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Nanomaterials
Special Issues
Controlled Growth and Properties of Semiconductor Nanomaterials
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Controlled Growth and Properties of Semiconductor Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 23 May 2025 | Viewed by 3038

Special Issue Editor

Dr. Xin Rong

E-Mail Website
Guest Editor
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
Interests: III-nitride semiconductors; III-oxide semiconductors; nanomaterials; infrared detectors; UV-LEDs; field effect transistors

Special Issue Information

Dear Colleagues,

The growth of high-quality semiconductor materials is an important issue and fundamental method to improve device performance. In recent years, nanomaterials, including nanoparticles, nanowires, nanowalls, nanoflowers, nanotubes, core–shell structures, and ultrathin quantum structures, have attracted much attention as a promising class of materials for optoelectronic applications, especially for group III-V materials and III-oxide semiconductors. Combining the advantages of the material itself and its nanostructures, it will manifest novel physical properties and device applications.

The scope of this Special Issue ranges from the controlled growth of nanomaterials to properties and practical applications. The materials are suggested to be group III-V materials and III-oxide semiconductors.

This Special Issue focuses on the controlled growth of nanomaterials, the characterization of nanostructures, and practical applications. The growth starts from substrates, followed by buffers, epi-layers, and nanostructures. The growth process is in situ characterized if possible. The growth diagram can be shown, and the lattice misfit, defect, strain, polarity control, and crystal phase transition can also be discussed. The properties which are affected by different nanostructures or nanomaterials should be investigated.

Original research articles and reviews are welcome in this Special Issue. Research areas may include (but are not limited to) the following:

  • Fabrications and characterizations of nanostructures;
  • Novel quantum structures and their applications;
  • Devices based on semiconductor nanomaterials.

We look forward to receiving your contributions.

Dr. Xin Rong
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • group III–V semiconductors
  • III-oxide semiconductors
  • nanowires
  • hybrid nanostructures
  • QW and QD structures
  • growth diagram
  • strain and polarity
  • structural properties
  • optical and electrical properties
  • optoelectronic devices

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (2 papers)

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Research

13 pages, 3619 KiB  
Article
Flexible Artificial Ag NPs:a–SiC0.11:H Synapse on Al Foil with High Uniformity and On/Off Ratio for Neuromorphic Computing
by Zongyan Zuo, Chengfeng Zhou, Zhongyuan Ma, Yufeng Huang, Liangliang Chen, Wei Li, Jun Xu and Kunji Chen
Nanomaterials 2024, 14(18), 1474; https://doi.org/10.3390/nano14181474 - 10 Sep 2024
Viewed by 1188
Abstract
A neuromorphic computing network based on SiCx memristor paves the way for a next-generation brain-like chip in the AI era. Up to date, the SiCx–based memristor devices are faced with the challenge of obtaining flexibility and uniformity, which can push [...] Read more.
A neuromorphic computing network based on SiCx memristor paves the way for a next-generation brain-like chip in the AI era. Up to date, the SiCx–based memristor devices are faced with the challenge of obtaining flexibility and uniformity, which can push forward the application of memristors in flexible electronics. For the first time, we report that a flexible artificial synaptic device based on a Ag NPs:a–SiC0.11:H memristor can be constructed by utilizing aluminum foil as the substrate. The device exhibits stable bipolar resistive switching characteristic even after bending 1000 times, displaying excellent flexibility and uniformity. Furthermore, an on/off ratio of approximately 107 can be obtained. It is found that the incorporation of silver nanoparticles significantly enhances the device’s set and reset voltage uniformity by 76.2% and 69.7%, respectively, which is attributed to the contribution of the Ag nanoparticles. The local electric field of Ag nanoparticles can direct the formation and rupture of conductive filaments. The fitting results of I–V curves show that the carrier transport mechanism agrees with Poole–Frenkel (P–F) model in the high-resistance state, while the carrier transport follows Ohm’s law in the low-resistance state. Based on the multilevel storage characteristics of the Al/Ag NPs:a–SiC0.11:H/Al foil resistive switching device, we successfully observed the biological synaptic characteristics, including the long–term potentiation (LTP), long–term depression (LTD), and spike–timing–dependent plasticity (STDP). The flexible artificial Ag NPs:a–SiC0.11:H/Al foil synapse possesses excellent conductance modulation capabilities and visual learning function, demonstrating the promise of application in flexible electronics technology for high-efficiency neuromorphic computing in the AI period. Full article
(This article belongs to the Special Issue Controlled Growth and Properties of Semiconductor Nanomaterials)
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12 pages, 11900 KiB  
Article
Morphology Control and Mechanism of Different Bath Systems in Cu/SiCw Composite Electroplating
by Bing Niu, Dongdong Xie, Yanxin Zhang, Yuxiao Bi, Yigui Li, Guifu Ding and Liyan Lai
Nanomaterials 2024, 14(12), 1043; https://doi.org/10.3390/nano14121043 - 18 Jun 2024
Cited by 1 | Viewed by 1275
Abstract
With the rapid development of electronic technology and large-scale integrated circuit devices, it is very important to develop thermal management materials with high thermal conductivity. Silicon carbide whisker-reinforced copper matrix (Cu/SiCw) composites are considered to be one of the best candidates for future [...] Read more.
With the rapid development of electronic technology and large-scale integrated circuit devices, it is very important to develop thermal management materials with high thermal conductivity. Silicon carbide whisker-reinforced copper matrix (Cu/SiCw) composites are considered to be one of the best candidates for future electronic device radiators. However, at present, most of these materials are produced by high-temperature and high-pressure processes, which are expensive and prone to interfacial reactions. To explore the plating solution system suitable for SiCw and Cu composite electroplating, we tried two different Cu-based plating solutions, namely a Systek UVF 100 plating solution of the copper sulfate (CuSO4) system and a Through Silicon Via (TSV) plating solution of the copper methanesulfonate (Cu(CH3SO3)2) system. In this paper, Cu/SiCw composites were prepared by composite electrodeposition. The morphology of the coating under two different plating liquid systems was compared, and the mechanism of formation of the different morphologies was analyzed. The results show that when the concentration of SiCw in the bath is 1.2 g/L, the surface of the Cu/SiCw composite coating prepared by the CuSO4 bath has more whiskers with irregular distribution and the coating is very smooth, but there are pores at the junction of the whiskers and Cu. There are a large number of irregularly distributed whiskers on the surface of the Cu/SiCw composite coating prepared with the copper methanesulfonate (Cu(CH3SO3)2) system. The surface of the composite is flat, and Cu grows along the whisker structure. The whisker and Cu form a good combination, and there is no pore in the cross-section of the coating. The observation at the cross-section also reveals some characteristics of the toughening mechanism of SiCw, including crack deflection, bridging and whisker pull-out. The existence of these mechanisms indicates that SiCw plays a toughening role in the composites. A suitable plating solution system was selected for the preparation of high-performance Cu/SiCw thermal management materials with the composite electrodeposition process. Full article
(This article belongs to the Special Issue Controlled Growth and Properties of Semiconductor Nanomaterials)
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