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Nanomaterials
Special Issues
Latest Progress in Photodetectors Based on Low-Dimensional and Wide-Bandgap Nanomaterials
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Latest Progress in Photodetectors Based on Low-Dimensional and Wide-Bandgap Nanomaterials

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 8 August 2025 | Viewed by 1673

Special Issue Editors

Prof. Dr. Yufeng Guo

E-Mail Website
Guest Editor
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: photodetectors; power devices; wide-bandgap semiconductors; organic semiconductors; artificial intelligence
Prof. Dr. Haiding Sun

E-Mail Website
Guest Editor
School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
Interests: molecular beam epitaxy; semiconductor device physics; epitaxial growth; optoelectronics; thin films and nanotechnology; gallium nitride (GaN) epilayers and LEDs; III–V semiconductors; MOCVD; semiconductor lasers; power electronics
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Peigang Li

E-Mail Website
Guest Editor
State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Interests: wide-bandgap semiconductor materials and devices; new quantum information materials; electronic device processing and integration technology
Prof. Dr. Zhengwei Zhang

E-Mail Website
Guest Editor
School of Physics and Electronics, Central South University, Changsha 410017, China
Interests: design and manufacturing of semiconductor materials and devices; wafer-level manufacturing of next-generation semiconductor materials; heteroepitaxy; electronic devices and properties
Special Issues, Collections and Topics in MDPI journals
Dr. Maolin Zhang

E-Mail
Guest Editor
College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
Interests: power devices; photodetectors; wide-bandgap semiconductors

Special Issue Information

Dear Colleagues,

This Special Issue focuses on the cutting-edge advancements in the field of photodetectors, emphasizing the role of low-dimensional and wide-bandgap nanomaterials. The burgeoning interest in these materials stems from their exceptional properties, such as high carrier mobility, robust thermal stability, and significant optical absorption, which are essential for enhancing the performance of photodetectors.

Photodetectors are crucial components in numerous applications across various industries, including communications, healthcare, environmental monitoring, and security systems. The advent of low-dimensional materials such as graphene, transition metal dichalcogenides (TMDs), and black phosphorus, as well as wide-bandgap materials such as gallium nitride (GaN), gallium oxide (Ga2O3), and zinc oxide (ZnO), has opened new avenues for the development of photodetectors with improved speed, sensitivity, and spectral response.

This Special Issue aims to provide a comprehensive overview of current trends and future directions in photodetector technology, inspiring further research and development in this dynamic field. It not only highlights the latest scientific discoveries but also bridges the gap between fundamental research and practical applications.

The articles in this Special Issue cover a broad spectrum of topics, including synthesis and characterization of innovative nanomaterials, theoretical models predicting new phenomena, and the integration of these materials into device architectures. Contributions also address the challenges in scalability, device stability, and integration with existing technologies. The format of expected articles includes full papers, communications, and reviews.

Prof. Dr. Yufeng Guo
Prof. Dr. Haiding Sun
Prof. Dr. Peigang Li
Prof. Dr. Zhengwei Zhang
Dr. Maolin Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • low-dimensional
  • wide-bandgap
  • graphene
  • transition metal dichalcogenides
  • black phosphorus
  • gallium nitride
  • gallium oxide
  • zinc oxide

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Published Papers (2 papers)

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18 pages, 9900 KiB  
Article
Doping Characteristics and Band Engineering of InSe for Advanced Photodetectors: A DFT Study
by Wenkai Zhang, Yafei Ning, Hu Li, Chaoqian Xu, Yong Wang and Yuhan Xia
Nanomaterials 2025, 15(10), 720; https://doi.org/10.3390/nano15100720 - 10 May 2025
Viewed by 246
Abstract
Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in [...] Read more.
Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article
(This article belongs to the Special Issue Latest Progress in Photodetectors Based on Low-Dimensional and Wide-Bandgap Nanomaterials)
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7 pages, 1941 KiB  
Article
Enhanced Optoelectronic Performance and Polarized Sensitivity in WSe2 Nanoscrolls Through Quasi-One-Dimensional Structure
by Jinggao Sui, Xiang Lan, Zhikang Ao and Jinhui Cao
Nanomaterials 2024, 14(23), 1935; https://doi.org/10.3390/nano14231935 - 30 Nov 2024
Viewed by 1040
Abstract
Transition metal dichalcogenides (TMDs), such as tungsten diselenide (WSe2), are expected to be used in next-generation optoelectronic devices due to their unique properties. In this study, we developed a simple method of using ethanol to scroll monolayer WSe2 nanosheets into [...] Read more.
Transition metal dichalcogenides (TMDs), such as tungsten diselenide (WSe2), are expected to be used in next-generation optoelectronic devices due to their unique properties. In this study, we developed a simple method of using ethanol to scroll monolayer WSe2 nanosheets into nanoscrolls. These nanoscrolls have a quasi-one-dimensional structure, which enhances their electronic and optical properties. The characterization confirmed their unique structure, and the photodetectors made of these nanoscrolls have high sensitivity to polarized light, with anisotropy ratios of 1.3 and 1.7 at wavelengths of 638 nm and 808 nm. The enhanced light response is attributed to the large surface area and quantum wire-like behavior of the nanoscrolls, making them suitable for advanced polarization-sensitive devices. Full article
(This article belongs to the Special Issue Latest Progress in Photodetectors Based on Low-Dimensional and Wide-Bandgap Nanomaterials)
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