Advances in Semiconductor Materials for Perovskite Solar Cells

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Synthesis, Interfaces and Nanostructures".

Deadline for manuscript submissions: closed (31 December 2024) | Viewed by 13260

Special Issue Editors

School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, China
Interests: wide band gap semiconductor optoelectronic materials and devices; flexible electronics; perovskite photovoltaic materials and devices
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Guest Editor
Academy of Advanced Intredisciplinary Research, Xidian University, Xi'an, China
Interests: perovskite photovoltaic materials and devices

Special Issue Information

Dear Colleagues,

Perovskite solar cells (PSCs) have received much attention in the last few years, and their power conversion efficiency has increased to over 25%. The efficiency of PSCs is comparable to that of silicon solar cells and is expected to be an important direction for a low-carbon society in the future. The development of novel nanomaterials, such as hole/electron transporting materials, perovskite materials, and carbon materials, is a potential way to further enhance power conversion efficiency and device stability.

The aim of this Special Issue is to collect state-of-the-art contributions related to various applications of novel semiconductor materials in the field of perovskite solar cells. This includes but is not limited to electrode materials, perovskite materials, hole/electron transport materials, and their applications in photovoltaic device. Authors are encouraged to highlight the advantageous features of these materials as well as to address their current limitations and challenges.

Dr. Long Zhou
Dr. Xing Guo
Guest Editors

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Keywords

  • perovskite materials
  • electrode materials
  • hole transport materials
  • electron transport materials
  • photovoltaic device

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Published Papers (3 papers)

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Research

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14 pages, 3189 KiB  
Article
Optimizing Geometry and ETL Materials for High-Performance Inverted Perovskite Solar Cells by TCAD Simulation
by Irodakhon Gulomova, Oussama Accouche, Rayimjon Aliev, Zaher Al Barakeh and Valikhon Abduazimov
Nanomaterials 2024, 14(15), 1301; https://doi.org/10.3390/nano14151301 - 2 Aug 2024
Cited by 2 | Viewed by 2200
Abstract
Due to the optical properties of the electron transport layer (ETL) and hole transport layer (HTL), inverted perovskite solar cells can perform better than traditional perovskite solar cells. It is essential to compare both types to understand their efficiencies. In this article, we [...] Read more.
Due to the optical properties of the electron transport layer (ETL) and hole transport layer (HTL), inverted perovskite solar cells can perform better than traditional perovskite solar cells. It is essential to compare both types to understand their efficiencies. In this article, we studied inverted perovskite solar cells with NiOx/CH3NH3Pb3/ETL (ETL = MoO3, TiO2, ZnO) structures. Our results showed that the optimal thickness of NiOx is 80 nm for all structures. The optimal perovskite thickness is 600 nm for solar cells with ZnO and MoO3, and 800 nm for those with TiO2. For the ETLs, the best thicknesses are 100 nm for ZnO, 80 nm for MoO3, and 60 nm for TiO2. We found that the efficiencies of inverted perovskite solar cells with ZnO, MoO3, and TiO2 as ETLs, and with optimal layer thicknesses, are 30.16%, 18.69%, and 35.21%, respectively. These efficiencies are 1.5%, 5.7%, and 1.5% higher than those of traditional perovskite solar cells. Our study highlights the potential of optimizing layer thicknesses in inverted perovskite solar cells to achieve higher efficiencies than traditional structures. Full article
(This article belongs to the Special Issue Advances in Semiconductor Materials for Perovskite Solar Cells)
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17 pages, 3522 KiB  
Article
Effects of the Electrical Properties of SnO2 and C60 on the Carrier Transport Characteristics of p-i-n-Structured Semitransparent Perovskite Solar Cells
by Hoang Minh Pham, Syed Dildar Haider Naqvi, Huyen Tran, Hung Van Tran, Jonabelle Delda, Sungjun Hong, Inyoung Jeong, Jihye Gwak and SeJin Ahn
Nanomaterials 2023, 13(24), 3091; https://doi.org/10.3390/nano13243091 - 6 Dec 2023
Cited by 7 | Viewed by 3979
Abstract
Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO2 has been widely used as a buffer layer in the top cells because it enables [...] Read more.
Recently, metal halide perovskite-based top cells have shown significant potential for use in inexpensive and high-performance tandem solar cells. In state-of-the-art p-i-n perovskite/Si tandem devices, atomic-layer-deposited SnO2 has been widely used as a buffer layer in the top cells because it enables conformal, pinhole-free, and highly transparent buffer layer formation. In this work, the effects of various electrical properties of SnO2 and C60 layers on the carrier transport characteristics and the performance of the final devices were investigated using a numerical simulation method, which was established based on real experimental data to increase the validity of the model. It was found that the band alignment at the SnO2/C60 interface does, indeed, have a significant impact on the electron transport. In addition, as a general design rule, it was suggested that at first, the conduction band offset (CBO) between C60 and SnO2 should be chosen so as not to be too negative. However, even in a case in which this CBO condition is not met, we would still have the means to improve the electron transport characteristics by increasing the doping density of at least one of the two layers of C60 and/or SnO2, which would enhance the built-in potential across the perovskite layer and the electron extraction at the C60/SnO2 interface. Full article
(This article belongs to the Special Issue Advances in Semiconductor Materials for Perovskite Solar Cells)
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Review

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20 pages, 5050 KiB  
Review
Recent Progress of Wide Bandgap Perovskites towards Two-Terminal Perovskite/Silicon Tandem Solar Cells
by Qianyu Chen, Long Zhou, Jiaojiao Zhang, Dazheng Chen, Weidong Zhu, He Xi, Jincheng Zhang, Chunfu Zhang and Yue Hao
Nanomaterials 2024, 14(2), 202; https://doi.org/10.3390/nano14020202 - 16 Jan 2024
Cited by 9 | Viewed by 6458
Abstract
Perovskite/silicon tandem solar cells have garnered considerable interest due to their potential to surpass the Shockley–Queisser limit of single-junction Si solar cells. The rapidly advanced efficiencies of perovskite/silicon tandem solar cells benefit from the significant improvements in perovskite technology. Beginning with the evolution [...] Read more.
Perovskite/silicon tandem solar cells have garnered considerable interest due to their potential to surpass the Shockley–Queisser limit of single-junction Si solar cells. The rapidly advanced efficiencies of perovskite/silicon tandem solar cells benefit from the significant improvements in perovskite technology. Beginning with the evolution of wide bandgap perovskite cells towards two-terminal (2T) perovskite/silicon tandem solar cells, this work concentrates on component engineering, additives, and interface modification of wide bandgap perovskite cells. Furthermore, the advancements in 2T perovskite/silicon tandem solar cells are presented, and the influence of the central interconnect layer and the Si cell on the progression of the tandem solar cells is emphasized. Finally, we discuss the challenges and obstacles associated with 2T perovskite/silicon tandem solar cells, conducting a thorough analysis and providing a prospect for their future. Full article
(This article belongs to the Special Issue Advances in Semiconductor Materials for Perovskite Solar Cells)
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