Special Issue "Nanomaterials for the Advanced Manufacturing of Electronic Devices"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 31 March 2020.

Special Issue Editors

Prof. Dr. Francesc Perez-Murano
E-Mail Website
Guest Editor
Universitat Autònoma de Barcelona, Barcelona, Spain
Interests: advanced nanofabrication methods, nanoelectronic devices, nanoelectromechanical systems, advanced AFM methods
Dr. Esteve Amat
E-Mail Website1 Website2
Guest Editor
Institute of Microelectronics of Barcelona, Barcelona, Spain
Interests: device reliability, memories, advanced nanofabrication methods, nanoelectronic devices

Special Issue Information

Dear Colleagues,

This Special Issue will be focused on the use of nanomaterials and nanostructured materials in the fabrication of electronic devices: how do nanomaterials or a nanostructured materials improve the performance of a device or enable its manufacturing. Examples of possible topics would be:

  • Nanodevices based on nanocrystals and quantum dots
  • Materials issues related to resisitive switching devices
  • Advanced materials in the fabrication of nanoelectronic devices, such as block copolymers
  • Processing methods for controlling the dimensions of materials in nanodevice fabrication: ALD, ALE, etc.
  • Nanolithography for structuring materials in nanodevice fabrication
  • Low dimensional materials (like 2D materials) for nanodevice fabrication
  • Bottom-up fabrication of nanoelectronic devices
  • Modelling of nanometarials in electronic devices
Prof. Dr. Francesc Perez-Murano
Dr. Esteve Amat
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Published Papers (3 papers)

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Research

Open AccessArticle
High Volume-Per-Dose and Low Resistivity of Cobalt Nanowires Grown by Ga+ Focused Ion Beam Induced Deposition
Nanomaterials 2019, 9(12), 1715; https://doi.org/10.3390/nano9121715 - 01 Dec 2019
Abstract
The growth of ferromagnetic nanostructures by means of focused-Ga+-beam-induced deposition (Ga+-FIBID) using the Co2(CO)8 precursor has been systematically investigated. The work aimed to obtain growth conditions allowing for the simultaneous occurrence of high growth speed, good [...] Read more.
The growth of ferromagnetic nanostructures by means of focused-Ga+-beam-induced deposition (Ga+-FIBID) using the Co2(CO)8 precursor has been systematically investigated. The work aimed to obtain growth conditions allowing for the simultaneous occurrence of high growth speed, good lateral resolution, low electrical resistivity, and ferromagnetic behavior. As a first result, it has been found that the competition between deposition and milling that is produced by the Ga+ beam is a limiting factor. In our working conditions, with the maximum available precursor flux, the maximum deposit thickness has been found to be 65 nm. The obtained volumetric growth rate is at least 50 times higher than in the case of deposition by focused-electron-beam-induced deposition. The lateral resolution of the deposits can be as good as 50 nm while using Ga+-beam currents lower than 10 pA. The high metallic content of the as-grown deposits gives rise to a low electrical resistivity, within the range 20–40 µΩ·cm. Magnetic measurements confirm the ferromagnetic nature of the deposits at room temperature. In conclusion, the set of obtained results indicates that the growth of functional ferromagnetic nanostructures by Ga+-FIBID while using the Co2(CO)8 precursor is a viable and competitive technique when compared to related nanofabrication techniques. Full article
(This article belongs to the Special Issue Nanomaterials for the Advanced Manufacturing of Electronic Devices)
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Open AccessArticle
Fabrication of Novel Printable Electrically Conductive Adhesives (ECAs) with Excellent Conductivity and Stability Enhanced by the Addition of Polyaniline Nanoparticles
Nanomaterials 2019, 9(7), 960; https://doi.org/10.3390/nano9070960 - 01 Jul 2019
Cited by 2
Abstract
Electrically conductive adhesives (ECAs) are one of the low temperature bonding materials. It can be used to replace toxic Sn-Pb solder. The key issue for the application of ECAs is how to improve their electrical properties. In the present study, we develop an [...] Read more.
Electrically conductive adhesives (ECAs) are one of the low temperature bonding materials. It can be used to replace toxic Sn-Pb solder. The key issue for the application of ECAs is how to improve their electrical properties. In the present study, we develop an effective method to promote the electrical properties of ECAs by addition of polyaniline (PANI) nanoparticles. PANIs were synthesized via a facile one-step chemical oxidative polymerization method. After adding 0.5 wt% PANI nanoparticles, the conductivity of ECAs increased dramatically by an order of magnitude. The bulk resistivity of 8.8 × 10−5 Ω·cm is achieved for 65 wt% silver fillers with 0.5 wt% PANIs loaded ECAs. Besides, this improvement has no negative effect on the shear strength and the aging life of ECAs. Moreover, the use of PANIs not only lowers the percolation threshold of ECAs, but also reduces the cost and improves the bonding reliability. Finally, PANIs enhanced ECAs patterns were successfully printed by a stencil printing method, which proved their potential applications in replacing conventional solder pastes and printing functional circuits. Full article
(This article belongs to the Special Issue Nanomaterials for the Advanced Manufacturing of Electronic Devices)
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Open AccessArticle
The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide
Nanomaterials 2019, 9(5), 784; https://doi.org/10.3390/nano9050784 - 22 May 2019
Cited by 1
Abstract
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO2 (blocking layer)/Si-rich SiO [...] Read more.
We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO2 (blocking layer)/Si-rich SiOX (charge trapping layer)/SiOXNY (tunneling layer) as a gate insulator. The insulators were deposited using inductive coupled plasma chemical vapor deposition, and during the deposition, the trap states of the Si-rich SiOx charge trapping layer could be controlled to widen the memory window with the gas ratio (GR) of SiH4:N2O, which was confirmed by fourier transform infrared spectroscopy (FT-IR). We fabricated the metal–insulator–silicon (MIS) capacitors of the insulator structures on n-type Si substrate and demonstrated that the hysteresis capacitive curves of the MIS capacitors were a function of sweep voltage and trap density (or GR). At the GR6 (SiH4:N2O = 30:5), the MIS capacitor exhibited the widest memory window; the flat band voltage (ΔVFB) shifts of 4.45 V was obtained at the sweep voltage of ±11 V for 10 s, and it was expected to maintain ~71% of the initial value after 10 years. Using the Si-rich SiOX charge trapping layer deposited at the GR6 condition, we fabricated a bottom gate ITZO NVM TFT showing excellent drain current to gate voltage transfer characteristics. The field-effect mobility of 27.2 cm2/Vs, threshold voltage of 0.15 V, subthreshold swing of 0.17 V/dec, and on/off current ratio of 7.57 × 107 were obtained at the initial sweep of the devices. As an NVM, ΔVFB was shifted by 2.08 V in the programing mode with a positive gate voltage pulse of 11 V and 1 μs. The ΔVFB was returned to the pristine condition with a negative voltage pulse of −1 V and 1 μs under a 400–700 nm light illumination of ~10 mWcm−2 in erasing mode, when the light excites the electrons to escape from the charge trapping layer. Using this operation condition, ~90% (1.87 V) of initial ΔVFB (2.08 V) was expected to be retained over 10 years. The developed transparent NVM using Si-rich SiOx and ITZO can be a promising candidate for future display devices integrating logic devices on panels. Full article
(This article belongs to the Special Issue Nanomaterials for the Advanced Manufacturing of Electronic Devices)
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