Special Issue "Dielectric Nanophotonics and Their Applications"

A special issue of Nanomaterials (ISSN 2079-4991).

Deadline for manuscript submissions: 20 October 2019.

Special Issue Editors

Guest Editor
Prof. Emiliano Cortés

1. Imperial College London, Department of Physics, London, United Kingdom
2. Ludwig-Maximilians-Universität München (LMU), Department of Physics, Munich, Germany
Website | E-Mail
Interests: photonics; plasmonics; enhanced spectroscopies; photocatalysis; nanomaterials
Guest Editor
Dr. Gustavo Grinblat

Imperial College London, Department of Physics, London, United Kingdom
Website | E-Mail
Interests: dielectric nanophotonics; plasmonics; 2D materials; nonlinear optics; ultrafast optics

Special Issue Information

Dear Colleagues,

In recent years, the photonics and plasmonics communities have aimed to expand their nano-optics toolbox in order to improve light confinement capabilities of nanomaterials and enhance light–matter interactions at the nanoscale. In particular, nanostructured high-refractive index dielectrics have demonstrated the ability to highly confine electric and magnetic fields to subwavelength volumes and tailor light dispersion, while displaying ultralow absorption—compared to metals—when excited below their bandgap energies. As such, new and interesting applications are expected to emerge by exploiting this type of technology. 

This Special Issue of Nanomaterials aims to highlight articles reporting on novel properties and phenomena of dielectric nanophotonics. It focuses on the fabrication, optical characteristics, and prospective nanophotonic applications of nanostructured dielectrics in the forms of reviews, communications, and academic articles. The topics cover a wide range of research fields, either from the experimental or theoretical points of view, including nanofabrication, enhanced light-matter interaction, nonlinear phenomena, metasurfaces and waveguides, among others.

Prof. Emiliano Cortés
Dr. Gustavo Grinblat
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanoantennas
  • Nonlinear phenomena
  • Enhanced light-matter interaction
  • Metasurfaces
  • Waveguides
  • Ultrafast nanophotonics
  • Enhanced spectroscopies
  • Topological nanophotonics
  • Quantum nanophotonics
  • Dielectric nanoparticles

Published Papers (5 papers)

View options order results:
result details:
Displaying articles 1-5
Export citation of selected articles as:

Research

Open AccessArticle
Numerical Study on Mie Resonances in Single GaAs Nanomembranes
Nanomaterials 2019, 9(6), 856; https://doi.org/10.3390/nano9060856
Received: 14 May 2019 / Revised: 3 June 2019 / Accepted: 4 June 2019 / Published: 5 June 2019
PDF Full-text (5137 KB) | HTML Full-text | XML Full-text
Abstract
GaAs nanomembranes grown by selective area epitaxy are novel structures. The high refractive index of GaAs makes them good candidates for nanoantennas. We numerically studied the optical modal structure of the resonator. The nanomembrane geometry introduces a strong light-polarization dependence. The scattering is [...] Read more.
GaAs nanomembranes grown by selective area epitaxy are novel structures. The high refractive index of GaAs makes them good candidates for nanoantennas. We numerically studied the optical modal structure of the resonator. The nanomembrane geometry introduces a strong light-polarization dependence. The scattering is dominated by an electric dipole contribution for polarization along the nanomembrane long dimension and by a magnetic dipole contribution in the orthogonal direction. The dependence on the geometry of the resonances close to the GaAs band gap was modeled by a single coefficient. It describes the resonance shifts against up-to 40% changes in length, height, and width. We showed that the nanomembranes exhibited field enhancement, far-field directionality, and tunability with the GaAs band gap. All these elements confirm their great potential as nanoantennas. Full article
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
Figures

Graphical abstract

Open AccessArticle
Hybrid Graphene-Silicon Based Polarization-Insensitive Electro-Absorption Modulator with High-Modulation Efficiency and Ultra-Broad Bandwidth
Nanomaterials 2019, 9(2), 157; https://doi.org/10.3390/nano9020157
Received: 22 December 2018 / Revised: 20 January 2019 / Accepted: 22 January 2019 / Published: 27 January 2019
PDF Full-text (3565 KB) | HTML Full-text | XML Full-text
Abstract
Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is [...] Read more.
Polarization-insensitive modulation, i.e., overcoming the limit of conventional modulators operating under only a single-polarization state, is desirable for high-capacity on-chip optical interconnects. Here, we propose a hybrid graphene-silicon-based polarization-insensitive electro-absorption modulator (EAM) with high-modulation efficiency and ultra-broad bandwidth. The hybrid graphene-silicon waveguide is formed by leveraging multi-deposited and multi-transferred methods to enable light interaction with graphene layers in its intense field distribution region instead of the commonly used weak cladding region, thus resulting in enhanced light–graphene interaction. By optimizing the dimensions of all hybrid graphene-silicon waveguide layers, polarization-insensitive modulation is achieved with a modulation efficiency (ME) of ~1.11 dB/µm for both polarizations (ME discrepancy < 0.006 dB/µm), which outperforms that of previous reports. Based on this excellent modulation performance, we designed a hybrid graphene-silicon-based EAM with a length of only 20 µm. The modulation depth (MD) and insertion loss obtained were higher than 22 dB and lower than 0.23 dB at 1.55 µm, respectively, for both polarizations. Meanwhile, its allowable bandwidth can exceed 300 nm by keeping MD more than 20 dB and MD discrepancy less than 2 dB, simultaneously, and its electrical properties were also analyzed. Therefore, the proposed device can be applied in on-chip optical interconnects. Full article
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
Figures

Graphical abstract

Open AccessArticle
Anapole Modes in Hollow Nanocuboid Dielectric Metasurfaces for Refractometric Sensing
Nanomaterials 2019, 9(1), 30; https://doi.org/10.3390/nano9010030
Received: 4 December 2018 / Revised: 21 December 2018 / Accepted: 23 December 2018 / Published: 27 December 2018
Cited by 2 | PDF Full-text (914 KB) | HTML Full-text | XML Full-text
Abstract
This work proposes the use of the refractive index sensitivity of non-radiating anapole modes of high-refractive-index nanoparticles arranged in planar metasurfaces as a novel sensing principle. The spectral position of anapole modes excited in hollow silicon nanocuboids is first investigated as a function [...] Read more.
This work proposes the use of the refractive index sensitivity of non-radiating anapole modes of high-refractive-index nanoparticles arranged in planar metasurfaces as a novel sensing principle. The spectral position of anapole modes excited in hollow silicon nanocuboids is first investigated as a function of the nanocuboid geometry. Then, nanostructured metasurfaces of periodic arrays of nanocuboids on a glass substrate are designed. The metasurface parameters are properly selected such that a resonance with ultrahigh Q-factor, above one million, is excited at the target infrared wavelength of 1.55 µm. The anapole-induced resonant wavelength depends on the refractive index of the analyte superstratum, exhibiting a sensitivity of up to 180 nm/RIU. Such values, combined with the ultrahigh Q-factor, allow for refractometric sensing with very low detection limits in a broad range of refractive indices. Besides the sensing applications, the proposed device can also open new venues in other research fields, such as non-linear optics, optical switches, and optical communications. Full article
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
Figures

Figure 1

Open AccessArticle
Dielectric Metasurface-Based High-Efficiency Mid-Infrared Optical Filter
Nanomaterials 2018, 8(11), 938; https://doi.org/10.3390/nano8110938
Received: 23 October 2018 / Revised: 7 November 2018 / Accepted: 13 November 2018 / Published: 14 November 2018
Cited by 3 | PDF Full-text (3820 KB) | HTML Full-text | XML Full-text
Abstract
Dielectric nanoresonantors may generate both electric and magnetic Mie resonances with low optical loss, thereby offering highly efficient paths for obtaining integrated optical devices. In this paper, we propose and design an optical filter with a high working efficiency in the mid-infrared (mid-IR) [...] Read more.
Dielectric nanoresonantors may generate both electric and magnetic Mie resonances with low optical loss, thereby offering highly efficient paths for obtaining integrated optical devices. In this paper, we propose and design an optical filter with a high working efficiency in the mid-infrared (mid-IR) range, based on an all-dielectric metasurface composed of silicon (Si) nanodisk arrays. We numerically demonstrate that, by increasing the diameter of the Si nanodisk, the range of the proposed reflective optical filter could effectively cover a wide range of operation wavelengths, from 3.8 μm to 4.7 μm, with the reflection efficiencies reaching to almost 100%. The electromagnetic eigen-mode decomposition of the silicon nanodisk shows that the proposed optical filter is based on the excitation of the electric dipole resonance. In addition, we demonstrate that the proposed filter has other important advantages of polarization-independence and incident-angle independence, ranging from 0° to 20° at the resonance dip, which can be used in a broad range of applications, such as sensing, imaging, and energy harvesting. Full article
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
Figures

Figure 1

Open AccessArticle
Defect-Induced Tunable Permittivity of Epsilon-Near-Zero in Indium Tin Oxide Thin Films
Nanomaterials 2018, 8(11), 922; https://doi.org/10.3390/nano8110922
Received: 18 October 2018 / Revised: 2 November 2018 / Accepted: 5 November 2018 / Published: 7 November 2018
Cited by 2 | PDF Full-text (3067 KB) | HTML Full-text | XML Full-text
Abstract
Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength [...] Read more.
Defect-induced tunable permittivity of Epsilon-Near-Zero (ENZ) in indium tin oxide (ITO) thin films via annealing at different temperatures with mixed gases (98% Ar, 2% O2) was reported. Red-shift of λENZ (Epsilon-Near-Zero wavelength) from 1422 nm to 1995 nm in wavelength was observed. The modulation of permittivity is dominated by the transformation of plasma oscillation frequency and carrier concentration depending on Drude model, which was produced by the formation of structural defects and the reduction of oxygen vacancy defects during annealing. The evolution of defects can be inferred by means of X-ray diffraction (XRD), atomic force microscopy (AFM), and Raman spectroscopy. The optical bandgaps (Eg) were investigated to explain the existence of defect states. And the formation of structure defects and the electric field enhancement were further verified by finite-difference time domain (FDTD) simulation. Full article
(This article belongs to the Special Issue Dielectric Nanophotonics and Their Applications)
Figures

Figure 1

Nanomaterials EISSN 2079-4991 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top