July 2025
(This article belongs to the Special Issue Advanced RF/Microwave Circuits and System for New Applications)
Versions Notes

Abstract

A broadband, efficient monolithic microwave integrated circuit power amplifier (MMIC PA) in OMMIC’s 0.1 μm GaN-on-Si technology for 5G millimeter-wave communication is presented. This study concentrates on the output matching design, which has an important influence on the PA’s performance. A compact one-order synthesized transformer network (STN) is adopted to match the 50 Ω load to the extracted large-signal output model of the transistor. A dual-objective strategy is developed for parameter optimization, incorporating the impedance transformation trajectory inside the predefined optimal impedance domain (OID) that satisfies the required specifications, with approximation to selected optimal load impedances. By introducing a custom adjustment factor β into the error function, coupled with an automated iterative tuning process based on S-parameter simulations, desired broadband matching results can be rapidly achieved. The proposed two-stage PA occupies a small chip area of only 1.23 mm2 and demonstrates good frequency consistency over the 24–31 GHz band. Continuous-wave characterization shows a flat small-signal gain of 19.7 ± 0.5 dB; both the output power (Pout) and the power-added efficiency (PAE) at the 4 dB compression point remain smooth, ranging from 32.3 to 32.7 dBm and 35.5% to 37.8%, respectively. The peak PAE reaches up to nearly 40% at the center frequency.
Keywords: 5G millimeter-wave; broadband power amplifier; GaN HEMT; high efficiency; optimal impedance domain; synthesized transformer network 5G millimeter-wave; broadband power amplifier; GaN HEMT; high efficiency; optimal impedance domain; synthesized transformer network

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MDPI and ACS Style

Peng, L.; Ye, Z.; Zhang, Y.; Zhang, C.; Fu, Y.; Qin, J.; Liang, Y. A High-Efficiency GaN-on-Si Power Amplifier Using a Rapid Dual-Objective Optimization Method for 5G FR2 Applications. Electronics 2025, 14, 2996. https://doi.org/10.3390/electronics14152996

AMA Style

Peng L, Ye Z, Zhang Y, Zhang C, Fu Y, Qin J, Liang Y. A High-Efficiency GaN-on-Si Power Amplifier Using a Rapid Dual-Objective Optimization Method for 5G FR2 Applications. Electronics. 2025; 14(15):2996. https://doi.org/10.3390/electronics14152996

Chicago/Turabian Style

Peng, Lin, Zuxin Ye, Yawen Zhang, Chenxuan Zhang, Yuda Fu, Jian Qin, and Yuan Liang. 2025. "A High-Efficiency GaN-on-Si Power Amplifier Using a Rapid Dual-Objective Optimization Method for 5G FR2 Applications" Electronics 14, no. 15: 2996. https://doi.org/10.3390/electronics14152996

APA Style

Peng, L., Ye, Z., Zhang, Y., Zhang, C., Fu, Y., Qin, J., & Liang, Y. (2025). A High-Efficiency GaN-on-Si Power Amplifier Using a Rapid Dual-Objective Optimization Method for 5G FR2 Applications. Electronics, 14(15), 2996. https://doi.org/10.3390/electronics14152996

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