Latest Progress in Photodetectors Based on Low-Dimensional and Wide-Bandgap Nanomaterials

Dear Colleagues,

This Special Issue focuses on the cutting-edge advancements in the field of photodetectors, emphasizing the role of low-dimensional and wide-bandgap nanomaterials. The burgeoning interest in these materials stems from their exceptional properties, such as high carrier mobility, robust thermal stability, and significant optical absorption, which are essential for enhancing the performance of photodetectors.

Photodetectors are crucial components in numerous applications across various industries, including communications, healthcare, environmental monitoring, and security systems. The advent of low-dimensional materials such as graphene, transition metal dichalcogenides (TMDs), and black phosphorus, as well as wide-bandgap materials such as gallium nitride (GaN), gallium oxide (Ga₂O₃), and zinc oxide (ZnO), has opened new avenues for the development of photodetectors with improved speed, sensitivity, and spectral response.

This Special Issue aims to provide a comprehensive overview of current trends and future directions in photodetector technology, inspiring further research and development in this dynamic field. It not only highlights the latest scientific discoveries but also bridges the gap between fundamental research and practical applications.

The articles in this Special Issue cover a broad spectrum of topics, including synthesis and characterization of innovative nanomaterials, theoretical models predicting new phenomena, and the integration of these materials into device architectures. Contributions also address the challenges in scalability, device stability, and integration with existing technologies. The format of expected articles includes full papers, communications, and reviews.

Prof. Dr. Yufeng Guo
Prof. Dr. Haiding Sun
Prof. Dr. Peigang Li
Prof. Dr. Zhengwei Zhang
Dr. Maolin Zhang
Guest Editors

Manuscript Submission Information

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